V - Positron Annihilation in Halle

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Electron irradiation of Si • low-temperature electron irradiation was performed at 4K (Ee-=2 MeV) • annealing stage of monovacancies at about 170 K • moving V Si partly form divacancies • divacancies anneal at about 550…650 K Martin-Luther-Universität Halle PPolity lit et t al., l Ph Phys. RRev. B 58 (1998) 10363
GaAs: annealing under defined As As-partial partial pressure • two-zone-furnace: Control of sample temperature and As partial pressure allows to navigate freely in phase diagram (existence area of compound) • Measurements near equilibrium after quenching of samples T Tsample: l : 1100 1100° C T d t i A H W l t l J C t G th 109 191 (1991) As: determines Aspartial pressure Martin-Luther-Universität Halle H. Wenzl et al., J. Cryst. Growth 109, 191 (1991).
Page 1 and 2: Defect Characterization in Crystall
Page 3 and 4: • Vacancy concentration in therma
Page 5: Defects in electron-irradiated elec
Page 9 and 10: Comparison of doped and undoped GaA
Page 11 and 12: Theoretical Calculation of Vacancy
Page 13 and 14: Defects after high energy Si self s
Page 15 and 16: First defect-depth defect depth pro
Page 17 and 18: Determination of Defect Type 280
Page 19 and 20: Coincidence Coincidence-Doppler Dop

V - Positron Annihilation in Halle

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