V - Positron Annihilation in Halle
V - Positron Annihilation in Halle
V - Positron Annihilation in Halle
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Conclusions<br />
• <strong>Positron</strong>s are a useful tool<br />
• For characterization of vacancy-type defects <strong>in</strong> crystall<strong>in</strong>e solids<br />
• Unique for mono-vacancies<br />
• V Very sensitive iti for f vacancy clusters l t for f n < 10 (below (b l TEM sensitivity) iti it )<br />
• Sensitivity limit for monovacancies ≈ 10 15 /ccm<br />
R. Krause-Rehberg, H.S. Leipner<br />
„<strong>Positron</strong> <strong>Annihilation</strong> <strong>in</strong> Semiconductors“<br />
Spr<strong>in</strong>ger Spr<strong>in</strong>ger-Verlag, Verlag 1999
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