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Optoelectronics with Carbon Nanotubes

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In the previous study which examined global bottom-gated transistor behavior from the<br />

identical raw material 99 , EL and PL intensity maximum of another device was found at 0.64 eV.<br />

Referring to the empirical Kataura plot by Weisman et al. 15 , we see that different chiralities for<br />

the same diameter could easily differ in emission energy by about 100 meV in this diameter<br />

range. If only a limited number of tubes are involved in emission, as discussed above, statistical<br />

averaging between samples is limited; the difference of 40 meV in peak positions between<br />

devices is entirely possible. Since we do not have enough spatial resolution to identify the tubes<br />

participating in emission (let alone determine diameters and chiralities of those tubes), it is not<br />

possible to make any meaningful conclusions based on the comparison between the two unipolar<br />

emission peaks, other than suggesting that that number of tubes involved in conduction and<br />

emission may be small.<br />

On the other hand, the ambipolar and unipolar emissions in our data are from the same<br />

device and from the same measurement session, which makes them more directly comparable.<br />

Figure V-9 (c) compares normalized intensities of the two modes. In addition to the small<br />

difference in the maximum intensity energies, we see that in forward bias, there is a greater<br />

spectral weight of higher-energy emission. This was not observed in reverse bias, even when the<br />

intensity was comparable (when the intensity is increased, the broadening obscures the<br />

difference somewhat, but there is no feature around 0.65 eV). This would not be the signal from<br />

exciton-optical phonon coupling, since the optical phonon energy is about 180 meV, much larger<br />

than the signal-main peak separation observed. The difference in energy suggests the separation<br />

between the defect-bound and the “free exciton” states in single-tube CNT diodes. While it may<br />

seem unlikely that one observes spectral features in electroluminescence signal from such an<br />

ensemble of CNTs <strong>with</strong> a range of diameter and various chiralities which undoubtedly lead to a<br />

wide range of E11 transition energies 15 . However, existing literature on tube-tube energy<br />

transfer suggests that the long channel length ensures that lower energy states dominate, since<br />

energy relaxation to tubes <strong>with</strong> lower-energy E11 states happens very fast, <strong>with</strong>in 3 ps. In that<br />

case, it is reasonable that the defect-bound states and free-exciton states can show up as two<br />

peaks at least to some extent.<br />

We have seen during single-tube LED measurements that the lower-energy, defect-bound<br />

state sometimes appears after the tube has been stressed <strong>with</strong> higher levels of current. The films<br />

devices have already gone through higher-current measurements and “recycling” from previous<br />

99

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