Enhanced Polymer Passivation Layer for Wafer Level Chip Scale ...

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widespread use in high yield and high volume applications such as the practical lower limit to the size of sphere that can be dropped, and the yields are statistically low [71]. Over the last 10 years, several methods for the mass transfer of solder balls to wafers have been investigated and developed. Figure 3.12 shows the ball placement method developed by DEK [72]. It utilized screen printing. The process begins with loading the wafer in a conveyorized aluminum pallet. This pallet is then transported into the flux printing machine, which can visually align the wafer with an emulsion mesh fluxing screen. After flux printing onto all bumping pads, the wafer and pallet are transported to the ball placement machine. Following accurate visual alignment with the metal ball placement stencil, the wafer is brought into contact with the underside of the stencil before the ball transfer head traverses the topside of the stencil. This deposits a single solder ball into each of the stencil’s apertures. The alignment process accurately ensures that the apertures coincide with the fluxed solder bump pads. 60
Figure 3.12 Solder Ball Placement Method by DEK [72] Pac Tech USA also invented a new solder sphere transfer technology that uses patterned vacuum tooling to simultaneously pick up preformed spheres and transfer them over to the wafer [71]. Figure 3.13 outlines the main steps in this solder ball transfer process. First, the vacuum stencil (tooling plate) is lowered into the sphere reservoir. Vacuum is applied to the tooling plate to selectively pick up the spheres. Then the tooling is lowered and aligned to the wafer to bring the solder spheres into contact with the wafer pads. Finally, the vacuum is turned off; the tooling plate is raised; and the solder spheres are reflowed. Since this Solder Ball Transfer equipment has a placement accuracy of
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Enhanced Polymer Passivation Layer
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SolderBrace coatings were low tempe
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Table of Contents Abstract ........
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4.4 Failure Analysis ..............
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List of Figures Figure 1.1 Trends i
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Figure 3.17 SAC305 Reflow profile .
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CHAPTER 1 INTRODUCTION In the era o
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This effect changes the package to
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1.4 Solder Joint Fatigue Figure 1.2
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leading to the solder joint failure
Page 21 and 22: umped wafers. The coating is stenci
Page 23 and 24: 11 Bumped Wafer Print over ball Pre
Page 25 and 26: 2.1 Chip Scale Package Technology C
Page 27 and 28: Mountable with conventional assembl
Page 29 and 30: Figure 2.3 Cross section of a typic
Page 31 and 32: Table 2.1 Comparison between tradit
Page 33 and 34: In-Situ Bumped Wafers Placed Prefor
Page 35 and 36: of solder joint failure, and they o
Page 37 and 38: (a) (b) Figure 2.8(a). Metalized ph
Page 39 and 40: "underfilled" structure distributes
Page 41 and 42: have generally been the modificatio
Page 43 and 44: are “low temperature” wafer lev
Page 45 and 46: 2.3.4 Optimized SolderBrace Materia
Page 47 and 48: CHAPTER 3 WLCSP DIE FABRCIATION In
Page 49 and 50: Table 3.1 Test Die used for Reliabi
Page 51 and 52: Figure 3.4 Fabrication Process Flow
Page 53 and 54: spin coating. A layer of light sens
Page 55 and 56: layer, is investigated as a potenti
Page 57 and 58: 10. Final cleaning: After the passi
Page 59 and 60: Cyclopentanone, a colorless liquid
Page 61 and 62: used to check the basic spin and ph
Page 63 and 64: Figure 3.7 SolderBrace film thickne
Page 65 and 66: 6. Post-UV exposure bake: This step
Page 67 and 68: 8. Pattern characterization: The su
Page 69 and 70: offers the optimum flux release cha
Page 71: fatigue resistance, lower cost SAC
Page 75 and 76: of solder balls to the holes on the
Page 77 and 78: of thermal shock. If the temperatur
Page 79 and 80: Figure 3.17 SAC305 Reflow profile -
Page 81 and 82: foaming and high performance cleane
Page 83 and 84: - Polish clean: used the optimized
Page 85 and 86: Figure 3.22 SolderBrace printed waf
Page 87 and 88: Voids Figure 3.25 SolderBrace Mater
Page 89 and 90: cutting speed was set at a low valu
Page 91 and 92: Figure 4.2 Process Flow of Board As
Page 93 and 94: pitch, and bump diameter), and subs
Page 95 and 96: 4.2.4 X-Ray Inspection Figure 4.5 R
Page 97 and 98: Figure 4.6 Air to air thermal cycli
Page 99 and 100: Figure 4.7 Thermal Cycling Setup 87
Page 101 and 102: 4.4 Failure Analysis The main purpo
Page 103 and 104: Figure 4.10 Pad cratering failure o
Page 105 and 106: CHAPTER 5 FINITE ELEMENT ANALYSIS I
Page 107 and 108: 5.1.1 Modeling Approaches Due to th
Page 109 and 110: are shown in Figure 5.2. However, t
Page 111 and 112: 5.1.2 Material Properties Many pack
Page 113 and 114: strain rate sensitivity. The evolut
Page 115 and 116: Morris et a1 [96] used a double pow
Page 117 and 118: focus on the time-dependent effects
Page 119 and 120: 5.2 Modeling Procedure In this proj
Page 121 and 122: Figure 5.6 The diagonal symmetry mo
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5.2.3 Meshing Table 5.2 Anand const
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direction, but that the surface is
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PREP7 tref,398 ! set zero strain te
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5.2.7 Thermal Fatigue Life Predicti
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CHAPTER 6 CONCLUSIONS Wafer level c
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References 1. Future Trends in Elec
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23. Electronic Packaging and Interc
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48. Ultra Low Stress and Low Temper
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70. Factors for Successful Wafer-Le
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92. Microstructural Dependendence o
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111. Nonlinear Analysis of Full Mat
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