JAEA-Review-2010-065.pdf:15.99MB - 日本原子力研究開発機構
JAEA-Review-2010-065.pdf:15.99MB - 日本原子力研究開発機構
JAEA-Review-2010-065.pdf:15.99MB - 日本原子力研究開発機構
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1-09<br />
Evaluation of Single Event Effects on Commercial-off-<br />
the-Shelf Semiconductors for Space Flight Applications<br />
I. Kato a) , S. Matsuda a) , S. Baba b) , T. Hirose b) , J. Ohya b) , H. Okamoto b) , H. Katayama c) ,<br />
M. Naitoh c) , M. Harada c) , M. Suganuma c) and Y. Tange c)<br />
a) Space System Department, Kamakura Works, Mitsubishi Electric Corporation,<br />
b) Quality Assurance Division, Ryoei Technica Corporation,<br />
c) Earth Observation Research Center, Japan Aerospace Exploration Agency<br />
Nowadays, there are increasing interests in applying the<br />
commercial-off-the-shelf (COTS) devices widely used in the<br />
ground-based systems to space satellites, which may reduce<br />
the size and cost of satellite systems as well as shorten the<br />
time for development. However, one has to intensively<br />
evaluate potential risks of using them in the space radiation<br />
environment before they are put on board for actual flights.<br />
We are developing a compact infra-red camera (CIRC)<br />
for the earth observation from the space, in which we utilize<br />
the design of an already developed one for the ground use<br />
with some appropriate modifications. Its preliminary<br />
design was known to contain 9 COTS semiconductor<br />
devices whose sensitivity to the single event effects (SEEs)<br />
was unknown. Hence, we performed heavy-ion irradiation<br />
test on them to evaluate it. Among variations of SEEs, we<br />
have concentrated in this test on such effects that could<br />
cause fatal failure resulting in potential permanent loss of<br />
system functions, such as Single Event Latch-up (SEL).<br />
The test was conducted at TIARA in TARRI, <strong>JAEA</strong>.<br />
Nine COTS devices tested were as listed in Table 1; a<br />
driver/receiver, a gate inverter (Gate Inv.), a reset IC, a<br />
thermoelectric cooler (TEC) driver, a multiplexer (MUX), a<br />
synchronous static random access memory (SSRAM), a<br />
flash memory (Flash), an analog-to-digital converter (ADC)<br />
and a digital-to-analog converter (DAC). The devices<br />
under test (DUT) were set in JAXA’s irradiation chamber<br />
installed in the HD2 course in TIARA facility and a cocktail<br />
ion beam with M/Q = 5 was irradiated on them. Every<br />
DUT was powered during the irradiation and the supply<br />
current was monitored to detect possible SEL event. The<br />
device temperature was nominally kept at 80 °C during the<br />
irradiation, while it was at 40-65 °C in some cases. For<br />
each device, 3 samples were exposed to 129 Xe 23+ beam with<br />
a linear energy transfer (LET) value of 69.2 MeV-cm 2 /mg.<br />
Irradiation was continued until the total fluence reached<br />
1 × 10 5 ions/cm 2 , or otherwise until enough number of<br />
detected SEL events was accumulated when happened.<br />
After irradiation, samples were tested for its functionality.<br />
When SEL event was detected during the irradiation and/or<br />
a sample was found to be functionally broken at the<br />
post-irradiation test about a certain device, additional<br />
irradiations were performed on that device using other<br />
species of ions, where we used either 84 Kr 17+ (LET =<br />
39.9 MeV-cm 2 /mg), 40 Ar 8+ (LET = 15.3 MeV-cm 2 /mg), or<br />
20 Ne 4+ (LET = 6.3 MeV-cm 2 /mg) ions depending on what<br />
kind of SEE was observed.<br />
<strong>JAEA</strong>-<strong>Review</strong> <strong>2010</strong>-065<br />
- 13 -<br />
Among 9 devices tested, the driver/receiver, the Gate inv.,<br />
the MUX, the TEC driver and the reset IC showed no<br />
evidence of SEL event happening during 129 Xe 23+ beam<br />
irradiation. They also passed the functional testing after<br />
the irradiation. The results mean the SEL cross-section for<br />
them is below 1 × 10 -5 cm 2 at LET = 69.2 MeV-cm 2 /mg.<br />
Some SEL signals were detected during 129 Xe 23+ irradiation<br />
on the other 4 devices. They, except for the DAC, were<br />
found to be functioning in the post-irradiation testing,<br />
indicating that they are recoverable by a power cycle even if<br />
SEL happens. The DAC was found not to be functional.<br />
Additional irradiation was conducted with 40 Ar 8+ ion on<br />
4 devices which had shown the SEL sensitivity above.<br />
Neither the SSRAM nor Flash shows any evidence of SEL,<br />
indicating that their SEL threshold lies between 15.3 and<br />
69.2 MeV-cm 2 /mg. They also passed functional tests after<br />
irradiation. The ADC and DAC showed some SEL signals.<br />
The ADC was properly functioning after the irradiation,<br />
while the DAC was not. The ADC and DAC were further<br />
irradiated by other ion species. The ADC showed no SEL<br />
evidence during 20 Ne 4+ irradiation, indicating its SEL<br />
threshold lies between 6.3 and 15.3 MeV-cm 2 /mg. Its<br />
functionality is recoverable by a power cycle when SEL<br />
happens. Further DAC samples were devoted for 84 Kr 17+<br />
irradiation in order to evaluate consequent risks to a single<br />
SEL event. It was observed that a device temperature rose<br />
by about 10 °C from nominal after a single SEL occurred,<br />
which could be due to the increased current caused by the<br />
SEL. The DAC failed the post-irradiation testing, again.<br />
In summary, 4 out of 9 devices tested were found to be<br />
SEL-sensitive at some level, as shown in Table 1. Except<br />
for the DAC, they are recoverable from SEL events by a<br />
power cycle. The DAC was found to lose its functions<br />
after an SEL. We have evaluated possible risks of using<br />
them in the space based on the above results and properly<br />
reflected them to the CIRC’s design to avoid the risks.<br />
Table 1 Summary of SEE test results for 9 COTS devices.<br />
DUT SEL threshold Reflection to design<br />
Driver/Receiver<br />
Gate Inverter<br />
Reset IC<br />
TEC driver<br />
> 69.2<br />
[MeV-cm 2 /mg]<br />
Use as is<br />
(Function<br />
recoverable from<br />
SEL by power cycle)<br />
Multiplexer<br />
SSRAM<br />
Flash memory<br />
15.3 - 69.2<br />
ADC 6.3 - 15.3<br />
DAC < 15.3 To be replaced