Solar Grade-Silicon, Ingot, Wafer Technology and Market Trend
Solar Grade-Silicon, Ingot, Wafer Technology and Market Trend
Solar Grade-Silicon, Ingot, Wafer Technology and Market Trend
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<strong>Solar</strong> <strong>Grade</strong>-<strong>Silicon</strong>, <strong>Ingot</strong>, <strong>Wafer</strong> <strong>Technology</strong> <strong>and</strong> <strong>Market</strong> <strong>Trend</strong> (2008~2012)<br />
2.4.2 Vapor to Liquid Deposition (VLD): Tokuyama<br />
VLD method produces trichlorosilane or monosilane gasses by reacting<br />
metallic silicon with either hydrochloric acid or hydrogen, <strong>and</strong> then produces<br />
liquid silicon directly from the gas. It is similar to the Siemens process in using<br />
trichlorosilane gasses, but it obtains liquid silicon as the gas undergoes a tubeshaped<br />
reactor with inductive heating to be restored.<br />
Figure 2.4.2 VLD Method Concept<br />
Source: Tokuyama<br />
Hence, VLD method has outst<strong>and</strong>ing efficiency <strong>and</strong> productivity. It has<br />
extraction speed 10 times faster than the conventional Siemens process, but<br />
is difficult to delete impurities. The Siemens process starts with obtaining<br />
semiconductor silicon with ultra high purity <strong>and</strong> is applied to the solar gradesilicon<br />
production by lowering the quality <strong>and</strong> enhancing the productivity. On<br />
the other h<strong>and</strong>, VLD process is suitable for the solar grade-silicon production<br />
which requires relatively lower quality <strong>and</strong> high productivity. The VLD process<br />
is currently known to be developed by Tokuyama, but has difficulties in terms<br />
of yield. Its energy efficiency is more than 5 times higher than the Siemens<br />
process.<br />
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SAMPLE<br />
Jan’09