V - Positron Annihilation in Halle
V - Positron Annihilation in Halle
V - Positron Annihilation in Halle
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Vacancy clusters <strong>in</strong> semiconductors<br />
• vacancy clusters were observed after ion/neutron irradiation, ion<br />
implantation and plastic deformation<br />
• due to lar large e open volume (low electron density) -> > positron lifetime<br />
<strong>in</strong>creases dist<strong>in</strong>ctly<br />
• example: plastically deformed Ge<br />
• lifetime: τ = 525 ps<br />
• reason for void formation: jog<br />
dragg<strong>in</strong>g mechanism<br />
• trapp<strong>in</strong>g rate of voids disappears<br />
dur<strong>in</strong>g anneal<strong>in</strong>g experiment<br />
Mart<strong>in</strong>-Luther-Universität <strong>Halle</strong><br />
Krause-Rehberg et al., 1993
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