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Enhanced Polymer Passivation Layer for Wafer Level Chip Scale ...

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creep de<strong>for</strong>mation and time independent plastic de<strong>for</strong>mation, it is not recoverable while the<br />

elastic de<strong>for</strong>mation is recoverable. A combination of plastic, elastic, viscoplastic, or<br />

viscoelastic/creep models can be used to represent the constitutive behavior of materials.<br />

In order to simulate correct solder stress-strain behavior under different loadings, the<br />

selection of constitutive model <strong>for</strong> solder joints is very critical since it is one of the important<br />

factors that can affect the accurate evaluation of the fatigue strength. Several creep and<br />

viscoplastic models have been discussed in the past to describe the thermomechanical behavior<br />

of SnAgCu solders.<br />

Anand Viscoplastic Model: Anand [91] proposed a simple set of constitutive equations<br />

<strong>for</strong> large, isotropic, viscoplastic de<strong>for</strong>mations. There are two basic features of this model. First,<br />

no explicit yield condition and no loading/unloading criterion are used. Second, this model<br />

consists of single scalar internal state variable "s", called the de<strong>for</strong>mation resistance, to measure<br />

the isotropic resistance offered by the solder to the plastic flow. The Anand model can represent<br />

the physical phenomena of strain-rate and temperature sensitivity, strain rate history effects,<br />

strain-hardening and the restoration process of dynamic recovery. This model is broken down<br />

into a flow equation and three evolution equations. The flow equation accommodates the strain<br />

rate dependence on the stress at constant structure:<br />

where p<br />

<br />

Q <br />

p Aexp<br />

sinh <br />

RT<br />

<br />

s<br />

<br />

<br />

100<br />

1/ m<br />

(5-1)<br />

is the inelastic strain rate, A is a pre-exponential factor, Q is the activation energy, T is<br />

the current absolute temperature, R is the universal gas constant,ξ is a multiplier of stress, σ is<br />

the current tensile stress, s is the internal state variable (de<strong>for</strong>mation resistance), and m is the

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