EMC Simulations of Power Electronic Devices and Systems - serec
EMC Simulations of Power Electronic Devices and Systems - serec
EMC Simulations of Power Electronic Devices and Systems - serec
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Didier Cottet, Stanislav Skibin, Ivica Stevanovic<br />
ABB Switzerl<strong>and</strong> Ltd., Corporate Research, 28. May 2010<br />
<strong>EMC</strong> <strong>Simulations</strong> <strong>of</strong> <strong>Power</strong><br />
<strong>Electronic</strong> <strong>Devices</strong> <strong>and</strong> <strong>Systems</strong><br />
© ABB Group<br />
June 2, 2010 | Slide 1
Outline<br />
© ABB Group<br />
June 2, 2010 | Slide 2<br />
Introduction<br />
Numerical Method<br />
Device <strong>Simulations</strong><br />
System <strong>Simulations</strong><br />
Conclusion
Introduction<br />
PE in <strong>Power</strong> Supply & Distribution<br />
© ABB Group<br />
June 2, 2010 | Slide 3<br />
Where do we find power electronics in power generation,<br />
transmission <strong>and</strong> distribution?
Introduction<br />
PE in <strong>Power</strong> Supply & Distribution<br />
© ABB Group<br />
June 2, 2010 | Slide 4<br />
Static excitation systems<br />
<strong>Power</strong><br />
stations<br />
SVC Light with<br />
energy storage<br />
Grid stabilization<br />
Solar inverters<br />
Photovoltaic
Introduction<br />
PE in <strong>Power</strong> Supply & Distribution<br />
© ABB Group<br />
June 2, 2010 | Slide 5<br />
HVDC for shore<br />
connection<br />
Oil platforms<br />
AC drives for pumps
Introduction<br />
PE in <strong>Power</strong> Supply & Distribution<br />
© ABB Group<br />
June 2, 2010 | Slide 6<br />
Generator frequency<br />
converter<br />
Wind parks<br />
StatComs for grid code<br />
HVDC for shore<br />
connection
Introduction<br />
<strong>EMC</strong> / EMI in <strong>Power</strong> <strong>Electronic</strong>s<br />
© ABB Group<br />
June 2, 2010 | Slide 7<br />
<strong>EMC</strong> (compatibility)<br />
St<strong>and</strong>ards compliancy<br />
Switching harmonics / THD<br />
(up to 25 th / 40 th harmonic)<br />
Conducted emissions<br />
(150 kHz – 30 MHz)<br />
Radiated emissions<br />
(30 MHz – 1 GHz)<br />
EMI (interferences)<br />
Malfunction through self disturbance<br />
Performance de-rating<br />
…through load imbalance<br />
…through voltage/currents overshoots<br />
Low ruggedness in short circuit mode<br />
Electric stress through ringing <strong>and</strong> oscillations
Outline<br />
© ABB Group<br />
June 2, 2010 | Slide 8<br />
Introduction<br />
Numerical Method<br />
Device <strong>Simulations</strong><br />
System <strong>Simulations</strong><br />
Conclusion
Methodology<br />
PEEC – Partial Element Equivalent Circuits<br />
© ABB Group<br />
June 2, 2010 | Slide 9<br />
1) 3D geometry description<br />
<strong>and</strong> materials definition<br />
2) Geometry subdivision<br />
Nodes<br />
3) Surface mesh<br />
Node capacitances, C …<br />
to GND<br />
…to other nodes<br />
4) Volume mesh<br />
Node-to-node<br />
…resistances, R<br />
…self inductances, L<br />
Mutual inductances, M<br />
5) RLCM-circuit description
Methodology<br />
Modeling Procedures<br />
© ABB Group<br />
June 2, 2010 | Slide 10<br />
3D Broadb<strong>and</strong> Solution<br />
Time <strong>and</strong> frequency<br />
domain<br />
Current <strong>and</strong> potential<br />
distributions<br />
E-/H-fields<br />
Linear elements only<br />
Slow<br />
Order reduced Z-matrix<br />
for defined frequency f extr<br />
SPICE, Simplorer, …<br />
0D Narrowb<strong>and</strong> Solution<br />
Valid around frequency f extr<br />
Time <strong>and</strong> frequency<br />
domain<br />
Nonlinear elements<br />
No current/potential<br />
distributions<br />
No E-/H-fields<br />
Fast
Outline<br />
© ABB Group<br />
June 2, 2010 | Slide 11<br />
Introduction<br />
Numerical Method<br />
Device <strong>Simulations</strong><br />
System <strong>Simulations</strong><br />
Conclusion
Simulated Device<br />
IGBT <strong>Power</strong> Modules<br />
© ABB Group<br />
June 2, 2010 | Slide 12<br />
Example: HiPak IGBT power module<br />
Rating: 6.5 kV, 2.4 kA<br />
24 parallel IGBTs<br />
12 anti-parallel diodes<br />
EMI related design issues<br />
Dynamic / static current distribution<br />
Short circuit capabilities<br />
EM noise emission<br />
CM coupling through base plate<br />
Dominant effect<br />
Local disturbances in<br />
IGBT gate voltages, U GE<br />
6 ×
Modeling<br />
Package Macro Modeling<br />
© ABB Group<br />
June 2, 2010 | Slide 13<br />
3D PEEC model<br />
Substrates<br />
Bond wires<br />
<strong>Power</strong> terminals<br />
Auxiliary terminals<br />
Extraction <strong>of</strong> SPICE<br />
compatible Z-matrix<br />
(0D narrowb<strong>and</strong> solution)<br />
**********************************************<br />
*** subcircuit for hipak_package v1.0<br />
**********************************************<br />
.subckt hipak_package_v1 1 2 3 4 5 6 7 8 9 10<br />
1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26<br />
2728 29 30 31 32 33 34 35 36 37 38<br />
LZ_0 1 i_node0_2 2.25402e-008<br />
LZ_1 3 i_node1_2 1.44454e-008<br />
LZ_2 5 i_node2_2 9.15187e-009<br />
LZ_3 7 i_node3_2 2.30544e-008<br />
LZ_4 9 i_node4_2 1.48664e-008<br />
.<br />
.<br />
.<br />
KZ_1_0 LZ_1 LZ_0 0.888218<br />
KZ_2_0 LZ_2 LZ_0 0.662318<br />
KZ_2_1 LZ_2 LZ_1 0.812005<br />
KZ_3_0 LZ_3 LZ_0 0.0200939<br />
KZ_3_1 LZ_3 LZ_1 -0.0428358<br />
.<br />
.<br />
.<br />
RZ_0_0 i_node0_2 i_node0_3 0.000948648<br />
HZ_0_1 i_node0_3 i_node0_4 Vam_1 0.000703874<br />
HZ_0_2 i_node0_4 i_node0_5 Vam_2 0.000529978<br />
HZ_0_3 i_node0_5 i_node0_6 Vam_3 4.56201e-005<br />
HZ_0_4 i_node0_6 i_node0_7 Vam_4 4.65392e-005<br />
HZ_0_5 i_node0_7 i_node0_8 Vam_5 4.79563e-005<br />
.<br />
.<br />
.<br />
Vam_18 i_node18_21 38 dc=0v<br />
.ends
Modeling<br />
Circuit Model<br />
© ABB Group<br />
June 2, 2010 | Slide 14<br />
Gate signal<br />
Package<br />
Z-matrix<br />
IGBTs &<br />
diodes<br />
Load<br />
IGBTs &<br />
diodes
Results<br />
Switching Analysis<br />
© ABB Group<br />
June 2, 2010 | Slide 15<br />
IGBTs 1-4<br />
IGBTs 5-8<br />
Initial design<br />
Asymmetric current sharing<br />
between paralleled IGBTs<br />
up to 140 % current<br />
overshoot per IGBT<br />
Optimized design<br />
Symmetric current sharing<br />
between paralleled IGBTs<br />
max 60 % current<br />
overshoot per IGBT
Results<br />
H-Field Coupling Analysis<br />
© ABB Group<br />
June 2, 2010 | Slide 16<br />
Underst<strong>and</strong> coupling effects through visualization <strong>of</strong><br />
…magnetic field vectors <strong>and</strong><br />
…current density distributions<br />
Asymmetric coupling into V GE<br />
Asymmetric terminal current paths<br />
Open coupling loops in gate-emitter paths<br />
(Note: 3D simulation using TLM method, Transmission Line Matrix)
Outline<br />
© ABB Group<br />
June 2, 2010 | Slide 17<br />
Introduction<br />
Numerical Method<br />
Device <strong>Simulations</strong><br />
System <strong>Simulations</strong><br />
Conclusion
System <strong>Simulations</strong><br />
New Challenges<br />
© ABB Group<br />
June 2, 2010 | Slide 18<br />
Complexity<br />
Number <strong>of</strong> components<br />
Number <strong>of</strong> simulation cases<br />
Physical dimensions<br />
Availability <strong>of</strong> input data<br />
…
Case Study<br />
Medium Voltage Static Frequency Converter<br />
© ABB Group<br />
June 2, 2010 | Slide 19<br />
Static Frequency Converter<br />
16 inverter units<br />
(IGCTs, 3-level ANPC)<br />
1 common DC bus<br />
(~11 m length, +/neutral/-)<br />
18 DC link capacitors<br />
(film capacitors)<br />
Distributed, low resistive LC circuit<br />
Risk <strong>of</strong> ringing <strong>and</strong> oscillations<br />
EM noise <strong>and</strong> thermal stress <strong>of</strong> DC link capacitors
Modeling<br />
Objectives<br />
© ABB Group<br />
June 2, 2010 | Slide 20<br />
DC-link system impedance simulation<br />
Identify system resonances<br />
Analysis <strong>of</strong> individual impedance contributions<br />
(bus bars, junctions, capacitors, cables)<br />
Design goal: reduce stray inductances
Modeling<br />
Bus Bar Thickness vs. Frequency<br />
© ABB Group<br />
June 2, 2010 | Slide 21<br />
Bus bar thickness: t = 2 cm<br />
Frequency <strong>of</strong> interest: DC to 10 kHz<br />
Skin depth ~ bar thickness<br />
Need for accurate & efficient volume discretization<br />
Non-uniform cross-sectional meshing
Model Verification<br />
<strong>Simulations</strong> vs. Measurements<br />
© ABB Group<br />
June 2, 2010 | Slide 22<br />
Impedance measurement setup<br />
meas.<br />
sim.<br />
short circuit,<br />
0D narrowb<strong>and</strong><br />
Capacitor cables to bus bar<br />
meas.<br />
sim.<br />
High accuracy with 0D narrowb<strong>and</strong> solution<br />
capacitive load,<br />
0D narrowb<strong>and</strong>
Model Improvement<br />
Acceleration<br />
© ABB Group<br />
June 2, 2010 | Slide 23<br />
Accurate volume<br />
discretization for skin-<br />
<strong>and</strong> proximity effects<br />
Large PEEC model<br />
Many ports<br />
Large RL-matrix<br />
in Simplorer<br />
Acceleration through<br />
divide <strong>and</strong> conquer<br />
(domain decomposition)<br />
3 small PEEC model<br />
Few ports<br />
9 small RL-matrices<br />
in Simplorer<br />
left 7 x intermediate right
Model Improvement<br />
Full Model<br />
© ABB Group<br />
June 2, 2010 | Slide 24<br />
×9
Model Improvement<br />
Decomposed (Segmented) Model<br />
© ABB Group<br />
June 2, 2010 | Slide 25<br />
×9
Model Improvement<br />
Verification<br />
© ABB Group<br />
June 2, 2010 | Slide 26<br />
- Full model<br />
- Segmented<br />
model<br />
- 0D narrowb<strong>and</strong><br />
3D broadb<strong>and</strong><br />
- Full model<br />
- Segmented<br />
model<br />
High agreement between full<br />
<strong>and</strong> segmented model<br />
High agreement between<br />
3D broadb<strong>and</strong> PEEC <strong>and</strong><br />
0D narrowb<strong>and</strong> segmented<br />
model
Results<br />
Impedance Discussion<br />
© ABB Group<br />
June 2, 2010 | Slide 27<br />
Single capacitor connected<br />
at far end <strong>of</strong> bus bar<br />
Cap + cables + bus bar<br />
Cap + cables<br />
Cap<br />
Impact on f res :<br />
bus bar <strong>and</strong> cables<br />
Nine capacitors connected<br />
along bus bar<br />
Complete bus bar<br />
Simplified bus bar<br />
(no junction elements)<br />
Ideal connection<br />
Impact on Z characteristics:<br />
bus bar <strong>and</strong> junctions
Outline<br />
© ABB Group<br />
June 2, 2010 | Slide 28<br />
Introduction<br />
Numerical Method<br />
Device <strong>Simulations</strong><br />
System <strong>Simulations</strong><br />
Conclusion
Conclusion<br />
© ABB Group<br />
June 2, 2010 | Slide 29<br />
<strong>Power</strong> electronics omnipresent in power T&D<br />
<strong>EMC</strong> <strong>and</strong> EMI in power electronics are known issues<br />
PEEC as promising numerical method for its flexibility<br />
Frequency range (DC to HF)<br />
Scalability (R, L, C)<br />
Time- <strong>and</strong> frequency domain<br />
Circuit formulation<br />
Device simulations: Advanced state-<strong>of</strong>-the-art for<br />
System simulations: Efficient methods in available & in use<br />
Effective acceleration methods for large system simulations<br />
PEEC simulations as powerful tool for bus bar design
© ABB Group<br />
June 2, 2010 | Slide 30
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