JAEA-Review-2010-065.pdf:15.99MB - 日本原子力研究開発機構

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4-06 Atomistic Study of Irradiation-induced Mass Transport Process Y. Ikoma a) , T. Motooka a) , H. Sakita a) , Hafizal Yahaya a) , H. Naramoto b) , K. Narumi b) , S. Sakai b) b, c) and Y. Maeda a) Department of Materials Science and Engineering, Kyushu University, b) Advanced Science Research Center, JAEA, c) Faculty of Engineering, Kyoto University A nanometer-sized pores (nanopores) is of great interest for a possible application to molecular sensors such as DNA sequencers 1) . These nanopores are fabricated using biomaterials and insulators. Especially, insulator nanopores are mainly fabricated by means of ion beam 2, 3) 4) sculpting or electron beam exposure . We have investigated the nanopore formations utilizing the structural change in Si and by ion irradiation 5, 6) and smart cut process by hydrogen ion implantation into nanopore-formed Silicon-on-Insulator (SOI) substrates 7) . In the case of the ion irradiation technique, SOI(100) substrates with the top Si layer of 180 nm. The initial m-size holes were prepared by ~30 keV Ga + focused ion beam irradiation using HITACHI FB-2000 at Kyushu University. Then the B + , Si + , P + , and Ar + ions with the energy of 10 keV were implanted into the hole region at room temperature with doses of 4.4 × 1016 /cm 2 , 4.3 × 10 16 /cm 2 , 0.9 × 1016 /cm 2 , and 1.5 × 1016 /cm 2 , respectively. These implantations were carried out by 400 kV ion implanter at TIARA. In order to avoid possible carbon contaminations on the sample surfaces, the irradiation chamber was kept cooled by surrounding cold shrouds. Figure 1 shows the transmission electron microscopy (TEM) photographs obtained from the SOI samples before and after P + ion irradiation. The structural changes induced by ion bombardments were analyzed based on the dark-field (DF) and bright-field (BF) images combined with the selected-area diffraction (SAD) patterns. The dark-field images indicate that the hole region is crystalline before ion irradiation, but the hole region is changed to amorphous after ion irradiation. The pore area before and after ion irradiations is changed from 4.73 m 2 to 4.56 m 2 , respectively. The shrinks of B + , Si + , P + , and Ar + ions per dose are 0.5 × 10-25 cm 4 , 1.8 × 10-25 cm 4 , 1.9 × 10-25 cm 4 , and 5.5 × 10-25 cm 4 , respectively. It is found that the shrinkage effects can be attributed to dilation of crystalline Si upon amorphization induced by ion beam bombardments. The observed difference in ion species may be due to the difference in the number of the ion-beam-induced Fig. 1 TEM photographs from the SOI sample with a hole before and after the irradiation with 10 keV P + ions. JAEA-Review 2010-065 - 130 - Frenkel-pairs, which is consistent with the D-D pair model for ion-beam-induced amorphization of Si proposed previously 8, 9) . We also investigated the smart cut process by hydrogen ion implantation into nanopore-formed SOI substrates. The nanopore samples were fabricated by a pulse jet CVD 10) technique described elsewhere . Separation by Implanted Oxygen (SIMOX) (100) with SOI and buried oxide (BOX) layers of 180 nm and 100 nm, respectively, were cleaned by the conventional RCA method 11) . These substrates were introduced into the chamber after being dipped in aqueous 5% buffered HF in order to remove surface oxides. Electronic grade CH 3SiH 3 was introduced into the growth chamber using a supersonic pulse valve with a nozzle diameter of 0.8 mm. The pulse width and frequency were set at 100 µs and 10 Hz, respectively. The substrate temperature was set at 850 °C. After forming the SiC heteroepitaxial layer and the {111} faceted pits on SOI layer, these samples were dipped into 5% buffered HF solution for 10 min in order to remove the BOX layer under the pits. Hydrogen ion implantation was performed at room temperature with 1.44 MeV H 2 + up to the dose of 1 × 10 17 H/cm 2 utilizing 3 MV single-ended accelerator at TIARA. In order to separate the nanopore-grown film from SIMOX substrates, we heated the as-implanted sample at ~500 °C in air. From the scanning electron microscopy observation, it was confirmed that the sample surface was successfully cut with the depth at 10m from the substrate surface. These results suggest that ion beam irradiation is promising not only for inducing the structural changes of solids but also for fabricating nanopore systems by the smart-cut technique. References 1) M. Rhee and M. A. Burns, Trends Biotechnol. 24 (2006) 580. 2) J. Li et al., Nature 412 (2001) 166. 3) J. Li et al., Nature Mater. 2 (2003) 611. 4) A. J. Storm et al., Nature Mater. 2 (2003) 537. 5) T. Motooka et al., JAEA Takasaki Ann. Rep. 2006 (2008) 169. 6) T. Motooka et al., JAEA Takasaki Ann. Rep. 2007 (2008) 140. 7) Y. Ikoma et al., Abst. 4th Takasaki adv. Radiat. Res. Symp. (2009) 170. 8) T. Motooka, Phys. Rev. B 49 (1994) 16367. 9) T. Motooka et al., Phys. Rev. Lett. 78 (1997) 2980. 10) Y. Ikoma et al., Proc. SPIE 6984 (2008) 69841V. 11) W. Kern and D. A. Puotinen, RCA Rev. 31 (1970) 187.
Fabrication of Diluted Magnetic Semiconductor Crystals by Ion-Implantation Technique A. Yabuuchi a) , M. Maekawa a) , A. Kawasuso a) , S. Entani a) , Y. Matsumoto a) , S. Sakai a) and S. Yamamoto b) a) Advanced Science Research Center, JAEA, b) Environment and Industrial Materials Research Division, QuBS, JAEA Ion implantation is a powerful technique for doping impurities into crystals with non-equilibrium concentration at low temperature. This technique may be used in fabrication of diluted magnetic semiconductors (DMS) that require high-concentration magnetic atom doping without a secondary phase formation. However, radiation damages are introduced by ion implantation. Recent calculation studies have suggested that a presence of vacancies affects the magnetic properties in DMS 1) . In this study, magnetic ions were implanted into compound semiconductor crystals by using an ion-implantation technique. Furthermore, we have attempted to clarify the correlation between the magnetic properties and presence of vacancy-type defects. Hydrothermal-grown n-type ZnO(0001) single crystals were implanted with several different energy Cr + ions up to 380 keV to a fluence of 1 × 10 16 ions/cm 2 at RT. After ion implantation, the isochronal annealing was conducted in the range up to 1,100 o C with a step of 100 o C for 30 min in a nitrogen atmosphere. The Doppler broadening of annihilation radiation (DBAR) spectra were acquired at RT after the annealing at each temperature. Moreover, after annealing up to 1,100 o C, XRD and SQUID measurements were performed. Figure 1 shows the change in the peak intensity of a Normalized S parameter 4-07 1.25 1.20 1.15 1.10 1.05 1.00 unimplanted state 0 200 400 600 800 1000 1200 Annealing Temperature, T ( o C) Fig. 1 The change in the S parameter for 1 × 10 16 Cr + ions/cm 2 implanted ZnO before and during isochronal annealing. The dashed line represents a value of S for unimplanted ZnO. JAEA-Review 2010-065 - 131 - DBAR spectrum (S parameter) obtained with beam energy of 5 keV for a Cr + -implanted ZnO crystal during isochronal annealing. From this, irradiation-induced vacancies were clustering up to 600 o C, and such vacancy clusters were annealed out at 900 o C. From XRD measurements after annealing at 1,100 o C, no secondary phase peaks were observed. SQUID measurement result for the 1,100 o C- annealed sample was shown in Fig. 2. In this sample, a clear magnetic hysteresis was not observed. In further study, evaluation of samples with higher impurity concentrations is needed. Reference 1) L. Liu et al., Phys. Rev. Lett. 100 (2008) 127203. Magnetization, M (emu) Magnetization, M (emu) (emu) 0.0001 0 -0.0001 ) [10 -5 [10 ] -5 ] 4 2 0 -2 -4 T = 3 K -50 0 50 Magnetic field, H (kOe) T = 3 K -2 0 2 Magnetic field, H (kOe) Fig. 2 Magnetization curves of a ZnO sample Cr + -ion-implanted and annealed at 1,100 o C for 30 min in a nitrogen atmosphere.
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JAEA-Review 2010-065 JAEA Takasaki
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JAEA-Review 2010-065 PREFACE This r
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JAEA-Review 2010-065 and pulsed hea
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JAEA-Review 2010-065 1-23 Studies o
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JAEA-Review 2010-065 3-24 Lethal Ef
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JAEA-Review 2010-065 4-07 Fabricati
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JAEA-Review 2010-065 5. Status of I
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JAEA-Review 2010-065 1-13 Alpha-rad
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1-01 Radiation Resistance of InGaP/
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1-03 Evaluation of Soft Error Rates
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1-05 Heavy-ion Induced Current in S
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Total Ionizing Dose Tolerance of Si
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1-09 Evaluation of Single Event Eff
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Hydrogen Diffusion in a-Si:H Thin F
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1-13 Alpha-radiolysis of Organic Ex
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Study on Stability of Cs·Sr Solven
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Irradiation Effect of Gamma-Rays on
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1-19 Development of Radiation Resis
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1-21 Alpha-Ray Irradiation Damage o
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1-23 Studies on Microstructure and
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1-25 Effect of Groundwater Radiolys
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1-27 Simulation of Neutron Damage M
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1-29 Irradiation Hardening in Ion-i
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1-31 Preparation of Anion-Exchange
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1-33 Radiation-Induced Graft Polyme
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JAEA-Review 2010-065 2. Environment
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2-02 Development of Zwitterionic Mo
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Modification of Hydroxypropyl Cellu
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The Recovery of Precious Metals Usi
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2-08 ESR Study on Carboxymethyl Chi
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JAEA-Review 2010-065 3. Biotechnolo
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JAEA-Review 2010-065 3-28 Electron
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JAEA-Review 2010-065 3-51 PET Studi
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3-02 Mutagenic effects of He ion pa
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3-04 Functional Analysis of Flavono
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3-06 Generation New Ornamental Plan
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3-08 Stability of Flower-colour Mut
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3-10 JAEA-Review 2010-065 Effects o
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3-12 Producing New Gene Resources i
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3-14 Production of Soybean Mutants
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Assessment of Irradiation Treatment
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3-18 Effect of Different LET Radiat
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3-20 JAEA-Review 2010-065 Fungicide
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3-22 JAEA-Review 2010-065 FACS-base
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Page 104 and 105: 3-32 Carbon-ion Microbeam Induces B
Page 106 and 107: 3-34 Biological Effects of Carbon I
Page 108 and 109: 3-36 Difference in Bystander Lethal
Page 110 and 111: 3-38 Analysis of Lethal Effect Medi
Page 112 and 113: 3-40 Irradiation with Carbon Ion Be
Page 114 and 115: 3-42 Expression of Two Gelsolins in
Page 116 and 117: 3-44 Analysis of Bystander Cell Sig
Page 118 and 119: 3-46 Quantitative Evaluation of Ric
Page 120 and 121: 3-48 Visualization of 107 Cd Accumu
Page 122 and 123: 3-50 Uniformity Measurement of Newl
Page 124 and 125: 3-52 Imaging and Biodistribution of
Page 126 and 127: 3-54 Improvement of Spatial Resolut
Page 128 and 129: 3-56 The Optimum Conditions in the
Page 130 and 131: 3-58 Evaluation of Cisplatin Concen
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Page 138 and 139: JAEA-Review 2010-065 4-39 Relations
Page 141 and 142: 4-01 Hydrogen Gasochromism of WO3 F
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Page 151 and 152: 4-11 Control of Radial Size of Poly
Page 153 and 154: 4-13 Behavior of N Atoms in Nitridi
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Page 159 and 160: 4-19 Radiation-Induced Electrical D
Page 161 and 162: 4-21 Study on Cu Precipitation in E
Page 163 and 164: 4-23 Evaluation of Fluorescence Mat
Page 165 and 166: 4-25 Evaluation of the ZrC Layer fo
Page 167 and 168: 4-27 Structure Analysis of K/Si(111
Page 169 and 170: 4-29 LET Effect on the Radiation In
Page 171 and 172: 4-31 Stabilization of Measurement S
Page 173 and 174: Systematic Measurement of Neutron a
Page 175 and 176: 4-35 Measurement of Neutron Fluence
Page 177 and 178: 4-37 Evaluation of the Response Cha
Page 179 and 180: 4-39 Relationship between Internucl
Page 181 and 182: 4-41 Analysis of Radiation Damage a
Page 183 and 184: 4-43 Positive Secondary Ion Emissio
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Page 187 and 188: 4-47 Fabrication of Dielectrophoret
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Page 191 and 192: 4-51 Development of Beam Generation
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Operation of the AVF Cyclotron T. N
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Operation of Electron Accelerator a
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5-06 FACILITY USE PROGRAM in Takasa
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5-08 Radioactive Waste Management i
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Appendix 2 List of Related Patents
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Appendix 4 Type of Research Collabo
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表1.SI 基本単位基本量 SI
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