V - Positron Annihilation in Halle
V - Positron Annihilation in Halle V - Positron Annihilation in Halle
Height H [nm] ] 02 0.2 0.1 0.0 Identification of V VGa Ga-Si SiGa Ga-Complexes Complexes in GaAs:Si occupied empty states -2.0 V +1.4 V 1 2 3 4 5 6 7 8 9 1 2 3 4 5 6 7 8 9 lattice spacing in [110] direction • Scanning tunneling microscopy at GaAs (110)- cleavages l planes l (by (b Ph Ph. Ebert, Eb t Jülich) Jüli h) • Defect complex identified as VGa-SiGa Martin-Luther-Universität Halle cm -3 Defect conceentration (c ) 10 19 10 19 10 18 10 17 10 18 Positrons - c vac STM - [Si Ga -V Ga ] 10 19 Si concentration (cm -3 ) • Quantification → Agreement Mono-Vacancies in GaAs:Si are V Ga- Si Ga-complexes Gebauer et al., Phys. Rev. Lett. 78 (1997) 3334
Defects after high energy Si self self-implantation implantation -the the Rp/2 Effect on (cm -3 Cu conncentratio ) • After high-energy self-implantation of Si (3.5 MeV; 5 ×10 2 15 cm -2 ) and RTA (900°C, 30s): two new getter zones appear at Rp and Rp /2 (Rp = projected range of Si + ) • Zones become visible after Cu in-diffusion from rear side of sample (Cu implantation and diffusion annealing at 600°C) 10 17 10 16 TEM image by P. Werner, MPI Halle SIMS 10 0 1 2 3 4 15 Martin-Luther-Universität Halle R p/2 DDepth th( (μm) ) R p • at Rp : gettering by interstitial type dislocation loops • Formed due to interstial excess Si after iimplantation l t ti and dRTA RTA annealing li • Although gettering appears, no defects visible by TEM at Rp /2 • What is the nature of these defects?
- Page 1 and 2: Defect Characterization in Crystall
- Page 3 and 4: • Vacancy concentration in therma
- Page 5 and 6: Defects in electron-irradiated elec
- Page 7 and 8: GaAs: annealing under defined As As
- Page 9 and 10: Comparison of doped and undoped GaA
- Page 11: Theoretical Calculation of Vacancy
- Page 15 and 16: First defect-depth defect depth pro
- Page 17 and 18: Determination of Defect Type 280
- Page 19 and 20: Coincidence Coincidence-Doppler Dop
Height H [nm] ]<br />
02 0.2<br />
0.1<br />
0.0<br />
Identification of V VGa Ga-Si SiGa Ga-Complexes Complexes <strong>in</strong> GaAs:Si<br />
occupied empty states<br />
-2.0 V +1.4 V<br />
1 2 3 4 5 6 7 8 9 1 2 3 4 5 6 7 8 9<br />
lattice spac<strong>in</strong>g <strong>in</strong> [110] direction<br />
• Scann<strong>in</strong>g tunnel<strong>in</strong>g microscopy at GaAs (110)-<br />
cleavages l planes l (by (b Ph Ph. Ebert, Eb t Jülich) Jüli h)<br />
• Defect complex identified as VGa-SiGa Mart<strong>in</strong>-Luther-Universität <strong>Halle</strong><br />
cm -3 Defect<br />
conceentration<br />
(c )<br />
10 19<br />
10 19<br />
10 18<br />
10 17<br />
10 18<br />
<strong>Positron</strong>s - c vac<br />
STM - [Si Ga -V Ga ]<br />
10 19<br />
Si concentration (cm -3 )<br />
• Quantification → Agreement<br />
Mono-Vacancies <strong>in</strong> GaAs:Si are V Ga- Si Ga-complexes<br />
Gebauer et al., Phys. Rev. Lett. 78 (1997) 3334
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