BARBIER, Remi (University of Lyon 1 - IPNL) - NDIP 11 - IN2P3
BARBIER, Remi (University of Lyon 1 - IPNL) - NDIP 11 - IN2P3
BARBIER, Remi (University of Lyon 1 - IPNL) - NDIP 11 - IN2P3
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Part II: Solid State Devices - Features<br />
• Gain<br />
– Q pixel = ∆V. C pixel ∆V =V 0 -V bd « overvoltage»<br />
• C pixel ~50 fF / ΔV~ 6 V (~ 10% <strong>of</strong> V 0) and Q pixel~300 fC = 2*10 6 e -<br />
G ~ 2.10 6 @ ΔV~ 6 V<br />
• Photon Detection Efficiency<br />
– PDE = QE .FF .GE<br />
– GE = Geiger efficiency<br />
– FF = Geometrical efficiency<br />
PDE ~ 20%<br />
S. Korpar NIMA 639 (20<strong>11</strong>) 88<br />
Rémi Barbier, <strong>NDIP</strong> 20<strong>11</strong>, <strong>Lyon</strong>, France, July 4-8 tutorial : photodetectors<br />
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