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V - Positron Annihilation in Halle

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ation (cm -3 Vacanccy<br />

concentra )<br />

10 17<br />

GaAs: Anneal<strong>in</strong>g under def<strong>in</strong>ed As pressure<br />

Si Ga-V Ga<br />

GaAs:Si<br />

L<strong>in</strong>ear fit<br />

001 0,01 01 0,1 1 10<br />

Arsenic pressure (bar)<br />

Thermodynamic reaction:<br />

1/4 As gas<br />

4 ↔ AsAs As As + V Ga<br />

Mass action law:<br />

[V [VG ] = KVG × p 1/4<br />

Ga] KVG × pAAs Mart<strong>in</strong>-Luther-Universität <strong>Halle</strong><br />

tration (cm )<br />

-3 Vacanncy<br />

concent )<br />

10 18<br />

10 17<br />

10<br />

10 16<br />

-3<br />

[T [Te] ] <strong>in</strong> i cm -3<br />

6x10 18<br />

2x10 18<br />

17<br />

4x10 17<br />

9x10 16<br />

GaAs:Te<br />

Te As-V Ga<br />

0,1 1 10<br />

Arsenic pressure (bar)<br />

Fit: [V Ga-Dopant] ~ p As n<br />

→ n = 1/4<br />

250<br />

245<br />

240<br />

235<br />

231<br />

K (ps)<br />

τ at 550 K<br />

av<br />

J. Gebauer et al.,<br />

Physica y B 273-274, 705 (1999) ( )

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