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Issue 17 - Free-Energy Devices

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is not charge motion<br />

with respect to the existing electric field, the<br />

energy produced could be due to the<br />

gravitational space time energy absorbed<br />

through a gravitational matter space time field<br />

created due to the existing electric field; the<br />

thrust could be due to gravitational space time<br />

absorbed momentum change; such a<br />

moving system is the system under study.<br />

2. Proposed Asymmetric Capacitors System<br />

2.1 General<br />

Inside a dielectric means 1 (Fig. 1) are placed<br />

metallic conductors 3 which are electrically<br />

charged in relation to the metallic casing 2,<br />

which is electrically neutral.<br />

Fig.1<br />

Zero potential casing asymmetric capacitor system . General<br />

arrangement<br />

This is achieved by means of high voltage<br />

imposed between the conductors 3 and the<br />

metallic casing 2. We assume that the<br />

electrostatic field equation is everywhere in<br />

force, which concerning isotropic materials<br />

with constant specific inductive capacity<br />

(dielectric constant) is as follows:<br />

(1)<br />

where E r is the field intensity, φ –the<br />

potential, ρ − the density of spatial charge.<br />

The force F according to equation (1) for an<br />

area enclosed by a surface S is[13]:<br />

(2)<br />

where D is the electric displacement and n<br />

the orthogonal unitary vector on the surface S<br />

directed outside the area enclosed by the<br />

surface S . Consequently the resultant force<br />

tot F on the whole system, according to<br />

equation (2) will be:<br />

74 New <strong>Energy</strong> Technologies, <strong>Issue</strong> #3(18) 2004<br />

(3)<br />

where ds is an elementary surface unit and dq<br />

the surface charge corresponding to the<br />

surface dS.<br />

The force F tot is equal to zero because the field<br />

intensity E on the outer surface of the casing 2<br />

is equal to zero. In reality a charge dq on a<br />

metallic surface creates by induction a charge q<br />

d on the dielectric 1 surface so that:<br />

(4)<br />

where ε r is the relative dielectric constant of<br />

the dielectric means 1 [14,15].<br />

Due to the equation (4), the total resulting force<br />

F, exerted on the charges dq and (-dq’) , because<br />

of the existing electric field of intensity E<br />

corresponding to a surface element on the<br />

surfaces 2 in or 3 out , will be:<br />

(5)<br />

A coefficient 1/2 is needed because of dq and<br />

(dq’), distribution[16]; Eq.(5) shows that at the<br />

system surfaces always an acting force exists.<br />

Because of Eq.(5) we have:<br />

(6)<br />

wherein F M is the total resultant force exerted<br />

on the conductors 2, 3, being derived if we<br />

assume thatequation (2) is in force. Then tot F,<br />

according to equation (3) should be equal to<br />

zero. When however the total resultant force<br />

F M exerted on the metallic elements 2,3 is not<br />

equal to zero, then, according to<br />

equation (6), F tot will not be equal to zero as

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