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Experiments with Supersonic Beams as a Source of Cold Atoms

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Figure 5.11: Photograph <strong>of</strong> the hydrogen trap coil driving circuit. The byp<strong>as</strong>s circuit<br />

is the top layer, <strong>with</strong> the two H-bridges in series in copper on the bottom layer.<br />

Varistor banks are placed across each MOSFET bank to absorb any voltage spikes.<br />

bank <strong>of</strong> eight individual MOSFETs (IXYS IXFX230N20T) connected in parallel (a<br />

MOSFET bank). The H-bridges are wired in series, ensuring that the current is the<br />

same in both coils. Each H-bridge also h<strong>as</strong> a byp<strong>as</strong>s circuit, which is switched by a<br />

separate MOSFET bank. This allows one coil to be switched <strong>of</strong>f <strong>with</strong>out turning <strong>of</strong>f<br />

the current to the other coil. The current in the coils is supplied by a 30 V 500 A<br />

programmable power supply (Lambda ESS 30-500) <strong>with</strong> excellent current stability<br />

(0.1% regulation). The current control for the circuit is provided by the power sup-<br />

ply itself rather than by a seperate current control feedback loop. Schottky diodes<br />

(Microsemi APT2X101S20J) are used between the byp<strong>as</strong>s circuits and the coils to<br />

keep the body diode <strong>of</strong> the MOSFET from operating <strong>as</strong> a freewheel for the trapping<br />

coils and incre<strong>as</strong>ing the switching time. The circuit is designed to limit stray induc-<br />

tances by keeping gaps between current paths <strong>as</strong> small <strong>as</strong> possible. Varistor banks<br />

are placed across each MOSFET bank. Combined these me<strong>as</strong>ures limit the voltage<br />

spikes in the circuit.<br />

The re<strong>as</strong>on that MOSFET banks are used in the trap switching circuit, instead<br />

132

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