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Optoelectronics with Carbon Nanotubes

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mechanisms are the same for different operating modes, other than the small field that exists<br />

between the top gates in the diode mode.<br />

Figure V-11. Total electroluminescence intensity as a function of current, i.e., injected<br />

carriers. The intensity is extracted as the area of the Gaussian fit (see Figure V-10,<br />

inset). The graph shows that the emission originates from carrier recombination that<br />

requires a higher total current in the unipolar mode (black triangles) in which the<br />

number of minority carriers per unit current is small. Emission per current is<br />

comparable for split-gate and zero-gate modes because the ratio of majority to minority<br />

carriers is similar. See Figure V-10 captions for procedural details of fitting Gaussian<br />

function.<br />

Finally, we investigate the polarization dependence of the electroluminescence emission<br />

of the CNT film diode. Based on SEM (see Figure V-1 (a)) and Raman imaging, individual<br />

CNTs (mostly in bundles) forming the film have been measured to lie almost parallel, <strong>with</strong>in a<br />

range of 5° <strong>with</strong> respect to one another 99 . Since single CNTs are known to emit light that is<br />

strongly polarized in the direction of their long axes, we expect that the high degree of CNT<br />

alignment in the film translates into a pronounced light polarization effect. We inserted a linear<br />

polarizer in the optical path (Figure II-3) and measured the transmitted intensity as a function of<br />

the angle between the tube direction and the polarizer. We should point out that this measures<br />

the polarization property of the light itself, not the intensity as a function of the collection angle<br />

<strong>with</strong> respect to the device position and orientation, as in the dipole radiation. Based on the<br />

104

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