ESSDERC 2007 - TUM
ESSDERC 2007 - TUM
ESSDERC 2007 - TUM
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CONFERENCE VENUE<br />
The conference will be held at the Technical University Munich (<strong>TUM</strong>) in the heart of Munich<br />
close to sites such as the Old Town with its shopping facilities, art galleries, recreational parks<br />
and the world‘s largest scientific-technical museum. Further attractions include sports and<br />
music events, the famous architecture of the Olympic stadium and the well-known Bavarian<br />
beer garden culture. Visitors who choose to stay over the weekend can enjoy the scenery of<br />
the Alps which are a short train ride away. The “Weltstadt mit Herz“ (Cosmopolitan City with<br />
Heart) welcomes you!<br />
Englischer Garten<br />
The “Englischer Garten” or English Garden is a large urban public park that stretches from<br />
the city center to the northeastern city limits of Munich, Germany. It was founded in 1789 by<br />
Benjamin Thompson, who is also known as Count of Rumford. With an area covering 3.7 km²<br />
the “Englischer Garten” is one of the world‘s largest urban public parks.<br />
With 7,000 seats, the Chinesischer Turm‘s beer garden is the second largest beer garden in<br />
Munich. It is located inside the “Englischer Garten”.<br />
Deutsches Museum<br />
With its 28.000 square meters of exposition area with objects of over 50 scopes in natural<br />
sciences, the “Deutsches Museum“ (German Museum) is the biggest scientific-technical museum<br />
in the world. 1.5 million visitors per year document a great interest in the big variety of<br />
original exhibits. History of science and its influence on society is also a major focus of the<br />
German Museum.<br />
Pinakothek der Moderne<br />
The “Pinakothek der Moderne” is a modern art museum, situated in the city centre of Munich.<br />
Together with the “Alte Pinakothek” and the “Neue Pinakothek” it is part of Munich‘s “Kunstareal“<br />
(the “art area“).<br />
All three museums are within 5 min walking distance of the conference site.<br />
Feldherrenhalle and Theatinerkirche at Odeonsplatz<br />
Conference Secretariat<br />
Institute for Technical Electronics<br />
Technical University Munich<br />
Theresienstrasse 90<br />
D-80290 Munich<br />
Germany<br />
Fax: +49 89 289 22938<br />
info@essderc<strong>2007</strong>.org<br />
CONTACT INFORMATION<br />
ORGANIZATION COMMITTEE<br />
Conference Chair Doris Schmitt-Landsiedel <strong>TUM</strong><br />
<strong>ESSDERC</strong> TPC Chair Roland Thewes Qimonda<br />
ESSCIRC TPC Chair Tobias Noll RWTH Aachen<br />
University<br />
Tutorials Chairs<br />
<strong>ESSDERC</strong> Ralf Brederlow Texas Instruments<br />
ESSCIRC Rudolf Koch Infineon<br />
Local Co-Chairs Gerhard Wachutka <strong>TUM</strong><br />
Philip Teichmann <strong>TUM</strong><br />
Florian Chouard <strong>TUM</strong><br />
Conference Secretariat Susanne Prucker <strong>TUM</strong><br />
Lydia Thalau <strong>TUM</strong><br />
KEY DATES<br />
Local Organization<br />
Congress & Seminar Management<br />
Industriestr. 35<br />
D-82194 Gröbenzell<br />
Germany<br />
Fax: +49 8142 54735<br />
info@csm-congress.de<br />
SCHEDULE AT A GLANCE<br />
Monday, Sept. 10 th , <strong>2007</strong> Tutorials<br />
Tuesday, Sept. 11 th , <strong>2007</strong> Conference Opening<br />
Technical Sessions<br />
Welcome Reception<br />
Wednesday, Sept. 12 th , <strong>2007</strong> Technical Sessions<br />
Conference Dinner<br />
Thursday, Sept. 13 th , <strong>2007</strong> Technical Sessions<br />
Friday, Sept. 14 th , <strong>2007</strong> Workshops<br />
Submission deadline April 7 th , <strong>2007</strong><br />
Notification of acceptance May 25 th , <strong>2007</strong><br />
Early registration deadline July 20 th , <strong>2007</strong><br />
Final Call for Papers<br />
<strong>ESSDERC</strong> <strong>2007</strong><br />
37 th European<br />
Solid-State Device Research<br />
Conference<br />
11-13 September <strong>2007</strong><br />
Munich, Germany<br />
Paper submission deadline: April 7 th , <strong>2007</strong><br />
Electronic submission<br />
Organization committee at:<br />
Technical co-sponsorship:<br />
www.essderc<strong>2007</strong>.org
GENERAL SCOPE OF THE CONFERENCE JOINT PLENARY TALKS<br />
PAPER SUBMISSION<br />
The aim of the <strong>ESSDERC</strong> conference is to provide an annual European forum for the presentation<br />
and discussion of recent advances in solid-state devices and technologies.<br />
<strong>ESSDERC</strong> and its sister conference ESSCIRC, which deals with solid-state circuits, are governed<br />
by a single Steering Committee. The increasing level of integration for system-on-chip design<br />
made available by advances in silicon technology is stimulating more than ever before the need<br />
for deeper interaction among technologists, device experts, and circuit and system designers.<br />
While keeping separate Technical Program Committees, <strong>ESSDERC</strong> and ESSCIRC will share<br />
Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered<br />
for either conference are encouraged to attend any of the scheduled parallel sessions.<br />
The main themes for original contributions to be submitted to <strong>ESSDERC</strong> <strong>2007</strong> include, but are<br />
not limited to the following:<br />
Advanced Devices<br />
CMOS scaling; high performance, low power, and low voltage devices; SOI, SGOI, and SiON<br />
devices; SiGe, Ge, and strained devices; nano devices and related device physics; double and<br />
multi gate transistors; high mobility and ballistic devices.<br />
Processing & Integration<br />
Advances in integration for ULSI; SOI, SGOI, and SiON processing; 3D integration; new materials<br />
for CMOS; ICs patterning techniques; gate dielectrics; high k; gate stack and junction<br />
technology; silicidation; interconnects; low k dielectrics; damascene processing; cleaning and<br />
surface preparation.<br />
Telecommunication & Power Devices<br />
RF CMOS; passives; antennas; filters; resonators; inductors; RF MEMS/switches; SAW, BAW,<br />
and FBAR; oscillators, HBT; HEMT; bipolar devices; BiCMOS; high voltage and high power devices;<br />
SiC; high temperature operation; CMOS compatible power devices.<br />
Modeling and Simulation<br />
Compact, numerical, and physical modeling; device simulation; behavior models; quantum<br />
mechanical and non-stationary transport phenomena; ballistic transport; scattering models;<br />
process dispersions, parameter fluctuations, variability; TCAD; mixed electrical-thermal modeling<br />
and simulation.<br />
Characterization and Reliability<br />
Characterization techniques; parameter extraction; advanced test structures and methods;<br />
noise; gate dielectric, device, and interconnect reliability; CHE effects; NBTI; SILC; memory<br />
retention; process-induced damages, ESD, EMI; defect monitoring and control; metrology.<br />
Memory, SoC & SiP<br />
Embedded and stand-alone memories; DRAM, FeRAM, MRAM, PCRAM, CBRAM, Flash, SONOS;<br />
nanocrystal memories; single and few electron memories; 3D IC stacks; integrated MEMS and<br />
NEMS; integration of detectors, sensors, and actuators; CCDs and CMOS imagers; optical onchip<br />
communication, optical links; display technologies; TFTs; IC cooling techniques; SoC and<br />
SiP packaging; microsystem packaging.<br />
Emerging Technologies, Sensors & Actuators<br />
Nanotubes; single-electron, molecular and quantum devices; spintronics; self-assembling<br />
structures and emerging materials; photonic devices; light emission, APDs, single photon detectors;<br />
polymer transistors, sensors, light-emitting diodes and optoelectronic devices; flexible<br />
displays; biochemical sensors and actuators; microfluidic devices; micromachining; MEMS and<br />
NEMS.<br />
Joint <strong>ESSDERC</strong>/ESSCIRC Sessions on:<br />
Sensors and Imagers<br />
Technology; mixed signal design; algorithms.<br />
Yield and Reliability<br />
Yield and reliability related technology development, characterization, and modeling; design<br />
for manufacturability.<br />
<strong>ESSDERC</strong> and ESSCIRC will share Plenary Sessions where distinguished invited speakers will<br />
discuss issues of interest for the attendees of both conferences.<br />
A. DeHon (University of Pennsylvania)<br />
Nanoelectronic Architectures<br />
P. Fromherz (MPI for Biochemistry)<br />
Joining Microelectronics with Microionics: Nerve Cells and Brain Tissue on<br />
Semiconductor Chips<br />
K. Ishimaru (Toshiba)<br />
45/32 nm CMOS<br />
S. Nassif (IBM)<br />
Holistic Coupling of Manufacturing and Design<br />
A. Theuwissen (DALSA)<br />
CMOS Imagers – Status, Trends, and Future Perspectives<br />
W. Ziebart (Infineon Technologies)<br />
Technical and Economical Trends in Microelectronics<br />
<strong>ESSDERC</strong> PLENARY TALKS<br />
In addition, there will be renowned <strong>ESSDERC</strong> invited speakers who will address issues more focussed<br />
on solid-state devices of specific interest for the integrated circuit design community.<br />
K. Kim (Samsung)<br />
Advanced Memory Technologies<br />
D. de Leeuw (Philips Research)<br />
Molecular Devices: From Ideas to Experimental Evidence<br />
E. Sangiorgi (University of Bologna)<br />
Modeling Transport in Decananometer MOSFETs<br />
TUTORIALS AND WORKSHOPS<br />
A Tutorial Day will be organized on Monday, September 10 th , <strong>2007</strong>, while a Workshop Day will<br />
take place on Friday, September 14 th , <strong>2007</strong>.<br />
BEST PAPER AWARDS<br />
Papers presented at the conference will be considered for the Best Paper Award and for the<br />
best „Young Scientist“ Paper Award. The selection will be based on the results of the paper<br />
selection process and the judgment of the conference participants. The award delivery will take<br />
place at <strong>ESSDERC</strong> 2008.<br />
The <strong>2007</strong> <strong>ESSDERC</strong> conference will allow only electronic submission of papers in PDF<br />
format. Prospective authors must submit their paper(s) via the conference website.<br />
Papers must be submitted in the final format to be published in the proceedings. They must<br />
not exceed four A4 pages with all illustrations and references included. The size of the PDF<br />
files submitted must not exceed 2 MBytes. Manuscript guidelines as well as instructions on<br />
how to submit electronically will be available on the conference website.<br />
Conference Website<br />
http://www.essderc<strong>2007</strong>.org<br />
All paper submissions must be received by April 7 th , <strong>2007</strong>.<br />
After selection of papers, the authors will be informed about the decision of the Technical<br />
Program Committee by e-mail at the end of May <strong>2007</strong>. At the same time, the complete<br />
program will be published on the conference website.<br />
The working language of the conference is English, which must also be used for all presentations<br />
and printed material.<br />
REVIEW PROCESS<br />
Papers submitted for review must clearly state:<br />
• The purpose of the work<br />
• How and to what extent it advances the state-of-the-art<br />
• Specific results and their impact<br />
The degree to which the paper deals with the above issues is fundamental to a successful<br />
review and selection of the paper. The most frequent cause of rejections of submitted<br />
papers is a lack of new results. Only work that has not been previously published at the time<br />
of the conference will be considered. Submission of a paper for review and subsequent acceptance<br />
is considered by the committee as a commitment that the work will not be placed<br />
in the public domain prior to the conference.<br />
<strong>ESSDERC</strong> / ESSCIRC STEERING COMMITTEE<br />
Giorgio Baccarani (Chair) University of Bologna<br />
Reinout Woltjer (Vice-Chair) NXP<br />
Ralf Brederlow Texas Instruments<br />
Cor Claeys (permanent secretary) IMEC<br />
Peter Ashburn University of Southampton<br />
Sorin Cristoloveanu ENSERG-IMEP<br />
Franz Dielacher Infineon<br />
Christian Enz CSEM<br />
Hervé Mingam ST Microelectronics<br />
Ernesto Perea ST Microelectronics<br />
Hans-Jörg Pfleiderer University of Ulm<br />
William Redman-White Philips Semiconductor<br />
Hannu Tenhunen KTH Stockholm