BARBIER, Remi (University of Lyon 1 - IPNL) - NDIP 11 - IN2P3

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Part II: Photodetectors – HPD - principle € Gain: Energy dissipation through ionization and phonons e-h To generate 1 e-h pair in Si: W si =3.6 eV Gain V d is the threshold voltage (entrance dead layer !!!!) ΔV = 2 to 20 kV depends on • dead layer thickness M = e × (ΔV −V d ) W Si • readout noise • electron charge collection efficiency • DC required • cathode gap length Single-photon sensitive device Time resolution depends on: • Charge collection • Readout sequence of the chip Back Scattering • Number of channels to readout 64 to 10 6 Rémi Barbier, NDIP 2011, Lyon, France, July 4-8 tutorial : photodetectors pe 38
Part II: Hybrid devices - ebCCD Megapixel ebCCD single photon sensitive L. Benussi et al. NIMA 442 (2000) 154 Novel large aperture ebCCD (Hamamatsu) A. Suzuki et al. NIMA 628 (2011) 260 Rémi Barbier, NDIP 2011, Lyon, France, July 4-8 tutorial : photodetectors 39
Page 1 and 2: Rémi Barbier, NDIP 2011, Lyon, Fra
Page 3 and 4: Outlines Part I: The key parameter
Page 6 and 7: Introduction: The steps of the Phot
Page 8 and 9: € Part I: key parameters - photon
Page 10 and 11: € Part I: key parameters - Energy
Page 12 and 13: € Part I: key parameters - energy
Page 14 and 15: € Part I: T. Hollenhorst, A theor
Page 16 and 17: Key parameter: spatial resolution o
Page 18 and 19: Part I: key parameters K. Arisaka S
Page 20 and 21: the photon pathways γ Vacuum devic
Page 22 and 23: Vacuum devices Photomultiplier Tub
Page 24 and 25: Part II: PMT - Basic 1. The photon
Page 26 and 27: € Part II - PMT - Gain The Gain
Page 28 and 29: Part II: PMT - Photocathodes Diffe
Page 30 and 31: Part I - PMT - Photocathode improve
Page 32 and 33: Part II: MCP-PMT Multichannel plate
Page 34 and 35: Part II: MCP- Principle and perform
Page 36 and 37: Hybrid Photon Detector Imaging with
Page 40 and 41: Part II: HPD - EBCMOS Intevac Nigh
Page 42 and 43: Part II: Hybrid Device - HAPD Low D
Page 44 and 45: Solid State Devices APD in CMS Sing
Page 46 and 47: Part II: Solid State Devices - Aval
Page 48 and 49: Part II: Solid State Devices - from
Page 50 and 51: € Part II: Solid State Device - S
Page 52 and 53: Part II: Solid State Detector - SiP
Page 54 and 55: Part II: Solid State Devices - SiPM
Page 56 and 57: Part II: Solid State Detector - EMC
Page 58 and 59: Part II: Solide State devices - bac
Page 60 and 61: Part II: Solide State Devices - sCM
Page 62 and 63: Thank you for your attention Rémi
Page 64 and 65: Part II: PMT - photocathode noise
Page 66 and 67: Part II: PMT - The Pros and Cons P
Page 68 and 69: Part II : Solid State Detector sCMO
Page 70 and 71: A new camera system : what for ? F
Page 72 and 73: Rémi Barbier, NDIP 2011, Lyon, Fra
Page 74 and 75: Pixels Pixels Zoom in a raw frame F
Page 76 and 77: Neutral density filters Triggered L
Page 78 and 79: Pixels Multi target tracking : 684
Page 80 and 81: Mean signal [ph] Rémi Barbier, NDI
Page 82 and 83: Part II: Hybrid Devices - ebCMOS L
Page 84 and 85: Part II: Solid State Devices - Feat
Page 86: Preamble The performances of a pho

BARBIER, Remi (University of Lyon 1 - IPNL) - NDIP 11 - IN2P3

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