Matias URDAMPILLETA - TEL

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tel-00770488, version 1 - 7 Jan 2013 Int. J. Mol. Sci. 2011, 12 6662 Figure 2(b) shows the standard Coulomb diamond expected for a CNT QD with a charging energy around 20 meV. Figures 2(c,d) display a zoom on the degeneracy points without and under magnetic field (1 T). At low bias (
tel-00770488, version 1 - 7 Jan 2013 Int. J. Mol. Sci. 2011, 12 6663 Another remarkable feature of our device is its anisotropic response: we observed that the field values at which sharp conductance jumps are measured, called switching fields, depend strongly on the direction of the applied field. From a certain angle, our magnetic field is not strong enough to observe switching, and the hysteresis disappears (Figure 3(b)). In this case, the differential conductance does not depend on the field history; dI/dV is minimum for negative magnetic field and maximum for positive magnetic field, demonstrating that the switching near zero-field occurs independently from the one taking place at larger field. Thereby, we have to consider several independent magnetic objects to explain the data. In order to go one step further, we have plotted on Figure 3(c) the hysteresis amplitude (difference between trace and retrace) as a function of the applied field direction. It turns out that the switching field occurring at high value (the dashed line on Figure 3(c)) describes a straight line in the field space. The projection of those points along one axis stays constant, which is the fingerprint of the Ising like uniaxial anisotropy of the TbPc2-SMM family. Figure 4(a) shows the dependence of the hysteresis on the bias voltage applied to the quantum dot. This bias dependence shows that the hysteresis persists until 1 mV, but above this value, any residual hysteresis is smaller than the noise level. Furthermore, this measurement provides additional information: the switching field evolves with the bias voltage. We conclude from this observation that the conduction electrons can excite the molecules for larger bias voltages. Indeed, the energy of the conduction electrons increases with the bias voltage. A part of this energy might be transferred to the molecule via the electron density on the Pc-ligands and therefore to the anisotropic Tb spin system. As the temperature increases, the amplitude of the magnetoresistance decreases (Figure 4(b)). Indeed the spin-phonon interaction increases with the temperature and affect the spin-coherence. The magnetoresistance feature is lost around 1 K, which is below the TbPc2-SMMs blocking temperature but is in agreement with an exchange interaction of a few hundreds of µV. The blocking temperature can be roughly estimated to be around 1.5 K, in agreement with recent XMCD measurements of TbPc2-SMMs monolayers [18]. Figure 4. Bias and temperature dependences of the conductance hysteresis loops: (a) Color scale map of the dI/dV hysteresis as a function of in-plane magnetic field and source drain voltage Vds. The magnetic hysteresis are suppressed above Vds = ± 1 mV; (b) 15 records of conductance hysteresis loops for several temperatures ranging from 0.04 to 1 K at a constant sweep rate of 50 mT/s. The curves for T > 40 mK are offset by a multiple of 200 nS for clarity.
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Matias URDAMPILLETA - TEL

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