JAEA-Review-2010-065.pdf:15.99MB - 日本原子力研究開発機構

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4-14 The Effects of Displacement Damage and Transmutation Atoms on Microstructure of SiC: The Effects of H Atom on Dimensional Change of SiC T. Nozawa a) , T. Taguchi b) and H. Tanigawa a) a) Division of Fusion Energy Technology, FRDD, JAEA, b) Neutron Material Research Center, QuBS, JAEA A SiC/SiC composite is a candidate for fusion structural material due to the inherently good irradiation resistance of 1, 2) SiC itself . Specifically, a dense and robust nanoinfiltration transient-eutectic-phase sintered (NITE) SiC/SiC composite is believed to be viable due to potential high competitiveness. However, irradiation tolerance of NITE composites, which contain secondary phases composed of sintering aids, is somehow questionable considering the fact of irradiation-induced degradation for SiC with impurities 1) . In contrast, for the practical application, understanding the synergistic effects of He and H as transmutation products of a fusion reactor on microstructural evolution of SiC under irradiation is important. For instance, applying the triple ion beam irradiation by the TIARA facility, the significance of H on the He bubble formation was identified for pure 3) SiC . However, this effect on SiC with impurities is presently uncertain. This study primarily aims to identify the effects of displacement damage and transmutation atoms (He and H) on microstructure of SiC with sintering aids. A NITE-SiC ceramic as representative matrix phase of NITE-SiC/SiC composites was tested. The sintering aids were Al2O3 and Y2O3. Triple ion beam (Si 2+ , He + and H + ) irradiation was carried out up to 10 dpa at 1,000 ºC. A constant He/dpa ratio of 130 appm/dpa and varied H/dpa ratios of 0, 40 and 130 appm/dpa were applied. Figure 1 shows the calculated depth profiles of displacement damage and He, H and Si concentration. The radiation-induced dimensional change was then evaluated by the step-height measurement by the atomic force microscopy (Fig. 2). The 4) detail of this technique was descrived elesewhere . Figure 3 shows radiation-induced dimensional change as Fig. 1 Displacement damage, He, H and Si concentration as a function of depth from the surface in SiC calculated by SRIM code. JAEA-Review 2010-065 - 138 - Fig. 2 Example of the step-height swelling measurement by the atomic force microscopy. appmHe/dpa = 130 T irr. = 1000ºC Hydrogen Implantation Ratio [appmH/dpa] Fig. 3 The effect of H/dpa on dimensional change of SiC under triple ion beam (Si 2+ , He + and H + ) irradiation. a function of the H/dpa ratio. Considering data scatter, it is speculated that the effect of the H/dpa ratio on the radiation-induced dimensional change of NITE-SiC was neglegibly small. However, for ~10 dpa, the amount of implanted H was very little to form He bubbles, which impact the magnitude of radiation-induced dimensional change. Further evaluation is, therefore, required to conclude this. The detailed analysis of the synergestic effects on microstructure of NITE-SiC is being continued. References 1) L.L. Snead et al., J. Nucl. Mater. 371 (2007) 329. 2) T. Nozawa et al., J. Nucl. Mater. 386-388 (2009) 622. 3) T. Taguchi et al., J. Nucl. Mater. 367-370 (2007) 698. 4) Y. Katoh et al., Mater. Trans. 43 (2002) 612.
4-15 JAEA-Review 2010-065 Annealing Behavior of Vacancy-type Defects in Electron-irradiated SixGe1-x Bulk Crystals at Low Temperature Y. Nagai a) , K. Inoue a, b) , H. Takamizawa a) , T. Takeuchi a, c) , A. Kuramoto a) , T. Toyama a) , M. Hasegawa d) and I. Yonenaga d) a) The Oarai Center, IMR, Tohoku Univ., b) Kyoto Univ., c) JAEA, d) IMR, Tohoku Univ. Vacancy-type defects in an electron-irradiated Si-Ge alloy (Si 0.85Ge 0.15) were investigated by positron annihilation technique. The Czochralski-growth undoped Si-Ge single crystals 1) were irradiated at 77 K with 2 MeV electrons to a fluence of 2.5 × 10 17 e/cm 2 . The specimens were set to a sample chamber for positron experiments without temperature rise, and then positron lifetime and coincidence Doppler broadening (CDB) measurements were performed at 80 K. The positron trapping at monovacancies was observed for as-irradiated state. The isochronal annealing up to 250 K resulted in the increase of high momentum component fraction of CDB, which indicates that the fraction of positron annihilation with Ge electrons for the specimen annealed at 250 K was higher than that for the unirradiated specimen. On the other hand, positron lifetime showed slight decrease by the annealing. These results strongly suggest that the vacancies are stabilized by being surrounded with Ge atoms. SixGe 1-x(0
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JAEA-Review 2010-065 JAEA Takasaki
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JAEA-Review 2010-065 PREFACE This r
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JAEA-Review 2010-065 and pulsed hea
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JAEA-Review 2010-065 1-23 Studies o
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JAEA-Review 2010-065 3-24 Lethal Ef
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JAEA-Review 2010-065 4-07 Fabricati
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JAEA-Review 2010-065 5. Status of I
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JAEA-Review 2010-065 1-13 Alpha-rad
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1-01 Radiation Resistance of InGaP/
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1-03 Evaluation of Soft Error Rates
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1-05 Heavy-ion Induced Current in S
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Total Ionizing Dose Tolerance of Si
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1-09 Evaluation of Single Event Eff
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Hydrogen Diffusion in a-Si:H Thin F
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1-13 Alpha-radiolysis of Organic Ex
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Study on Stability of Cs·Sr Solven
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Irradiation Effect of Gamma-Rays on
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1-19 Development of Radiation Resis
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1-21 Alpha-Ray Irradiation Damage o
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1-23 Studies on Microstructure and
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1-25 Effect of Groundwater Radiolys
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1-27 Simulation of Neutron Damage M
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1-29 Irradiation Hardening in Ion-i
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1-31 Preparation of Anion-Exchange
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1-33 Radiation-Induced Graft Polyme
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JAEA-Review 2010-065 2. Environment
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2-02 Development of Zwitterionic Mo
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Modification of Hydroxypropyl Cellu
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The Recovery of Precious Metals Usi
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2-08 ESR Study on Carboxymethyl Chi
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JAEA-Review 2010-065 3. Biotechnolo
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JAEA-Review 2010-065 3-28 Electron
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JAEA-Review 2010-065 3-51 PET Studi
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3-02 Mutagenic effects of He ion pa
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3-04 Functional Analysis of Flavono
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3-06 Generation New Ornamental Plan
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3-08 Stability of Flower-colour Mut
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3-10 JAEA-Review 2010-065 Effects o
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3-12 Producing New Gene Resources i
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3-14 Production of Soybean Mutants
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Assessment of Irradiation Treatment
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3-18 Effect of Different LET Radiat
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3-20 JAEA-Review 2010-065 Fungicide
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3-22 JAEA-Review 2010-065 FACS-base
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3-24 Lethal Effects of Different LE
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3-26 JAEA-Review 2010-065 Ion Beam
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3-28 Electron Spin Relaxation Behav
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3-30 Target Irradiation of Individu
Page 104 and 105: 3-32 Carbon-ion Microbeam Induces B
Page 106 and 107: 3-34 Biological Effects of Carbon I
Page 108 and 109: 3-36 Difference in Bystander Lethal
Page 110 and 111: 3-38 Analysis of Lethal Effect Medi
Page 112 and 113: 3-40 Irradiation with Carbon Ion Be
Page 114 and 115: 3-42 Expression of Two Gelsolins in
Page 116 and 117: 3-44 Analysis of Bystander Cell Sig
Page 118 and 119: 3-46 Quantitative Evaluation of Ric
Page 120 and 121: 3-48 Visualization of 107 Cd Accumu
Page 122 and 123: 3-50 Uniformity Measurement of Newl
Page 124 and 125: 3-52 Imaging and Biodistribution of
Page 126 and 127: 3-54 Improvement of Spatial Resolut
Page 128 and 129: 3-56 The Optimum Conditions in the
Page 130 and 131: 3-58 Evaluation of Cisplatin Concen
Page 132 and 133: 3-60 JAEA-Review 2010-065 Analysis
Page 134 and 135: 3-62 JAEA-Review 2010-065 Sensitivi
Page 136 and 137: JAEA-Review 2010-065 4-14 The Effec
Page 138 and 139: JAEA-Review 2010-065 4-39 Relations
Page 141 and 142: 4-01 Hydrogen Gasochromism of WO3 F
Page 143 and 144: 4-03 Synthesis of Single-Crystallin
Page 145 and 146: 4-05 Synergy Effects in Electron/Io
Page 147 and 148: Fabrication of Diluted Magnetic Sem
Page 149 and 150: 4-09 Gas Permeation Characteristics
Page 151 and 152: 4-11 Control of Radial Size of Poly
Page 153: 4-13 Behavior of N Atoms in Nitridi
Page 157 and 158: Low Temperature Ion Channeling of F
Page 159 and 160: 4-19 Radiation-Induced Electrical D
Page 161 and 162: 4-21 Study on Cu Precipitation in E
Page 163 and 164: 4-23 Evaluation of Fluorescence Mat
Page 165 and 166: 4-25 Evaluation of the ZrC Layer fo
Page 167 and 168: 4-27 Structure Analysis of K/Si(111
Page 169 and 170: 4-29 LET Effect on the Radiation In
Page 171 and 172: 4-31 Stabilization of Measurement S
Page 173 and 174: Systematic Measurement of Neutron a
Page 175 and 176: 4-35 Measurement of Neutron Fluence
Page 177 and 178: 4-37 Evaluation of the Response Cha
Page 179 and 180: 4-39 Relationship between Internucl
Page 181 and 182: 4-41 Analysis of Radiation Damage a
Page 183 and 184: 4-43 Positive Secondary Ion Emissio
Page 185 and 186: 4-45 JAEA-Review 2010-065 Ion Induc
Page 187 and 188: 4-47 Fabrication of Dielectrophoret
Page 189 and 190: 4-49 Fast Single-Ion Hit System for
Page 191 and 192: 4-51 Development of Beam Generation
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Page 196 and 197: Operation of the AVF Cyclotron T. N
Page 198 and 199: Operation of Electron Accelerator a
Page 200 and 201: 5-06 FACILITY USE PROGRAM in Takasa
Page 202 and 203: 5-08 Radioactive Waste Management i
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Appendix 2 List of Related Patents
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Appendix 4 Type of Research Collabo
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表1.SI 基本単位基本量 SI
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