V - Positron Annihilation in Halle
V - Positron Annihilation in Halle
V - Positron Annihilation in Halle
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ation (cm -3 Vacanccy<br />
concentra )<br />
10 17<br />
GaAs: Anneal<strong>in</strong>g under def<strong>in</strong>ed As pressure<br />
Si Ga-V Ga<br />
GaAs:Si<br />
L<strong>in</strong>ear fit<br />
001 0,01 01 0,1 1 10<br />
Arsenic pressure (bar)<br />
Thermodynamic reaction:<br />
1/4 As gas<br />
4 ↔ AsAs As As + V Ga<br />
Mass action law:<br />
[V [VG ] = KVG × p 1/4<br />
Ga] KVG × pAAs Mart<strong>in</strong>-Luther-Universität <strong>Halle</strong><br />
tration (cm )<br />
-3 Vacanncy<br />
concent )<br />
10 18<br />
10 17<br />
10<br />
10 16<br />
-3<br />
[T [Te] ] <strong>in</strong> i cm -3<br />
6x10 18<br />
2x10 18<br />
17<br />
4x10 17<br />
9x10 16<br />
GaAs:Te<br />
Te As-V Ga<br />
0,1 1 10<br />
Arsenic pressure (bar)<br />
Fit: [V Ga-Dopant] ~ p As n<br />
→ n = 1/4<br />
250<br />
245<br />
240<br />
235<br />
231<br />
K (ps)<br />
τ at 550 K<br />
av<br />
J. Gebauer et al.,<br />
Physica y B 273-274, 705 (1999) ( )