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JAEA-Review-2010-065.pdf:15.99MB - 日本原子力研究開発機構

JAEA-Review-2010-065.pdf:15.99MB - 日本原子力研究開発機構

JAEA-Review-2010-065.pdf:15.99MB - 日本原子力研究開発機構

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4-19<br />

Radiation-Induced Electrical Degradation in CeO2<br />

Ceramics Irradiated with 10 MeV Ni<br />

N. Ishikawa and K. Takegahara<br />

Division of Fuels and Materials Engineering, NSED, <strong>JAEA</strong><br />

Radiation damage is one of the important causes of<br />

degradation of thermal conductivity and serious swelling in<br />

nuclear ceramic fuels. Understanding of radiation damage<br />

in nuclear fuel is important for controlling fuel properties<br />

during burn up. One of main objectives of this study is to<br />

elucidate the irradiation parameter dominating the radiation<br />

damage of ceramics by means of accelerator experiments,<br />

and to develop the characterization method of the radiation<br />

damages. Especially for simulating the process of<br />

radiation damage by elastic displacements, low-energy<br />

particle (10 MeV Ni) irradiation experiment has been<br />

performed. The oxide ceramics target, CeO 2, which has<br />

the same crystal structure (fluorite structure) with a UO 2<br />

nuclear fuel is adopted. In the present study, the radiation<br />

damage behavior is characterized not only by the X-ray<br />

diffraction method but also by the electrical conductivity<br />

measurement method.<br />

Thin films of CeO 2 were prepared on Al 2O 3 single<br />

crystal substrates, and were irradiated with 10 MeV Ni ions<br />

at room temperature. After the irradiation, fluence<br />

dependence of change of X-ray diffraction (XRD) pattern was<br />

measured in the wide fluence range up to 1.0 × 10 16 ions/cm 2 ,<br />

and also the electrical conductivity was measured up to about<br />

1 × 10 16 ions/cm 2 . The film thickness was fixed to be about<br />

0.3 μm which is thin enough to rule out the possibility of<br />

unwanted implantation effects.<br />

Figure 1 shows the change in electrical conductivity<br />

plotted against fluence. Prominent electrical degradation<br />

is observed in the fluence range from 10 12 to 10 14 ions/cm 2 ,<br />

and it saturates in the high fluence range above<br />

10 14 ions/cm 2 . This behavior can be understood, if the<br />

damage cross-section of around 7 × 10 -15 cm 2 and electrical<br />

conductivity of damaged region of around 3 × 10 -4 -1 m -1<br />

are assumed. This is demonstrated as a dotted curve in the<br />

figure.<br />

In Fig. 2, the intensity of X-ray diffraction peak ((002)<br />

peak intensity) is plotted as a function of fluence.<br />

A sudden decrease in peak intensity is observed in the<br />

fluence range of around 10 13 ions/cm 2 . The decrease in the<br />

intensity saturates in the high fluence range over about 10 13 -<br />

10 14 ions/cm 2 . This behavior can be understood, if the<br />

damage cross-section of around 1 × 10 -13 cm 2 is assumed.<br />

This is demonstrated as a dotted curve in the figure. The<br />

damage cross-section for electrical conductivity<br />

measurement is smaller than that for XRD measurement,<br />

indicating that the damaged area responsible for electrical<br />

degradation is smaller than that responsible for<br />

crystallographic degradation.<br />

<strong>JAEA</strong>-<strong>Review</strong> <strong>2010</strong>-065<br />

- 143 -<br />

Part of the present study is the result of “Research of<br />

highly accurate evaluation of radiation damage in advanced<br />

nuclear reactor fuel ceramics” entrusted to “Japan Atomic<br />

Energy Agency” by the Ministry of Education, Culture,<br />

Sports, Science and Technology of Japan (MEXT). Part of<br />

the present work was supported by KAKENHI (21360474).<br />

Electrical Conductivity, σ(Ω −1 m −1 )<br />

10 −3<br />

10 −4<br />

10 −5<br />

10 −6<br />

10 12<br />

10 14<br />

fluence(ions/cm 2 )<br />

10 16<br />

Fig. 1 Electrical conductivity of CeO2 thin films plotted<br />

against fluence of 10 MeV Ni ions. For a dotted<br />

curve, see text.<br />

Normalized Intensity, I/I o<br />

1.4<br />

1.2<br />

1<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

0<br />

10 12<br />

10 14<br />

Fluence (ions/cm 2 )<br />

10 16<br />

Fig. 2 Intensity of X-ray diffraction peak normalized by<br />

that of unirradiated CeO 2 thin films plotted against<br />

fluence of 10 MeV Ni ions. For a dotted curve, see<br />

text.

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