Enhanced Polymer Passivation Layer for Wafer Level Chip Scale ...

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12. Reflow soldering Figure 3.15 Solder ball placement method developed in this research - Reflow oven: Right after the solder ball placement, the wafer was transferred into a reflow oven to melt the solder, heat the adjoining surface, and form a metallurgical bond between the solder and pads. The reflow soldering process can be divided into four phases, called “zones” as shown in Figure 3.16 for lead free alloy. They are: preheat, soak, reflow, and cooling. The preheat zone is introduced to reduce the risk 64
of thermal shock. If the temperature rate is too fast, the component may be damaged due to the thermal influence such as thermal stress inside the components. Figure 3.16 Schematic of the four zones of reflow soldering [73] The soak zone is intended to achieve a uniform thermal distribution before reaching the reflow zone. It is the flux activation zone where the volatiles in flux are further evaporated and the acid is thermally triggered. The flux reacts with the oxides on the surface of the solder spheres and bumping pads. If an oven has many heating zones, a significant number of zones should be dedicated to the soak zone. Once the temperature is above the melting point of the solder, the system enters the reflow zone. With the aid of flux, the solder bumps melt and the molten solders spread onto 65
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Enhanced Polymer Passivation Layer
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SolderBrace coatings were low tempe
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Table of Contents Abstract ........
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4.4 Failure Analysis ..............
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List of Figures Figure 1.1 Trends i
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Figure 3.17 SAC305 Reflow profile .
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CHAPTER 1 INTRODUCTION In the era o
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This effect changes the package to
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1.4 Solder Joint Fatigue Figure 1.2
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leading to the solder joint failure
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umped wafers. The coating is stenci
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11 Bumped Wafer Print over ball Pre
Page 25 and 26: 2.1 Chip Scale Package Technology C
Page 27 and 28: Mountable with conventional assembl
Page 29 and 30: Figure 2.3 Cross section of a typic
Page 31 and 32: Table 2.1 Comparison between tradit
Page 33 and 34: In-Situ Bumped Wafers Placed Prefor
Page 35 and 36: of solder joint failure, and they o
Page 37 and 38: (a) (b) Figure 2.8(a). Metalized ph
Page 39 and 40: "underfilled" structure distributes
Page 41 and 42: have generally been the modificatio
Page 43 and 44: are “low temperature” wafer lev
Page 45 and 46: 2.3.4 Optimized SolderBrace Materia
Page 47 and 48: CHAPTER 3 WLCSP DIE FABRCIATION In
Page 49 and 50: Table 3.1 Test Die used for Reliabi
Page 51 and 52: Figure 3.4 Fabrication Process Flow
Page 53 and 54: spin coating. A layer of light sens
Page 55 and 56: layer, is investigated as a potenti
Page 57 and 58: 10. Final cleaning: After the passi
Page 59 and 60: Cyclopentanone, a colorless liquid
Page 61 and 62: used to check the basic spin and ph
Page 63 and 64: Figure 3.7 SolderBrace film thickne
Page 65 and 66: 6. Post-UV exposure bake: This step
Page 67 and 68: 8. Pattern characterization: The su
Page 69 and 70: offers the optimum flux release cha
Page 71 and 72: fatigue resistance, lower cost SAC
Page 73 and 74: Figure 3.12 Solder Ball Placement M
Page 75: of solder balls to the holes on the
Page 79 and 80: Figure 3.17 SAC305 Reflow profile -
Page 81 and 82: foaming and high performance cleane
Page 83 and 84: - Polish clean: used the optimized
Page 85 and 86: Figure 3.22 SolderBrace printed waf
Page 87 and 88: Voids Figure 3.25 SolderBrace Mater
Page 89 and 90: cutting speed was set at a low valu
Page 91 and 92: Figure 4.2 Process Flow of Board As
Page 93 and 94: pitch, and bump diameter), and subs
Page 95 and 96: 4.2.4 X-Ray Inspection Figure 4.5 R
Page 97 and 98: Figure 4.6 Air to air thermal cycli
Page 99 and 100: Figure 4.7 Thermal Cycling Setup 87
Page 101 and 102: 4.4 Failure Analysis The main purpo
Page 103 and 104: Figure 4.10 Pad cratering failure o
Page 105 and 106: CHAPTER 5 FINITE ELEMENT ANALYSIS I
Page 107 and 108: 5.1.1 Modeling Approaches Due to th
Page 109 and 110: are shown in Figure 5.2. However, t
Page 111 and 112: 5.1.2 Material Properties Many pack
Page 113 and 114: strain rate sensitivity. The evolut
Page 115 and 116: Morris et a1 [96] used a double pow
Page 117 and 118: focus on the time-dependent effects
Page 119 and 120: 5.2 Modeling Procedure In this proj
Page 121 and 122: Figure 5.6 The diagonal symmetry mo
Page 123 and 124: 5.2.3 Meshing Table 5.2 Anand const
Page 125 and 126: direction, but that the surface is
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PREP7 tref,398 ! set zero strain te
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5.2.7 Thermal Fatigue Life Predicti
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CHAPTER 6 CONCLUSIONS Wafer level c
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References 1. Future Trends in Elec
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23. Electronic Packaging and Interc
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48. Ultra Low Stress and Low Temper
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70. Factors for Successful Wafer-Le
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92. Microstructural Dependendence o
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111. Nonlinear Analysis of Full Mat
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