Enhanced Polymer Passivation Layer for Wafer Level Chip Scale ...

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Table 2.2 Comparison of Wafer Level Chip Scale Packaging Technologies[6] 2.2.2 WLCSP Process Flow In the semiconductor industry, front-end corresponds to the wafer fabrication process while back-end corresponds to product assembly, packaging and testing operations [36]. There are two types of back-end process flows, one is for wafers with in-situ bump formation and the other is for wafers requiring the placement of preformed solder balls for larger bumps. Figure 2.5 shows two separate paths for the backend processing of bumped wafers. One processes wafers with bumps already formed in the bumping front end and the other includes the process steps required for reflowing preformed solder balls [37]. 20
In-Situ Bumped Wafers Placed Preformed Balls Wafer Taping Wafer Grinding Wafer Detaping Wafer laser making Wafer map conversion Wafer probe test Wafer map merge Wafer 3D bump AOI Wafer mount Wafer saw/clean Wafer bump side AOI Wafer Pick&Place/Insp Pack Figure 2.5 Bumping Backend Process Flow [37] 21 Wafer Taping Wafer Grinding Wafer Detaping Wafer laser making Wafer fluxing Wafer ball placement Wafer solder ball reflow Wafer solder ball clean
Page 1 and 2: Enhanced Polymer Passivation Layer
Page 3 and 4: SolderBrace coatings were low tempe
Page 5 and 6: Table of Contents Abstract ........
Page 7 and 8: 4.4 Failure Analysis ..............
Page 9 and 10: List of Figures Figure 1.1 Trends i
Page 11 and 12: Figure 3.17 SAC305 Reflow profile .
Page 13 and 14: CHAPTER 1 INTRODUCTION In the era o
Page 15 and 16: This effect changes the package to
Page 17 and 18: 1.4 Solder Joint Fatigue Figure 1.2
Page 19 and 20: leading to the solder joint failure
Page 21 and 22: umped wafers. The coating is stenci
Page 23 and 24: 11 Bumped Wafer Print over ball Pre
Page 25 and 26: 2.1 Chip Scale Package Technology C
Page 27 and 28: Mountable with conventional assembl
Page 29 and 30: Figure 2.3 Cross section of a typic
Page 31: Table 2.1 Comparison between tradit
Page 35 and 36: of solder joint failure, and they o
Page 37 and 38: (a) (b) Figure 2.8(a). Metalized ph
Page 39 and 40: "underfilled" structure distributes
Page 41 and 42: have generally been the modificatio
Page 43 and 44: are “low temperature” wafer lev
Page 45 and 46: 2.3.4 Optimized SolderBrace Materia
Page 47 and 48: CHAPTER 3 WLCSP DIE FABRCIATION In
Page 49 and 50: Table 3.1 Test Die used for Reliabi
Page 51 and 52: Figure 3.4 Fabrication Process Flow
Page 53 and 54: spin coating. A layer of light sens
Page 55 and 56: layer, is investigated as a potenti
Page 57 and 58: 10. Final cleaning: After the passi
Page 59 and 60: Cyclopentanone, a colorless liquid
Page 61 and 62: used to check the basic spin and ph
Page 63 and 64: Figure 3.7 SolderBrace film thickne
Page 65 and 66: 6. Post-UV exposure bake: This step
Page 67 and 68: 8. Pattern characterization: The su
Page 69 and 70: offers the optimum flux release cha
Page 71 and 72: fatigue resistance, lower cost SAC
Page 73 and 74: Figure 3.12 Solder Ball Placement M
Page 75 and 76: of solder balls to the holes on the
Page 77 and 78: of thermal shock. If the temperatur
Page 79 and 80: Figure 3.17 SAC305 Reflow profile -
Page 81 and 82: foaming and high performance cleane
Page 83 and 84:
- Polish clean: used the optimized
Page 85 and 86:
Figure 3.22 SolderBrace printed waf
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Voids Figure 3.25 SolderBrace Mater
Page 89 and 90:
cutting speed was set at a low valu
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Figure 4.2 Process Flow of Board As
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pitch, and bump diameter), and subs
Page 95 and 96:
4.2.4 X-Ray Inspection Figure 4.5 R
Page 97 and 98:
Figure 4.6 Air to air thermal cycli
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Figure 4.7 Thermal Cycling Setup 87
Page 101 and 102:
4.4 Failure Analysis The main purpo
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Figure 4.10 Pad cratering failure o
Page 105 and 106:
CHAPTER 5 FINITE ELEMENT ANALYSIS I
Page 107 and 108:
5.1.1 Modeling Approaches Due to th
Page 109 and 110:
are shown in Figure 5.2. However, t
Page 111 and 112:
5.1.2 Material Properties Many pack
Page 113 and 114:
strain rate sensitivity. The evolut
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Morris et a1 [96] used a double pow
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focus on the time-dependent effects
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5.2 Modeling Procedure In this proj
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Figure 5.6 The diagonal symmetry mo
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5.2.3 Meshing Table 5.2 Anand const
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direction, but that the surface is
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PREP7 tref,398 ! set zero strain te
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5.2.7 Thermal Fatigue Life Predicti
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CHAPTER 6 CONCLUSIONS Wafer level c
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References 1. Future Trends in Elec
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23. Electronic Packaging and Interc
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48. Ultra Low Stress and Low Temper
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70. Factors for Successful Wafer-Le
Page 141 and 142:
92. Microstructural Dependendence o
Page 143:
111. Nonlinear Analysis of Full Mat
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