EMC Simulations of Power Electronic Devices and Systems - serec

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Modeling Circuit Model © ABB Group June 2, 2010 | Slide 14 Gate signal Package Z-matrix IGBTs & diodes Load IGBTs & diodes
Results Switching Analysis © ABB Group June 2, 2010 | Slide 15 IGBTs 1-4 IGBTs 5-8 Initial design Asymmetric current sharing between paralleled IGBTs up to 140 % current overshoot per IGBT Optimized design Symmetric current sharing between paralleled IGBTs max 60 % current overshoot per IGBT
Page 1 and 2: Didier Cottet, Stanislav Skibin, Iv
Page 3 and 4: Introduction PE in Power Supply & D
Page 5 and 6: Introduction PE in Power Supply & D
Page 7 and 8: Introduction EMC / EMI in Power Ele
Page 9 and 10: Methodology PEEC - Partial Element
Page 11 and 12: Outline © ABB Group June 2, 2010 |
Page 13: Modeling Package Macro Modeling ©
Page 17 and 18: Outline © ABB Group June 2, 2010 |
Page 19 and 20: Case Study Medium Voltage Static Fr
Page 21 and 22: Modeling Bus Bar Thickness vs. Freq
Page 23 and 24: Model Improvement Acceleration © A
Page 25 and 26: Model Improvement Decomposed (Segme
Page 27 and 28: Results Impedance Discussion © ABB
Page 29 and 30: Conclusion © ABB Group June 2, 201

EMC Simulations of Power Electronic Devices and Systems - serec

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