8Mx8 DRAM
8Mx8 DRAM 8Mx8 DRAM
KM48C8000B, KM48C8100B CMOS DRAM DC AND OPERATING CHARACTERISTICS (Continued) Symbol Power Speed ICC1 Don′t care ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.) ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min) -45 -5 -6 *Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4, Max KM48C8000B KM48C8100B address can be changed maximum once within one fast page mode cycle time, tPC. 100 90 80 ICC2 Normal Don′t care 2 2 mA ICC3 Don′t care ICC4 Don′t care -45 -5 -6 -45 -5 -6 100 90 80 70 60 50 ICC5 Normal Don′t care 1 1 mA ICC6 Don′t care -45 -5 -6 100 90 80 130 120 110 130 120 110 80 70 60 130 120 110 Units mA mA mA mA mA mA mA mA mA mA mA mA
KM48C8000B, KM48C8100B CMOS DRAM CAPACITANCE (TA=25°C, VCC=5.0V, f=1MHz) Parameter Symbol Min Max Units Input capacitance [A0 ~ A12] CIN1 - 5 pF Input capacitance [RAS, CAS, W, OE] CIN2 - 7 pF Output capacitance [DQ0 - DQ7] CDQ - 7 pF AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2) Test condition : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V Parameter Symbol -45 -5 -6 Min Max Min Max Min Max Random read or write cycle time tRC 80 90 110 ns Read-modify-write cycle time tRWC 115 133 153 ns Units Note Access time from RAS tRAC 45 50 60 ns 3,4,10 Access time from CAS tCAC 12 13 15 ns 3,4,5 Access time from column address tAA 23 25 30 ns 3,10 CAS to output in Low-Z tCLZ 0 0 0 ns 3 Output buffer turn-off delay tOFF 0 13 0 13 0 13 ns 6 Transition time (rise and fall) tT 1 50 1 50 1 50 ns 2 RAS precharge time tRP 25 30 40 ns RAS pulse width tRAS 45 10K 50 10K 60 10K ns RAS hold time tRSH 12 13 15 ns CAS hold time tCSH 45 50 60 ns CAS pulse width tCAS 12 10K 13 10K 15 10K ns RAS to CAS delay time tRCD 18 33 20 37 20 45 ns 4 RAS to column address delay time tRAD 13 22 15 25 15 30 ns 10 CAS to RAS precharge time tCRP 5 5 5 ns Row address set-up time tASR 0 0 0 ns Row address hold time tRAH 8 10 10 ns Column address set-up time tASC 0 0 0 ns Column address hold time tCAH 8 10 10 ns Column address to RAS lead time tRAL 23 25 30 ns Read command set-up time tRCS 0 0 0 ns Read command hold time referenced to CAS tRCH 0 0 0 ns 8 Read command hold time referenced to RAS tRRH 0 0 0 ns 8 Write command hold time tWCH 8 10 10 ns Write command pulse width tWP 8 10 10 ns Write command to RAS lead time tRWL 13 15 15 ns Write command to CAS lead time tCWL 12 13 15 ns Data set-up time tDS 0 0 0 ns 9 Data hold time tDH 10 10 10 ns 9
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KM48C8000B, KM48C8100B CMOS <strong>DRAM</strong><br />
DC AND OPERATING CHARACTERISTICS (Continued)<br />
Symbol Power Speed<br />
ICC1 Don′t care<br />
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)<br />
ICC2 : Standby Current (RAS=CAS=W=VIH)<br />
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)<br />
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)<br />
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)<br />
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)<br />
-45<br />
-5<br />
-6<br />
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.<br />
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,<br />
Max<br />
KM48C8000B KM48C8100B<br />
address can be changed maximum once within one fast page mode cycle time, tPC.<br />
100<br />
90<br />
80<br />
ICC2 Normal Don′t care 2 2 mA<br />
ICC3 Don′t care<br />
ICC4 Don′t care<br />
-45<br />
-5<br />
-6<br />
-45<br />
-5<br />
-6<br />
100<br />
90<br />
80<br />
70<br />
60<br />
50<br />
ICC5 Normal Don′t care 1 1 mA<br />
ICC6 Don′t care<br />
-45<br />
-5<br />
-6<br />
100<br />
90<br />
80<br />
130<br />
120<br />
110<br />
130<br />
120<br />
110<br />
80<br />
70<br />
60<br />
130<br />
120<br />
110<br />
Units<br />
mA<br />
mA<br />
mA<br />
mA<br />
mA<br />
mA<br />
mA<br />
mA<br />
mA<br />
mA<br />
mA<br />
mA
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