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High-Speed Digital CMOS Circuits<br />
73255<br />
Summer Term 2012<br />
Monday 8:00 – 9:30<br />
N5325<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
1<br />
Technische Universität München Sumer Term 2012<br />
henzler@tum.de<br />
2<br />
Lecturer CV<br />
Stephan Henzler received the Dipl.-Ing. degree in<br />
electrical engineering in 2002, the Dr.-Ing. degree in 2006,<br />
and the habilitation 1 degree in 2010 from the Technische<br />
Universität München (<strong>TUM</strong>), Germany. From 2002 to<br />
2005, he was with the Institute for Technical Electronics,<br />
Technische Universität München, where he worked on<br />
low-power digital integrated circuit design and leakage<br />
reduction techniques. For his dissertation on power<br />
management and leakage reduction techniques he<br />
received the Rhode-und-Schwarz outstanding thesis<br />
award 2007. In 2005, he joined the Advanced Systems<br />
and Circuits Department of Infineon Technologies AG,<br />
Munich, where he worked on high-speed/highperformance<br />
digital integrated circuits, variability in deepsubmicron<br />
CMOS technologies, and mixed-signal circuit<br />
design in nanometer CMOS technologies, especially timeto-digital<br />
converters. In 2010 he joined the wireless mixedsignal<br />
department of Infineon where he works on mixedsignal<br />
system and circuit design. Since February 2011 he<br />
carries on the same responsibilities within Intel.<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Administratives<br />
Lecture: Stephan Henzler<br />
henzler@tum.de<br />
office hours by arrangement<br />
Nasim Pour Aryan (teaching assistant)<br />
n.aryan@tum.de<br />
Tutorials: embedded in lecture<br />
Exam: in written form, 60 minutes, after lecture cycle<br />
Language: english<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
3<br />
Technische Universität München Sumer Term 2012<br />
1
Exam Schedule<br />
Suggested dates for the High-Speed Digital CMOS Circuits exam<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
4<br />
Technische Universität München Sumer Term 2012<br />
Course and Online Material<br />
Handout with extended slides:<br />
– available for download prior to lecture<br />
Online material comprising<br />
– extended slides (1 per page and 3 per page)<br />
– video stream of past lectures<br />
www.lte.ei.tum.de/homes/henzler<br />
High-Speed Digital CMOS Circuits<br />
5<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Course Overview<br />
Logic families for high-speed and high-performance<br />
Register (flip-flop) design<br />
Clock generation and distribution<br />
– Phase/Delay Locked Loop<br />
– Frequency dividers<br />
Time-to-digital converters<br />
Arithmetic algorithms and macros for fast adders,<br />
multipliers, etc.<br />
Memory design<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
6<br />
Technische Universität München Sumer Term 2012<br />
2
Literature<br />
Outline<br />
CMOS delay models<br />
– Elmore delay<br />
– Delay Minimization in buffer chain<br />
– Delay minimization of combinatorial logic<br />
Logical Effort methodology<br />
Static CMOS logic – Design considerations<br />
Dynamic Logic<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
7<br />
Technische Universität München Sumer Term 2012<br />
Course Books:<br />
Recommended Literature I<br />
Rabaey, Chanddrakasan, Nikolic.<br />
Digital Integrated Circuits, A Design Perspective<br />
Weste, Harris.<br />
CMOS VLSI Design, A Circuits and System Perspective<br />
Kaeslin,<br />
Digital Integrated Circuit Design<br />
Ken, Martin.<br />
Digital Integrated Circuit Design<br />
Bernstein, Carrig, Durham, Hansen, Hogenmiller, Nowak, Rohrer.<br />
High Speed CMOS Design Styles<br />
High-Speed Digital CMOS Circuits<br />
8<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Phase-Locked Loops<br />
Razavi.<br />
RF-Microelectronics<br />
Recommended Literature II<br />
Time-to-Digital Converters:<br />
Henzler.<br />
Time-to-Digital Converters<br />
Arithmetic Circuits:<br />
Ercegovac, Lang.<br />
Digital Arithmetic<br />
Parhami.<br />
Computer Arithmetic, Algorithms and Hardware Design<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
9<br />
Technische Universität München Sumer Term 2012<br />
3
Memory Circuits:<br />
Haraszi.<br />
CMOS Memory Circuits<br />
Recommended Literature III<br />
Low-Power:<br />
Henzler.<br />
Power Management of Digital Circuits in Deep Sub-Micron<br />
CMOS Technologies<br />
Latest material for all chapters:<br />
IEEE Xplore with <strong>TUM</strong> full library access<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
10<br />
Technische Universität München Sumer Term 2012<br />
High-Speed Circuits<br />
Very high frequency, i.e. several GHz<br />
Considerable part of clock period consumed for<br />
synchronization, e.g. flip-flop delay t cpq, setup time t setup, and<br />
clock skew plus jitter t skew<br />
Limited time for logic only simple operations per cycle or<br />
pipeline stage, respectively<br />
Be aware of hold time violations!<br />
High-Speed Digital CMOS Circuits<br />
11<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
High-Performance Circuits<br />
Moderate frequency, i.e. 300MHz – 2GHz<br />
Predominant part of clock period consumed for logic<br />
operations, small synchronization overhead<br />
Powerful operations possible within a single cycle/stage<br />
Despite long cycle time the timing is critical due to the long<br />
combinatorial paths between two flip-flop stages<br />
Be aware of setup time violations!<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
12<br />
Technische Universität München Sumer Term 2012<br />
4
Logic Design for High-Performance<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
13<br />
Technische Universität München Sumer Term 2012<br />
Static CMOS Logic<br />
Complementary pull-up and pulldown<br />
network:<br />
NMOS PMOS<br />
serial parallel connection<br />
Always low resistive connection to<br />
power supply (VDD or VSS)<br />
– full swing signals<br />
– noise and leakage tolerant<br />
– strong supply dependence of delay<br />
Inputs connected to n PMOS and n<br />
NMOS devices<br />
– input load ∝ 2n (large)<br />
– large internal load connected to output<br />
High-Speed Digital CMOS Circuits<br />
14<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Static CMOS Logic 2<br />
Handover between pull-up and pulldown<br />
during switching<br />
– cross current<br />
– medium speed<br />
– not ratioed<br />
Activity dependent power<br />
consumption<br />
Excellent modeling and EDA<br />
integration available<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
15<br />
Technische Universität München Sumer Term 2012<br />
5
Literature<br />
Outline<br />
CMOS delay models<br />
– Elmore delay<br />
– Delay Minimization in buffer chain<br />
– Delay minimization of combinatorial logic<br />
Logical Effort methodology<br />
Static CMOS logic – Design considerations<br />
Dynamic Logic<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
16<br />
Technische Universität München Sumer Term 2012<br />
Elmore Delay<br />
Prerequisites:<br />
– one input only<br />
– caps between network node and ground<br />
– no resistive loops<br />
W. C. Elmore, The Transient Response of Damped Linear Networks with Particular Regard to Wideband Amplifiers, Journal of Applied Physics, 1948.<br />
High-Speed Digital CMOS Circuits<br />
17<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Elmore Delay (cont)<br />
There is exactly one path from a network node i to the input s.<br />
The sum of all resistances along this path is the path resistance<br />
R ii, e.g. R 44 = R 4 + R 3 + R 1.<br />
W. C. Elmore, The Transient Response of Damped Linear Networks with Particular Regard to Wideband Amplifiers, Journal of Applied Physics, 1948.<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
18<br />
Technische Universität München Sumer Term 2012<br />
6
Elmore Delay (cont)<br />
The shared path resistance R ik is the sum of all resistances<br />
along the joint sub-path of the two paths s i and s k.<br />
Example: R i4 = R 1 + R 3<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
19<br />
Technische Universität München Sumer Term 2012<br />
Elmore delay:<br />
Elmore Delay (cont)<br />
First order approximation of the delay after which a voltage<br />
step at the input s can be observed at the output i.<br />
High-Speed Digital CMOS Circuits<br />
20<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Elmore delay:<br />
Elmore Delay (cont)<br />
quite useful for<br />
– wire delay estimation<br />
– first order delay model of static and dynamic CMOS gates<br />
(RC model)<br />
(actually a transistor is not a resistor, excellent for qualitative understanding)<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
21<br />
Technische Universität München Sumer Term 2012<br />
7
Load Dependence of Inverter<br />
electrical effort, effort<br />
fanout, (gain, fan-out) gain<br />
Linear load-delay dependence holds<br />
fairly good, even in deep sub-micron<br />
technologies.<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
22<br />
Technische Universität München Sumer Term 2012<br />
Sizing of Super Buffer<br />
min. sized N - 1 unknown sizings<br />
Find inverter dimensions for minimum propagation delay.<br />
C 1 and C L given N-1 variables<br />
path electrical effort<br />
High-Speed Digital CMOS Circuits<br />
23<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Sizing of Super Buffer 2<br />
Minimize delay (i.e. search for optimum fanout h i):<br />
for optimum delay all fanouts need to be the same,<br />
i.e. h 1 = h 2 = h 3 = … = h N<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
24<br />
Technische Universität München Sumer Term 2012<br />
8
Sizing of Super Buffer 3<br />
The product of all fanouts is constant and given by the<br />
constraints, i.e. C 1 and C L:<br />
Minimum delay of an N-stage inverter chain (superbuffer):<br />
However, what is the optimum number of stages<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
25<br />
Technische Universität München Sumer Term 2012<br />
Sizing of Super Buffer 4<br />
Find optimum number of stages:<br />
normalized delay<br />
100<br />
80<br />
60<br />
40<br />
20<br />
(implicit equation for h i)<br />
H=50<br />
H=100<br />
H=200<br />
0<br />
0 1 2 3<br />
number of stages<br />
4 5 6<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
Technische Universität München<br />
* Sometimes an optimal fan-out of e is reported .<br />
This follows from a similar derivation if the parasitic<br />
delay of the gate is neglected.<br />
26<br />
Sumer Term 2012<br />
Sizing of Combinatorial Logic<br />
Buffer chain is mainly an academic exercise.<br />
How can we size combinatorial logic for minimum delay?<br />
How many stages shall we use to realize a certain function?<br />
Logical Effort Methodology<br />
(a generalization of the preceding investigation)<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
27<br />
Technische Universität München Sumer Term 2012<br />
9
Delay of Combinatorial Gate<br />
effort delay<br />
p parasitic delay, depends on logic, not sizing or load<br />
h electrical effort, depends on sizing and load not on log. func.<br />
g logical effort, depends on logic, not sizing<br />
Two equivalent definitions of logical effort g:<br />
gate capacitance<br />
1. gate cap. of ref. inverter when the gate is sized to deliver<br />
the same current than the reference inverter<br />
2. g describes how much worse the gate can deliver current to the load<br />
compared to an inverter when the gate is sized to provide the same<br />
input capacitance as the inverter.<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
28<br />
Technische Universität München Sumer Term 2012<br />
Calculation of Logical Effort<br />
p = 2, g =4/3<br />
High-Speed Digital CMOS Circuits<br />
29<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Calculation of Logical Effort<br />
p = 7/3, g A = 2, g B = 2, g C = 5/3<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
30<br />
Technische Universität München Sumer Term 2012<br />
10
Delay of High Fanin Gates<br />
Parasitic delay and logical effort of NAND gate<br />
(according to basic estimation of previous slides)<br />
inputs 2 3 4 5 6 8 n<br />
parasitic delay 2 3 4 5 6 8 n<br />
logical effort 4/3 5/3 2 7/3 8/3 10/3 (n+2)/3<br />
In reality parasitic delay increases nearly quadratically due to<br />
intermediate capacitances.<br />
Use Elmore delay or simulation for accurate parameter<br />
extraction. Linear delay model still quite good.<br />
p N = 1<br />
3<br />
<br />
N 2 + N <br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
31<br />
Technische Universität München Sumer Term 2012<br />
Delay of Combinatorial Paths<br />
The branching in combinatorial blocks increases the electrical<br />
effort by the branching effort b<br />
branching effort<br />
High-Speed Digital CMOS Circuits<br />
32<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Delay of Combinatorial Path 2<br />
determine optimum sizing in the same way than for buffers<br />
<br />
Define path effort:<br />
minimum delay can be estimated<br />
before sizing process is started!<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
33<br />
Technische Universität München Sumer Term 2012<br />
11
Unequal Rising and Falling Delay<br />
Equal rise and fall delay is often disadvantageous for<br />
average delay (path delay is relevant for applications) and<br />
area consumption.<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
34<br />
Technische Universität München Sumer Term 2012<br />
Add-On Material<br />
Unequal Rising and Falling Delay<br />
Logical effort methodology can be extended for independent<br />
rising and falling delays.<br />
Averaging along path, e.g. the sum of a slow pull-up and a<br />
fast pull-down can be smaller than two times a symmetrical<br />
delay same calculation with average delay<br />
optimum P/N ratio r:<br />
High-Speed Digital CMOS Circuits<br />
35<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Limitations of Logical Effort<br />
Logical effort methodology does …<br />
– Valuable rule of thumb for sizing of high performance paths<br />
– Predicts the optimum path delay /wo knowledge of sizing<br />
– Indicates how to distribute the gain along a critical path<br />
Logical effort methodology does not …<br />
– Take the slope dependence of gate delays into account<br />
(however, along the critical path slopes are very similar)<br />
– Consider simultaneous switching<br />
– Consider power, i.e. gives no sizing rule for sub-critical paths<br />
– Indicate how to size a path for small power and/or area<br />
– Interconnect delay<br />
– Branching is difficult to estimate, especially for parallel critical paths<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
36<br />
Technische Universität München Sumer Term 2012<br />
12
Non-Linear Delay Model<br />
Linear delay model is suited very well for hand calculation<br />
and intuitive understanding how to size gates<br />
Linear delay model is not suited for high numerical accuracy<br />
Non-linear delay model for computer calculation<br />
– Define a set or relevant input slopes (transition times)<br />
– Define a set of relevant load capacitances<br />
– Perform SPICE simulation for each (load,slope) tupel<br />
– Measure propagation delay and output slope (transition time)<br />
and store results in 2-dimensional lookup table<br />
– Usually stored in the so called liberty-file<br />
Numerically accurate<br />
Not useful to understand trade-offs / derive design strategies<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
37<br />
Technische Universität München Sumer Term 2012<br />
Example for Timing Description in LIB File<br />
pin(Z) {<br />
…<br />
timing() {<br />
related_pin : “X1”;<br />
timing () {<br />
cell_fall(slp_load) {<br />
index_1 (“0.010, 0.050”); (slope)<br />
index_2 (“0, 10, 50”); (load)<br />
values( “50, 150, 550”\<br />
“60, 170, 610”);<br />
…<br />
Description tables like this are done for any timing figure, i.e.<br />
– delay from any input in both switching directions to the output<br />
– slope at the output in response to a switching event at any input<br />
– setup & hold times<br />
– …<br />
High-Speed Digital CMOS Circuits<br />
38<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Literature<br />
Outline<br />
CMOS delay models<br />
– Elmore delay<br />
– Delay Minimization in buffer chain<br />
– Delay minimization of combinatorial logic<br />
Logical Effort methodology<br />
Static CMOS logic – Design considerations<br />
Dynamic CMOS Logic<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
39<br />
Technische Universität München Sumer Term 2012<br />
13
Input Dependence of Gate Delay<br />
simultaneous switching of inputs is worst case<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
40<br />
Technische Universität München Sumer Term 2012<br />
Equalization of Gate Delay<br />
Layout is more complex, i.e. cell area is larger<br />
– makes only sense if functionality requires equal propagation delay<br />
High-Speed Digital CMOS Circuits<br />
41<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Asymmetric Gates<br />
speed requirements of<br />
one input relaxed<br />
– downsizing of slow<br />
branch<br />
– upsizing of low active<br />
series devices<br />
p Ad = 13/9, p Au = 13/9<br />
p Bd = 17/9, p Bu = 26/9<br />
g Ad = 10/9, g Au = 10/9<br />
g Bd = 5/3, g Bu = 10/3<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
42<br />
Technische Universität München Sumer Term 2012<br />
14
Skewed Gates<br />
If one transition is much more critical than the other one the<br />
critical transition can be accelerated at the cost of the other one<br />
unskewed<br />
p = 1, g = 1<br />
skewed<br />
p u = 5/6, p d = 5/3, g u = 5/6, g d = 5/3<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
43<br />
Technische Universität München Sumer Term 2012<br />
Dynamic Logic<br />
(Precharge Logic)<br />
High-Speed Digital CMOS Circuits<br />
44<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Low input & parasitic caps.<br />
No contention<br />
No static power consumption<br />
Extremely fast<br />
Wide NOR structures e.g. for<br />
decoders<br />
Dynamic Logic<br />
Sensitive to noise and leakage<br />
High dynamic power consumption<br />
Clocking required<br />
Monotonicity requirement<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
45<br />
Technische Universität München Sumer Term 2012<br />
15
High Fanin Dynamic Gates<br />
Wide NOR Structures<br />
NOR operation is for free in single<br />
ended domino gate<br />
Wide OR structures cause significant<br />
leakage currents degrading the charge<br />
on the dynamic node keeper<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
46<br />
Technische Universität München Sumer Term 2012<br />
Alternative for Wide NOR: Pseudo NMOS<br />
Cross current, acceptable e.g. if pulldown<br />
is exception or for high-speed<br />
applications<br />
Reduced swing (tradeoff between pullup<br />
speed and level reduction<br />
ratioed<br />
High-Speed Digital CMOS Circuits<br />
47<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
High Fanin Dynamic Gates<br />
Long NAND Structures<br />
No contention<br />
Low load<br />
long NMOS pull-down chain possible<br />
but charge sharing is critical<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
48<br />
Technische Universität München Sumer Term 2012<br />
16
Evolution of Power Consumption<br />
Sakurai, ISSCC 03<br />
Leakage currents<br />
became a significant<br />
component of power<br />
dissipation.<br />
Fortunately it is not thus<br />
serious<br />
Technology innovation<br />
can only decelerate this<br />
trend.<br />
Circuit innovation (sleep<br />
transistor scheme)<br />
reduces leakage in idle<br />
modules<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
49<br />
Technische Universität München Sumer Term 2012<br />
Leakage Currents in Deep Sub-Micron MOSFETs:<br />
Classic Leakage Currents<br />
gate<br />
source drain<br />
1<br />
2<br />
Subthreshold current<br />
Junction leakage<br />
1<br />
bulk<br />
High-Speed Digital CMOS Circuits<br />
50<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Subthreshold Leakage<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
51<br />
Technische Universität München Sumer Term 2012<br />
2<br />
17
Leakage Currents in Deep Sub-Micron MOSFETs:<br />
Tunneling Currents<br />
gate<br />
source drain<br />
1<br />
2<br />
1<br />
bulk<br />
Gate tunneling current<br />
Gate induced drain leakage<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
52<br />
Technische Universität München Sumer Term 2012<br />
Noise and Leakage Sensitivity<br />
High-Speed Digital CMOS Circuits<br />
53<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
2<br />
Leakage currents discharge<br />
dynamic node<br />
limited retention time<br />
minimum operation frequency<br />
(very disadvantageous for<br />
production test or low speed<br />
operation modes)<br />
Noise on power and signal wires<br />
opens pull-down paths weakly<br />
erroneous discharge of<br />
dynamic node<br />
Reduction of Noise & Leakage Sensitivity<br />
Weak keeper device compensates for leakage and noise<br />
induced discharge currents<br />
Size keeper for approximately 10% of discharge current<br />
5-10 % speed degradation<br />
No inversion<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
54<br />
Technische Universität München Sumer Term 2012<br />
18
good device<br />
properties but<br />
large current<br />
Designing Weak Keepers<br />
weak keeper small W / L – ratio small W, large L?<br />
small current<br />
but strongly<br />
sensitive to<br />
variations<br />
small current<br />
but modeling of<br />
length dependence<br />
is difficult<br />
good keeper<br />
device<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
55<br />
Technische Universität München Sumer Term 2012<br />
good keeper device but<br />
large output loading<br />
Design of Weak Keepers 2<br />
good keeper with reduced<br />
output loading<br />
High-Speed Digital CMOS Circuits<br />
56<br />
Stephan Henzler<br />
Technische Universität München Sumer Term 2012<br />
Adaptive Keepers<br />
With increasing process variations<br />
keeper design becomes difficult<br />
slow NMOS & fast PMOS:<br />
– keeper too strong<br />
– significant speed degradation<br />
fast NMOS & slow PMOS:<br />
– high leakage in pull-down path<br />
but small compensation current<br />
keeper too weak<br />
– erroneous discharge<br />
Steven Hsu, Intel, ISSCC 2006<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
57<br />
Technische Universität München Sumer Term 2012<br />
19
Delayed Keeper<br />
Increasing leakage calls for stronger keepers<br />
delay penalty, advantage of dynamic circuits vanishes<br />
Concept:<br />
– Use small keeper which cannot compensate leakage completely<br />
– Enable strong keeper after evaluation/discharge is completed<br />
Challenge: Size permanent and delayed keeper such that<br />
leakage currents do not compromise logical decision<br />
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Charge Sharing in Dynamic Gates<br />
Charge sharing between<br />
cap of pre-charged node<br />
and intrinsic caps<br />
Eventually undefined<br />
levels and disturbance of<br />
subsequent stages<br />
Might be recovered by keeper<br />
Can be easily overlooked in simulation<br />
think about worst case situation<br />
Remedy: Precharge internal nodes with<br />
weak transistors<br />
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Multi-Output Dynamic Logic<br />
Domino gates can produce multiple logic functions (with<br />
common subterms) simultaneously<br />
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Compound Domino Logic<br />
Coupling inverters can be substituted by any static gate to<br />
reduce number of logic stages<br />
High-Speed Digital CMOS Circuits<br />
Stephan Henzler<br />
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Conditional Keeper<br />
Strongly low skewed<br />
CMOS gates with precharge<br />
Reduced contention<br />
No latching<br />
Also known as skewed<br />
CMOS<br />
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Clocking of Single-Rail Domino Circuits<br />
Sequential activation of logic stages<br />
High noise sensitivity<br />
High speed optimized clock skews variation sensitive<br />
Circuit becomes somehow “analog”<br />
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Clocking of Single-Rail Domino Circuits 2<br />
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Clocking of Single-Rail Domino Circuits 3<br />
Self timed evaluation (domino principle)<br />
Simultaneous pre-charge / evaluation<br />
Bypassing of stages possible<br />
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Clocking of Single-Rail Domino Circuits 4<br />
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Clocking of Footer-Less Domino Circuits<br />
No footer speed & power improvement<br />
Self timed<br />
Sequential pre-charge to avoid cross currents<br />
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Clocking of Footer-Less Domino Circuits 2<br />
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NORAce Domino Logic<br />
Alternating NMOS / PMOS Domino Gates<br />
pre-charged state disables all evaluation paths<br />
Self timed<br />
Noise sensitive<br />
No direct bypassing<br />
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NORAce Domino Logic 2<br />
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Cross Coupled Domino<br />
– A Dynamic Dual Rail Family –<br />
No contention<br />
Improved robustness<br />
Implicit inversion<br />
Higher clock load<br />
Complex wiring<br />
No wide NOR structures<br />
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Is it a good idea to use dynamic logic?<br />
Well, it‘s fancy<br />
Performance advantage vanishes in DSM technologies<br />
Many design pitfalls, e.g. charge sharing, leakage, noise<br />
Very susceptible to parasitics, PVT, etc.<br />
Weak EDA support, e.g. timing verification,<br />
poor verification<br />
Conclusion<br />
– Dynamic logic is a risk – Say No-No!<br />
– Dynamic logic is often the reason for redesigns<br />
– Avoid whenever possible<br />
– If you think its required, first seek for architectural loopholes,<br />
e.g. logic optimization, pipelining, parallelization …<br />
If you find no other way do it, but very carefully!<br />
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This is a industry wide<br />
consensus and trend<br />
Industrie‘s Oppineon<br />
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