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High-Speed Digital CMOS Circuits<br />

73255<br />

Summer Term 2012<br />

Monday 8:00 – 9:30<br />

N5325<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

1<br />

Technische Universität München Sumer Term 2012<br />

henzler@tum.de<br />

2<br />

Lecturer CV<br />

Stephan Henzler received the Dipl.-Ing. degree in<br />

electrical engineering in 2002, the Dr.-Ing. degree in 2006,<br />

and the habilitation 1 degree in 2010 from the Technische<br />

Universität München (<strong>TUM</strong>), Germany. From 2002 to<br />

2005, he was with the Institute for Technical Electronics,<br />

Technische Universität München, where he worked on<br />

low-power digital integrated circuit design and leakage<br />

reduction techniques. For his dissertation on power<br />

management and leakage reduction techniques he<br />

received the Rhode-und-Schwarz outstanding thesis<br />

award 2007. In 2005, he joined the Advanced Systems<br />

and Circuits Department of Infineon Technologies AG,<br />

Munich, where he worked on high-speed/highperformance<br />

digital integrated circuits, variability in deepsubmicron<br />

CMOS technologies, and mixed-signal circuit<br />

design in nanometer CMOS technologies, especially timeto-digital<br />

converters. In 2010 he joined the wireless mixedsignal<br />

department of Infineon where he works on mixedsignal<br />

system and circuit design. Since February 2011 he<br />

carries on the same responsibilities within Intel.<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Administratives<br />

Lecture: Stephan Henzler<br />

henzler@tum.de<br />

office hours by arrangement<br />

Nasim Pour Aryan (teaching assistant)<br />

n.aryan@tum.de<br />

Tutorials: embedded in lecture<br />

Exam: in written form, 60 minutes, after lecture cycle<br />

Language: english<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

3<br />

Technische Universität München Sumer Term 2012<br />

1


Exam Schedule<br />

Suggested dates for the High-Speed Digital CMOS Circuits exam<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

4<br />

Technische Universität München Sumer Term 2012<br />

Course and Online Material<br />

Handout with extended slides:<br />

– available for download prior to lecture<br />

Online material comprising<br />

– extended slides (1 per page and 3 per page)<br />

– video stream of past lectures<br />

www.lte.ei.tum.de/homes/henzler<br />

High-Speed Digital CMOS Circuits<br />

5<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Course Overview<br />

Logic families for high-speed and high-performance<br />

Register (flip-flop) design<br />

Clock generation and distribution<br />

– Phase/Delay Locked Loop<br />

– Frequency dividers<br />

Time-to-digital converters<br />

Arithmetic algorithms and macros for fast adders,<br />

multipliers, etc.<br />

Memory design<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

6<br />

Technische Universität München Sumer Term 2012<br />

2


Literature<br />

Outline<br />

CMOS delay models<br />

– Elmore delay<br />

– Delay Minimization in buffer chain<br />

– Delay minimization of combinatorial logic<br />

Logical Effort methodology<br />

Static CMOS logic – Design considerations<br />

Dynamic Logic<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

7<br />

Technische Universität München Sumer Term 2012<br />

Course Books:<br />

Recommended Literature I<br />

Rabaey, Chanddrakasan, Nikolic.<br />

Digital Integrated Circuits, A Design Perspective<br />

Weste, Harris.<br />

CMOS VLSI Design, A Circuits and System Perspective<br />

Kaeslin,<br />

Digital Integrated Circuit Design<br />

Ken, Martin.<br />

Digital Integrated Circuit Design<br />

Bernstein, Carrig, Durham, Hansen, Hogenmiller, Nowak, Rohrer.<br />

High Speed CMOS Design Styles<br />

High-Speed Digital CMOS Circuits<br />

8<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Phase-Locked Loops<br />

Razavi.<br />

RF-Microelectronics<br />

Recommended Literature II<br />

Time-to-Digital Converters:<br />

Henzler.<br />

Time-to-Digital Converters<br />

Arithmetic Circuits:<br />

Ercegovac, Lang.<br />

Digital Arithmetic<br />

Parhami.<br />

Computer Arithmetic, Algorithms and Hardware Design<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

9<br />

Technische Universität München Sumer Term 2012<br />

3


Memory Circuits:<br />

Haraszi.<br />

CMOS Memory Circuits<br />

Recommended Literature III<br />

Low-Power:<br />

Henzler.<br />

Power Management of Digital Circuits in Deep Sub-Micron<br />

CMOS Technologies<br />

Latest material for all chapters:<br />

IEEE Xplore with <strong>TUM</strong> full library access<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

10<br />

Technische Universität München Sumer Term 2012<br />

High-Speed Circuits<br />

Very high frequency, i.e. several GHz<br />

Considerable part of clock period consumed for<br />

synchronization, e.g. flip-flop delay t cpq, setup time t setup, and<br />

clock skew plus jitter t skew<br />

Limited time for logic only simple operations per cycle or<br />

pipeline stage, respectively<br />

Be aware of hold time violations!<br />

High-Speed Digital CMOS Circuits<br />

11<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

High-Performance Circuits<br />

Moderate frequency, i.e. 300MHz – 2GHz<br />

Predominant part of clock period consumed for logic<br />

operations, small synchronization overhead<br />

Powerful operations possible within a single cycle/stage<br />

Despite long cycle time the timing is critical due to the long<br />

combinatorial paths between two flip-flop stages<br />

Be aware of setup time violations!<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

12<br />

Technische Universität München Sumer Term 2012<br />

4


Logic Design for High-Performance<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

13<br />

Technische Universität München Sumer Term 2012<br />

Static CMOS Logic<br />

Complementary pull-up and pulldown<br />

network:<br />

NMOS PMOS<br />

serial parallel connection<br />

Always low resistive connection to<br />

power supply (VDD or VSS)<br />

– full swing signals<br />

– noise and leakage tolerant<br />

– strong supply dependence of delay<br />

Inputs connected to n PMOS and n<br />

NMOS devices<br />

– input load ∝ 2n (large)<br />

– large internal load connected to output<br />

High-Speed Digital CMOS Circuits<br />

14<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Static CMOS Logic 2<br />

Handover between pull-up and pulldown<br />

during switching<br />

– cross current<br />

– medium speed<br />

– not ratioed<br />

Activity dependent power<br />

consumption<br />

Excellent modeling and EDA<br />

integration available<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

15<br />

Technische Universität München Sumer Term 2012<br />

5


Literature<br />

Outline<br />

CMOS delay models<br />

– Elmore delay<br />

– Delay Minimization in buffer chain<br />

– Delay minimization of combinatorial logic<br />

Logical Effort methodology<br />

Static CMOS logic – Design considerations<br />

Dynamic Logic<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

16<br />

Technische Universität München Sumer Term 2012<br />

Elmore Delay<br />

Prerequisites:<br />

– one input only<br />

– caps between network node and ground<br />

– no resistive loops<br />

W. C. Elmore, The Transient Response of Damped Linear Networks with Particular Regard to Wideband Amplifiers, Journal of Applied Physics, 1948.<br />

High-Speed Digital CMOS Circuits<br />

17<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Elmore Delay (cont)<br />

There is exactly one path from a network node i to the input s.<br />

The sum of all resistances along this path is the path resistance<br />

R ii, e.g. R 44 = R 4 + R 3 + R 1.<br />

W. C. Elmore, The Transient Response of Damped Linear Networks with Particular Regard to Wideband Amplifiers, Journal of Applied Physics, 1948.<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

18<br />

Technische Universität München Sumer Term 2012<br />

6


Elmore Delay (cont)<br />

The shared path resistance R ik is the sum of all resistances<br />

along the joint sub-path of the two paths s i and s k.<br />

Example: R i4 = R 1 + R 3<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

19<br />

Technische Universität München Sumer Term 2012<br />

Elmore delay:<br />

Elmore Delay (cont)<br />

First order approximation of the delay after which a voltage<br />

step at the input s can be observed at the output i.<br />

High-Speed Digital CMOS Circuits<br />

20<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Elmore delay:<br />

Elmore Delay (cont)<br />

quite useful for<br />

– wire delay estimation<br />

– first order delay model of static and dynamic CMOS gates<br />

(RC model)<br />

(actually a transistor is not a resistor, excellent for qualitative understanding)<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

21<br />

Technische Universität München Sumer Term 2012<br />

7


Load Dependence of Inverter<br />

electrical effort, effort<br />

fanout, (gain, fan-out) gain<br />

Linear load-delay dependence holds<br />

fairly good, even in deep sub-micron<br />

technologies.<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

22<br />

Technische Universität München Sumer Term 2012<br />

Sizing of Super Buffer<br />

min. sized N - 1 unknown sizings<br />

Find inverter dimensions for minimum propagation delay.<br />

C 1 and C L given N-1 variables<br />

path electrical effort<br />

High-Speed Digital CMOS Circuits<br />

23<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Sizing of Super Buffer 2<br />

Minimize delay (i.e. search for optimum fanout h i):<br />

for optimum delay all fanouts need to be the same,<br />

i.e. h 1 = h 2 = h 3 = … = h N<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

24<br />

Technische Universität München Sumer Term 2012<br />

8


Sizing of Super Buffer 3<br />

The product of all fanouts is constant and given by the<br />

constraints, i.e. C 1 and C L:<br />

Minimum delay of an N-stage inverter chain (superbuffer):<br />

However, what is the optimum number of stages<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

25<br />

Technische Universität München Sumer Term 2012<br />

Sizing of Super Buffer 4<br />

Find optimum number of stages:<br />

normalized delay<br />

100<br />

80<br />

60<br />

40<br />

20<br />

(implicit equation for h i)<br />

H=50<br />

H=100<br />

H=200<br />

0<br />

0 1 2 3<br />

number of stages<br />

4 5 6<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

Technische Universität München<br />

* Sometimes an optimal fan-out of e is reported .<br />

This follows from a similar derivation if the parasitic<br />

delay of the gate is neglected.<br />

26<br />

Sumer Term 2012<br />

Sizing of Combinatorial Logic<br />

Buffer chain is mainly an academic exercise.<br />

How can we size combinatorial logic for minimum delay?<br />

How many stages shall we use to realize a certain function?<br />

Logical Effort Methodology<br />

(a generalization of the preceding investigation)<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

27<br />

Technische Universität München Sumer Term 2012<br />

9


Delay of Combinatorial Gate<br />

effort delay<br />

p parasitic delay, depends on logic, not sizing or load<br />

h electrical effort, depends on sizing and load not on log. func.<br />

g logical effort, depends on logic, not sizing<br />

Two equivalent definitions of logical effort g:<br />

gate capacitance<br />

1. gate cap. of ref. inverter when the gate is sized to deliver<br />

the same current than the reference inverter<br />

2. g describes how much worse the gate can deliver current to the load<br />

compared to an inverter when the gate is sized to provide the same<br />

input capacitance as the inverter.<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

28<br />

Technische Universität München Sumer Term 2012<br />

Calculation of Logical Effort<br />

p = 2, g =4/3<br />

High-Speed Digital CMOS Circuits<br />

29<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Calculation of Logical Effort<br />

p = 7/3, g A = 2, g B = 2, g C = 5/3<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

30<br />

Technische Universität München Sumer Term 2012<br />

10


Delay of High Fanin Gates<br />

Parasitic delay and logical effort of NAND gate<br />

(according to basic estimation of previous slides)<br />

inputs 2 3 4 5 6 8 n<br />

parasitic delay 2 3 4 5 6 8 n<br />

logical effort 4/3 5/3 2 7/3 8/3 10/3 (n+2)/3<br />

In reality parasitic delay increases nearly quadratically due to<br />

intermediate capacitances.<br />

Use Elmore delay or simulation for accurate parameter<br />

extraction. Linear delay model still quite good.<br />

p N = 1<br />

3<br />

<br />

N 2 + N <br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

31<br />

Technische Universität München Sumer Term 2012<br />

Delay of Combinatorial Paths<br />

The branching in combinatorial blocks increases the electrical<br />

effort by the branching effort b<br />

branching effort<br />

High-Speed Digital CMOS Circuits<br />

32<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Delay of Combinatorial Path 2<br />

determine optimum sizing in the same way than for buffers<br />

<br />

Define path effort:<br />

minimum delay can be estimated<br />

before sizing process is started!<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

33<br />

Technische Universität München Sumer Term 2012<br />

11


Unequal Rising and Falling Delay<br />

Equal rise and fall delay is often disadvantageous for<br />

average delay (path delay is relevant for applications) and<br />

area consumption.<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

34<br />

Technische Universität München Sumer Term 2012<br />

Add-On Material<br />

Unequal Rising and Falling Delay<br />

Logical effort methodology can be extended for independent<br />

rising and falling delays.<br />

Averaging along path, e.g. the sum of a slow pull-up and a<br />

fast pull-down can be smaller than two times a symmetrical<br />

delay same calculation with average delay<br />

optimum P/N ratio r:<br />

High-Speed Digital CMOS Circuits<br />

35<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Limitations of Logical Effort<br />

Logical effort methodology does …<br />

– Valuable rule of thumb for sizing of high performance paths<br />

– Predicts the optimum path delay /wo knowledge of sizing<br />

– Indicates how to distribute the gain along a critical path<br />

Logical effort methodology does not …<br />

– Take the slope dependence of gate delays into account<br />

(however, along the critical path slopes are very similar)<br />

– Consider simultaneous switching<br />

– Consider power, i.e. gives no sizing rule for sub-critical paths<br />

– Indicate how to size a path for small power and/or area<br />

– Interconnect delay<br />

– Branching is difficult to estimate, especially for parallel critical paths<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

36<br />

Technische Universität München Sumer Term 2012<br />

12


Non-Linear Delay Model<br />

Linear delay model is suited very well for hand calculation<br />

and intuitive understanding how to size gates<br />

Linear delay model is not suited for high numerical accuracy<br />

Non-linear delay model for computer calculation<br />

– Define a set or relevant input slopes (transition times)<br />

– Define a set of relevant load capacitances<br />

– Perform SPICE simulation for each (load,slope) tupel<br />

– Measure propagation delay and output slope (transition time)<br />

and store results in 2-dimensional lookup table<br />

– Usually stored in the so called liberty-file<br />

Numerically accurate<br />

Not useful to understand trade-offs / derive design strategies<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

37<br />

Technische Universität München Sumer Term 2012<br />

Example for Timing Description in LIB File<br />

pin(Z) {<br />

…<br />

timing() {<br />

related_pin : “X1”;<br />

timing () {<br />

cell_fall(slp_load) {<br />

index_1 (“0.010, 0.050”); (slope)<br />

index_2 (“0, 10, 50”); (load)<br />

values( “50, 150, 550”\<br />

“60, 170, 610”);<br />

…<br />

Description tables like this are done for any timing figure, i.e.<br />

– delay from any input in both switching directions to the output<br />

– slope at the output in response to a switching event at any input<br />

– setup & hold times<br />

– …<br />

High-Speed Digital CMOS Circuits<br />

38<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Literature<br />

Outline<br />

CMOS delay models<br />

– Elmore delay<br />

– Delay Minimization in buffer chain<br />

– Delay minimization of combinatorial logic<br />

Logical Effort methodology<br />

Static CMOS logic – Design considerations<br />

Dynamic CMOS Logic<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

39<br />

Technische Universität München Sumer Term 2012<br />

13


Input Dependence of Gate Delay<br />

simultaneous switching of inputs is worst case<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

40<br />

Technische Universität München Sumer Term 2012<br />

Equalization of Gate Delay<br />

Layout is more complex, i.e. cell area is larger<br />

– makes only sense if functionality requires equal propagation delay<br />

High-Speed Digital CMOS Circuits<br />

41<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Asymmetric Gates<br />

speed requirements of<br />

one input relaxed<br />

– downsizing of slow<br />

branch<br />

– upsizing of low active<br />

series devices<br />

p Ad = 13/9, p Au = 13/9<br />

p Bd = 17/9, p Bu = 26/9<br />

g Ad = 10/9, g Au = 10/9<br />

g Bd = 5/3, g Bu = 10/3<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

42<br />

Technische Universität München Sumer Term 2012<br />

14


Skewed Gates<br />

If one transition is much more critical than the other one the<br />

critical transition can be accelerated at the cost of the other one<br />

unskewed<br />

p = 1, g = 1<br />

skewed<br />

p u = 5/6, p d = 5/3, g u = 5/6, g d = 5/3<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

43<br />

Technische Universität München Sumer Term 2012<br />

Dynamic Logic<br />

(Precharge Logic)<br />

High-Speed Digital CMOS Circuits<br />

44<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Low input & parasitic caps.<br />

No contention<br />

No static power consumption<br />

Extremely fast<br />

Wide NOR structures e.g. for<br />

decoders<br />

Dynamic Logic<br />

Sensitive to noise and leakage<br />

High dynamic power consumption<br />

Clocking required<br />

Monotonicity requirement<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

45<br />

Technische Universität München Sumer Term 2012<br />

15


High Fanin Dynamic Gates<br />

Wide NOR Structures<br />

NOR operation is for free in single<br />

ended domino gate<br />

Wide OR structures cause significant<br />

leakage currents degrading the charge<br />

on the dynamic node keeper<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

46<br />

Technische Universität München Sumer Term 2012<br />

Alternative for Wide NOR: Pseudo NMOS<br />

Cross current, acceptable e.g. if pulldown<br />

is exception or for high-speed<br />

applications<br />

Reduced swing (tradeoff between pullup<br />

speed and level reduction<br />

ratioed<br />

High-Speed Digital CMOS Circuits<br />

47<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

High Fanin Dynamic Gates<br />

Long NAND Structures<br />

No contention<br />

Low load<br />

long NMOS pull-down chain possible<br />

but charge sharing is critical<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

48<br />

Technische Universität München Sumer Term 2012<br />

16


Evolution of Power Consumption<br />

Sakurai, ISSCC 03<br />

Leakage currents<br />

became a significant<br />

component of power<br />

dissipation.<br />

Fortunately it is not thus<br />

serious<br />

Technology innovation<br />

can only decelerate this<br />

trend.<br />

Circuit innovation (sleep<br />

transistor scheme)<br />

reduces leakage in idle<br />

modules<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

49<br />

Technische Universität München Sumer Term 2012<br />

Leakage Currents in Deep Sub-Micron MOSFETs:<br />

Classic Leakage Currents<br />

gate<br />

source drain<br />

1<br />

2<br />

Subthreshold current<br />

Junction leakage<br />

1<br />

bulk<br />

High-Speed Digital CMOS Circuits<br />

50<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Subthreshold Leakage<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

51<br />

Technische Universität München Sumer Term 2012<br />

2<br />

17


Leakage Currents in Deep Sub-Micron MOSFETs:<br />

Tunneling Currents<br />

gate<br />

source drain<br />

1<br />

2<br />

1<br />

bulk<br />

Gate tunneling current<br />

Gate induced drain leakage<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

52<br />

Technische Universität München Sumer Term 2012<br />

Noise and Leakage Sensitivity<br />

High-Speed Digital CMOS Circuits<br />

53<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

2<br />

Leakage currents discharge<br />

dynamic node<br />

limited retention time<br />

minimum operation frequency<br />

(very disadvantageous for<br />

production test or low speed<br />

operation modes)<br />

Noise on power and signal wires<br />

opens pull-down paths weakly<br />

erroneous discharge of<br />

dynamic node<br />

Reduction of Noise & Leakage Sensitivity<br />

Weak keeper device compensates for leakage and noise<br />

induced discharge currents<br />

Size keeper for approximately 10% of discharge current<br />

5-10 % speed degradation<br />

No inversion<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

54<br />

Technische Universität München Sumer Term 2012<br />

18


good device<br />

properties but<br />

large current<br />

Designing Weak Keepers<br />

weak keeper small W / L – ratio small W, large L?<br />

small current<br />

but strongly<br />

sensitive to<br />

variations<br />

small current<br />

but modeling of<br />

length dependence<br />

is difficult<br />

good keeper<br />

device<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

55<br />

Technische Universität München Sumer Term 2012<br />

good keeper device but<br />

large output loading<br />

Design of Weak Keepers 2<br />

good keeper with reduced<br />

output loading<br />

High-Speed Digital CMOS Circuits<br />

56<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Adaptive Keepers<br />

With increasing process variations<br />

keeper design becomes difficult<br />

slow NMOS & fast PMOS:<br />

– keeper too strong<br />

– significant speed degradation<br />

fast NMOS & slow PMOS:<br />

– high leakage in pull-down path<br />

but small compensation current<br />

keeper too weak<br />

– erroneous discharge<br />

Steven Hsu, Intel, ISSCC 2006<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

57<br />

Technische Universität München Sumer Term 2012<br />

19


Delayed Keeper<br />

Increasing leakage calls for stronger keepers<br />

delay penalty, advantage of dynamic circuits vanishes<br />

Concept:<br />

– Use small keeper which cannot compensate leakage completely<br />

– Enable strong keeper after evaluation/discharge is completed<br />

Challenge: Size permanent and delayed keeper such that<br />

leakage currents do not compromise logical decision<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

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Technische Universität München Sumer Term 2012<br />

Charge Sharing in Dynamic Gates<br />

Charge sharing between<br />

cap of pre-charged node<br />

and intrinsic caps<br />

Eventually undefined<br />

levels and disturbance of<br />

subsequent stages<br />

Might be recovered by keeper<br />

Can be easily overlooked in simulation<br />

think about worst case situation<br />

Remedy: Precharge internal nodes with<br />

weak transistors<br />

High-Speed Digital CMOS Circuits<br />

59<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Multi-Output Dynamic Logic<br />

Domino gates can produce multiple logic functions (with<br />

common subterms) simultaneously<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

60<br />

Technische Universität München Sumer Term 2012<br />

20


Compound Domino Logic<br />

Coupling inverters can be substituted by any static gate to<br />

reduce number of logic stages<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

61<br />

Technische Universität München Sumer Term 2012<br />

Conditional Keeper<br />

Strongly low skewed<br />

CMOS gates with precharge<br />

Reduced contention<br />

No latching<br />

Also known as skewed<br />

CMOS<br />

High-Speed Digital CMOS Circuits<br />

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Technische Universität München Sumer Term 2012<br />

Clocking of Single-Rail Domino Circuits<br />

Sequential activation of logic stages<br />

High noise sensitivity<br />

High speed optimized clock skews variation sensitive<br />

Circuit becomes somehow “analog”<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

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Technische Universität München Sumer Term 2012<br />

21


Clocking of Single-Rail Domino Circuits 2<br />

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Technische Universität München Sumer Term 2012<br />

Clocking of Single-Rail Domino Circuits 3<br />

Self timed evaluation (domino principle)<br />

Simultaneous pre-charge / evaluation<br />

Bypassing of stages possible<br />

High-Speed Digital CMOS Circuits<br />

65<br />

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Technische Universität München Sumer Term 2012<br />

Clocking of Single-Rail Domino Circuits 4<br />

High-Speed Digital CMOS Circuits<br />

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22


Clocking of Footer-Less Domino Circuits<br />

No footer speed & power improvement<br />

Self timed<br />

Sequential pre-charge to avoid cross currents<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

67<br />

Technische Universität München Sumer Term 2012<br />

Clocking of Footer-Less Domino Circuits 2<br />

High-Speed Digital CMOS Circuits<br />

68<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

NORAce Domino Logic<br />

Alternating NMOS / PMOS Domino Gates<br />

pre-charged state disables all evaluation paths<br />

Self timed<br />

Noise sensitive<br />

No direct bypassing<br />

High-Speed Digital CMOS Circuits<br />

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23


NORAce Domino Logic 2<br />

High-Speed Digital CMOS Circuits<br />

Stephan Henzler<br />

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Technische Universität München Sumer Term 2012<br />

Cross Coupled Domino<br />

– A Dynamic Dual Rail Family –<br />

No contention<br />

Improved robustness<br />

Implicit inversion<br />

Higher clock load<br />

Complex wiring<br />

No wide NOR structures<br />

High-Speed Digital CMOS Circuits<br />

71<br />

Stephan Henzler<br />

Technische Universität München Sumer Term 2012<br />

Is it a good idea to use dynamic logic?<br />

Well, it‘s fancy<br />

Performance advantage vanishes in DSM technologies<br />

Many design pitfalls, e.g. charge sharing, leakage, noise<br />

Very susceptible to parasitics, PVT, etc.<br />

Weak EDA support, e.g. timing verification,<br />

poor verification<br />

Conclusion<br />

– Dynamic logic is a risk – Say No-No!<br />

– Dynamic logic is often the reason for redesigns<br />

– Avoid whenever possible<br />

– If you think its required, first seek for architectural loopholes,<br />

e.g. logic optimization, pipelining, parallelization …<br />

If you find no other way do it, but very carefully!<br />

High-Speed Digital CMOS Circuits<br />

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Technische Universität München Sumer Term 2012<br />

24


This is a industry wide<br />

consensus and trend<br />

Industrie‘s Oppineon<br />

High-Speed Digital CMOS Circuits<br />

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Legal Notice<br />

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