Issue 17 - Free-Energy Devices

The semiconductor transformator of
environment heat to electric current energy
The modern energetic’s problem is in the
production of the electric energy, which is, being
the source of material goods of the man, who
happened to find himself in a mortal withstanding
to his environment (which is the nature); and as a
result of this, an ecological disaster is inescapable.
The search and the discovery of alternative,
ecologically clean means of the electric energy
collection is the actual task of Humanity. One of
the energy sources is the natural environment
itself: the air of the atmosphere, the waters of the
seas and oceans, which contain a huge quantity of
the heat energy received from the sun. The method
of transformation heat energy of the environment
to the constant electrical current, which is based
on contact phenomenon between a metal and
semiconductors of different type of conduciveness
(see Fig.1).
Fig.1
The principle scheme of the alternator. Where: P – the
semiconductor’s crystal (silicon of the n-type), p-n – the crossing
with a contact electric field Ek, M1 – the metal contact with a parea
(aluminum), M1 – the metal contact with n-area (aluminum),
d- the depth of p-n crossing’s flight (not more than 10 mkm), Rh –
the external load resistance.
The alternator’s work principle is following. For
example, the work on electron’s exit from the
semiconductor of n-type makes 4.25 eV, of the ptype
– 5.25 eV and of the aluminum – 4.25 eV.
That’s why the contact M 2 with the
semiconductor of n-type is omic and does not
affect the alternator’s work, and the contact M 1
New Energy Technologies, Issue #3 (18) 2004
Anatoly N. Zernij
Ukraine Email: zernij@hotmail.com
with a semiconductor of the p-type is injecting
one. Under the action of thermal movement
powers and as a result of exit work’s difference,
electrons from the metal contact M 1 will be
injected to the p-area of the semiconductor. One
part of the electrons recombinates with the p-area
crystal holes, and the second part of the electrons
will be overthrown by the electric field p-n of the
E k crossing to the n-area of the crystal. At that
the semiconductor’s crystal‘s n-area and the
contact M 2 will be charged negatively, and contact
M 1, because of the electron’s leave from it,
positively, which will lead in the end to the
appearance of difference of the electric potentials
between M 1 and M 2 contacts.
The electrons’ stream from M 1 and M 2 will be
taking place, till the raising electrical field between
the contacts creates an opposite stream of
electrons from the n-area to the p-area of the
crystal, because of the potential barrier of the p-n
crossing decrease. When these currents of the
electrons become leveled, an electrical and
thermodynamic equilibrium will be established in
the isolated crystal. Thus between the contacts
M 1 and M 2 will be established a potentials
difference, which will be equal the half of
contact difference of potentials p-n crossing (in
this case – 0.55V), which means a presence
between them of Electro Motive Force. If we
connect the contacts M 1 and M 2 with an
external metallic conductor with a resistance
Rh, then the electrical and thermo dynamical
equilibrium of the semi conductive crystal will
be broken and in the load chain the electric
current IRh will flow. At this, the p-n crossing
will be cooling down, because the energy of
electrons, coming from the p-area to the n-area
of the semiconductor will be raised at the inner
(thermal) energy of the crystal’s structure of the
semiconductor. For the support in the chain of
a load of constant by its values current, to the
crystal it is necessary to supply the heat from
the environment.
33