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JAEA-Evaluation-2010-005-CD.pdf:6.17MB - 日本原子力研究開発機構

JAEA-Evaluation-2010-005-CD.pdf:6.17MB - 日本原子力研究開発機構

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研究グループ:陽電子ビーム物性研究グループ<br />

査読付き専門誌(題名、著者名、雑誌、巻、ページ、年)<br />

平成 17 年度下期<br />

(1)Structure of SiO2/4H-SiC interface probed by positron annihilation spectroscopy,<br />

M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Miyashita, R. Suzuki, and T. Ohdaira,<br />

Phys. Rev. B 73, 14111_1-9(2006).<br />

(2)Energy variable slow positron beam study of Li+ implantation induced defects in ZnO,<br />

Z. Q. Chen, M. Maekawa and A. Kawasuso,<br />

Chi. Phys. Lett. 23, 675-677 (2006).<br />

平成 18 年度<br />

(3)Positron study of vacancy defects in SiC,<br />

A. Kawasuso, M Yoshikawa, H. Itoh, Krause-Rehberg, F. Redmann, T. Chiba, T. Higuchi<br />

and K. Betsuyaku,<br />

Physica B: Condensed Matter. 376-377, 354-357 (2006).<br />

(4)Defect layer in SiO2/SiC iInterface probed by a slow positron beam,<br />

M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Miyashita, R. Suzuki and T. Ohdaira,<br />

Physica B: Condensed Matter. 376-377, 350-353 (2006).<br />

(5)Defects in electron irradiated ZnO studied by positron annihilation,<br />

Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, H. Naramoto,<br />

Physica B: Condensed Matter. 376-377, 722-725 (2006).<br />

(6)Phase transition and structure of Ge(111)-√ 3×√3-Sn surface studied by reflection<br />

high-energy positron diffraction,<br />

Y. Fukaya, A. Kawasuso and A. Ichimiya,<br />

e-J. Surf. Sci. Nanotech. 4, 435-438 (2006).<br />

(7)Adsorption of oxygen on Si(001) surfaces studied by reflection high-energy positron<br />

diffraction,<br />

K. Hayashi, A. Kawasuso and A. Ichimiya,<br />

e-J. Surf. Sci. Nanotech. 4, 510-513 (2006).<br />

(9)Structural analysis of Si(111)-√21×√21-Ag surface by reflection high-energy positron<br />

diffraction,<br />

Y. Fukaya, A. Kawasuso and A. Ichimiya,<br />

Surf. Sci. 600, 3141-3146 (2006).<br />

(10)Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion<br />

species,<br />

Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto,<br />

J. Appl. Phys. 99, 93507_1-5 (2006).<br />

(11)Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam,<br />

Z. Q. Chen, A. Kawasuso, Acta Phys. Sin. 55, 4353-4356 (2006).<br />

(12)Structural analysis of Ge(111)-3×3-Sn surface at low-temperature by reflection<br />

high-energy positron diffraction,<br />

Y. Fukaya, A. Kawasuso and A. Ichimiya,<br />

Surf. Sci. 600, 4086-4088 (2006).<br />

(13)Reflection high-energy- positron diffraction pattern from a Si(111)-7×7 surface,<br />

K. Hayashi, A. Kawasuso and A. Ichimiya,<br />

Surf. Sci. 600, 4426-4429 (2006).<br />

(14)Microstructure dependence of deuterium retention and blistering in the near-surface<br />

region of tungsten exposed to high flux deuterium plasmas of tens of 38eV,

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