29.04.2013 Views

ESSDERC 2007 - TUM

ESSDERC 2007 - TUM

ESSDERC 2007 - TUM

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

CONFERENCE VENUE<br />

The conference will be held at the Technical University Munich (<strong>TUM</strong>) in the heart of Munich<br />

close to sites such as the Old Town with its shopping facilities, art galleries, recreational parks<br />

and the world‘s largest scientific-technical museum. Further attractions include sports and<br />

music events, the famous architecture of the Olympic stadium and the well-known Bavarian<br />

beer garden culture. Visitors who choose to stay over the weekend can enjoy the scenery of<br />

the Alps which are a short train ride away. The “Weltstadt mit Herz“ (Cosmopolitan City with<br />

Heart) welcomes you!<br />

Englischer Garten<br />

The “Englischer Garten” or English Garden is a large urban public park that stretches from<br />

the city center to the northeastern city limits of Munich, Germany. It was founded in 1789 by<br />

Benjamin Thompson, who is also known as Count of Rumford. With an area covering 3.7 km²<br />

the “Englischer Garten” is one of the world‘s largest urban public parks.<br />

With 7,000 seats, the Chinesischer Turm‘s beer garden is the second largest beer garden in<br />

Munich. It is located inside the “Englischer Garten”.<br />

Deutsches Museum<br />

With its 28.000 square meters of exposition area with objects of over 50 scopes in natural<br />

sciences, the “Deutsches Museum“ (German Museum) is the biggest scientific-technical museum<br />

in the world. 1.5 million visitors per year document a great interest in the big variety of<br />

original exhibits. History of science and its influence on society is also a major focus of the<br />

German Museum.<br />

Pinakothek der Moderne<br />

The “Pinakothek der Moderne” is a modern art museum, situated in the city centre of Munich.<br />

Together with the “Alte Pinakothek” and the “Neue Pinakothek” it is part of Munich‘s “Kunstareal“<br />

(the “art area“).<br />

All three museums are within 5 min walking distance of the conference site.<br />

Feldherrenhalle and Theatinerkirche at Odeonsplatz<br />

Conference Secretariat<br />

Institute for Technical Electronics<br />

Technical University Munich<br />

Theresienstrasse 90<br />

D-80290 Munich<br />

Germany<br />

Fax: +49 89 289 22938<br />

info@essderc<strong>2007</strong>.org<br />

CONTACT INFORMATION<br />

ORGANIZATION COMMITTEE<br />

Conference Chair Doris Schmitt-Landsiedel <strong>TUM</strong><br />

<strong>ESSDERC</strong> TPC Chair Roland Thewes Qimonda<br />

ESSCIRC TPC Chair Tobias Noll RWTH Aachen<br />

University<br />

Tutorials Chairs<br />

<strong>ESSDERC</strong> Ralf Brederlow Texas Instruments<br />

ESSCIRC Rudolf Koch Infineon<br />

Local Co-Chairs Gerhard Wachutka <strong>TUM</strong><br />

Philip Teichmann <strong>TUM</strong><br />

Florian Chouard <strong>TUM</strong><br />

Conference Secretariat Susanne Prucker <strong>TUM</strong><br />

Lydia Thalau <strong>TUM</strong><br />

KEY DATES<br />

Local Organization<br />

Congress & Seminar Management<br />

Industriestr. 35<br />

D-82194 Gröbenzell<br />

Germany<br />

Fax: +49 8142 54735<br />

info@csm-congress.de<br />

SCHEDULE AT A GLANCE<br />

Monday, Sept. 10 th , <strong>2007</strong> Tutorials<br />

Tuesday, Sept. 11 th , <strong>2007</strong> Conference Opening<br />

Technical Sessions<br />

Welcome Reception<br />

Wednesday, Sept. 12 th , <strong>2007</strong> Technical Sessions<br />

Conference Dinner<br />

Thursday, Sept. 13 th , <strong>2007</strong> Technical Sessions<br />

Friday, Sept. 14 th , <strong>2007</strong> Workshops<br />

Submission deadline April 7 th , <strong>2007</strong><br />

Notification of acceptance May 25 th , <strong>2007</strong><br />

Early registration deadline July 20 th , <strong>2007</strong><br />

Final Call for Papers<br />

<strong>ESSDERC</strong> <strong>2007</strong><br />

37 th European<br />

Solid-State Device Research<br />

Conference<br />

11-13 September <strong>2007</strong><br />

Munich, Germany<br />

Paper submission deadline: April 7 th , <strong>2007</strong><br />

Electronic submission<br />

Organization committee at:<br />

Technical co-sponsorship:<br />

www.essderc<strong>2007</strong>.org


GENERAL SCOPE OF THE CONFERENCE JOINT PLENARY TALKS<br />

PAPER SUBMISSION<br />

The aim of the <strong>ESSDERC</strong> conference is to provide an annual European forum for the presentation<br />

and discussion of recent advances in solid-state devices and technologies.<br />

<strong>ESSDERC</strong> and its sister conference ESSCIRC, which deals with solid-state circuits, are governed<br />

by a single Steering Committee. The increasing level of integration for system-on-chip design<br />

made available by advances in silicon technology is stimulating more than ever before the need<br />

for deeper interaction among technologists, device experts, and circuit and system designers.<br />

While keeping separate Technical Program Committees, <strong>ESSDERC</strong> and ESSCIRC will share<br />

Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered<br />

for either conference are encouraged to attend any of the scheduled parallel sessions.<br />

The main themes for original contributions to be submitted to <strong>ESSDERC</strong> <strong>2007</strong> include, but are<br />

not limited to the following:<br />

Advanced Devices<br />

CMOS scaling; high performance, low power, and low voltage devices; SOI, SGOI, and SiON<br />

devices; SiGe, Ge, and strained devices; nano devices and related device physics; double and<br />

multi gate transistors; high mobility and ballistic devices.<br />

Processing & Integration<br />

Advances in integration for ULSI; SOI, SGOI, and SiON processing; 3D integration; new materials<br />

for CMOS; ICs patterning techniques; gate dielectrics; high k; gate stack and junction<br />

technology; silicidation; interconnects; low k dielectrics; damascene processing; cleaning and<br />

surface preparation.<br />

Telecommunication & Power Devices<br />

RF CMOS; passives; antennas; filters; resonators; inductors; RF MEMS/switches; SAW, BAW,<br />

and FBAR; oscillators, HBT; HEMT; bipolar devices; BiCMOS; high voltage and high power devices;<br />

SiC; high temperature operation; CMOS compatible power devices.<br />

Modeling and Simulation<br />

Compact, numerical, and physical modeling; device simulation; behavior models; quantum<br />

mechanical and non-stationary transport phenomena; ballistic transport; scattering models;<br />

process dispersions, parameter fluctuations, variability; TCAD; mixed electrical-thermal modeling<br />

and simulation.<br />

Characterization and Reliability<br />

Characterization techniques; parameter extraction; advanced test structures and methods;<br />

noise; gate dielectric, device, and interconnect reliability; CHE effects; NBTI; SILC; memory<br />

retention; process-induced damages, ESD, EMI; defect monitoring and control; metrology.<br />

Memory, SoC & SiP<br />

Embedded and stand-alone memories; DRAM, FeRAM, MRAM, PCRAM, CBRAM, Flash, SONOS;<br />

nanocrystal memories; single and few electron memories; 3D IC stacks; integrated MEMS and<br />

NEMS; integration of detectors, sensors, and actuators; CCDs and CMOS imagers; optical onchip<br />

communication, optical links; display technologies; TFTs; IC cooling techniques; SoC and<br />

SiP packaging; microsystem packaging.<br />

Emerging Technologies, Sensors & Actuators<br />

Nanotubes; single-electron, molecular and quantum devices; spintronics; self-assembling<br />

structures and emerging materials; photonic devices; light emission, APDs, single photon detectors;<br />

polymer transistors, sensors, light-emitting diodes and optoelectronic devices; flexible<br />

displays; biochemical sensors and actuators; microfluidic devices; micromachining; MEMS and<br />

NEMS.<br />

Joint <strong>ESSDERC</strong>/ESSCIRC Sessions on:<br />

Sensors and Imagers<br />

Technology; mixed signal design; algorithms.<br />

Yield and Reliability<br />

Yield and reliability related technology development, characterization, and modeling; design<br />

for manufacturability.<br />

<strong>ESSDERC</strong> and ESSCIRC will share Plenary Sessions where distinguished invited speakers will<br />

discuss issues of interest for the attendees of both conferences.<br />

A. DeHon (University of Pennsylvania)<br />

Nanoelectronic Architectures<br />

P. Fromherz (MPI for Biochemistry)<br />

Joining Microelectronics with Microionics: Nerve Cells and Brain Tissue on<br />

Semiconductor Chips<br />

K. Ishimaru (Toshiba)<br />

45/32 nm CMOS<br />

S. Nassif (IBM)<br />

Holistic Coupling of Manufacturing and Design<br />

A. Theuwissen (DALSA)<br />

CMOS Imagers – Status, Trends, and Future Perspectives<br />

W. Ziebart (Infineon Technologies)<br />

Technical and Economical Trends in Microelectronics<br />

<strong>ESSDERC</strong> PLENARY TALKS<br />

In addition, there will be renowned <strong>ESSDERC</strong> invited speakers who will address issues more focussed<br />

on solid-state devices of specific interest for the integrated circuit design community.<br />

K. Kim (Samsung)<br />

Advanced Memory Technologies<br />

D. de Leeuw (Philips Research)<br />

Molecular Devices: From Ideas to Experimental Evidence<br />

E. Sangiorgi (University of Bologna)<br />

Modeling Transport in Decananometer MOSFETs<br />

TUTORIALS AND WORKSHOPS<br />

A Tutorial Day will be organized on Monday, September 10 th , <strong>2007</strong>, while a Workshop Day will<br />

take place on Friday, September 14 th , <strong>2007</strong>.<br />

BEST PAPER AWARDS<br />

Papers presented at the conference will be considered for the Best Paper Award and for the<br />

best „Young Scientist“ Paper Award. The selection will be based on the results of the paper<br />

selection process and the judgment of the conference participants. The award delivery will take<br />

place at <strong>ESSDERC</strong> 2008.<br />

The <strong>2007</strong> <strong>ESSDERC</strong> conference will allow only electronic submission of papers in PDF<br />

format. Prospective authors must submit their paper(s) via the conference website.<br />

Papers must be submitted in the final format to be published in the proceedings. They must<br />

not exceed four A4 pages with all illustrations and references included. The size of the PDF<br />

files submitted must not exceed 2 MBytes. Manuscript guidelines as well as instructions on<br />

how to submit electronically will be available on the conference website.<br />

Conference Website<br />

http://www.essderc<strong>2007</strong>.org<br />

All paper submissions must be received by April 7 th , <strong>2007</strong>.<br />

After selection of papers, the authors will be informed about the decision of the Technical<br />

Program Committee by e-mail at the end of May <strong>2007</strong>. At the same time, the complete<br />

program will be published on the conference website.<br />

The working language of the conference is English, which must also be used for all presentations<br />

and printed material.<br />

REVIEW PROCESS<br />

Papers submitted for review must clearly state:<br />

• The purpose of the work<br />

• How and to what extent it advances the state-of-the-art<br />

• Specific results and their impact<br />

The degree to which the paper deals with the above issues is fundamental to a successful<br />

review and selection of the paper. The most frequent cause of rejections of submitted<br />

papers is a lack of new results. Only work that has not been previously published at the time<br />

of the conference will be considered. Submission of a paper for review and subsequent acceptance<br />

is considered by the committee as a commitment that the work will not be placed<br />

in the public domain prior to the conference.<br />

<strong>ESSDERC</strong> / ESSCIRC STEERING COMMITTEE<br />

Giorgio Baccarani (Chair) University of Bologna<br />

Reinout Woltjer (Vice-Chair) NXP<br />

Ralf Brederlow Texas Instruments<br />

Cor Claeys (permanent secretary) IMEC<br />

Peter Ashburn University of Southampton<br />

Sorin Cristoloveanu ENSERG-IMEP<br />

Franz Dielacher Infineon<br />

Christian Enz CSEM<br />

Hervé Mingam ST Microelectronics<br />

Ernesto Perea ST Microelectronics<br />

Hans-Jörg Pfleiderer University of Ulm<br />

William Redman-White Philips Semiconductor<br />

Hannu Tenhunen KTH Stockholm

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!