High transmission EUVL pellicle development - Sematech

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Thermal model Pellicle (25% EUV absorbed) Entrance Plane of PO Reticle: 5-20W* • Instantaneous power at slit can result in high thermal load. • Transient model is developed to calculate peak rise in pellicle temperature * OoB power & IU transmission of EUV + OoB spectrum dependent "EUVL Pellicle Development", Yashesh Shroff, Pei-Yang Yan, F. Salamassi, Eric Gullickson Illuminator exit plane IF: 180W EUVL Symposium 2008, Lake Tahoe 6
Cooling time Membrane Parameters: • Pellicle thickness, d = 50nm • Exposure slit area, A = 10cm 2 • Exposure slit time, t = 10ms Constants • Si specific heat, c = 0.7J/g-k • Emissivity, ε = 0.5 • Radiative loss, σ = 5.67e-12 • Si density, ρ = 2.33g/cm3 ΔT=0 cooling time (ms) Pellicle temp stabilization v/s input radiation 40 800 0 0 5 10 15 20 25 Reticle incident power (W) 0 Q= c⋅m⋅ΔT ∂Q = A⋅ε ⋅σ⋅ dt 4 4 ( T − ) env TSi "EUVL Pellicle Development", Yashesh Shroff, Pei-Yang Yan, F. Salamassi, Eric Gullickson 35 30 25 20 15 10 5 ∂T ⎛ A⋅ε ⋅σ⎞ = ⎜− ⎟T dt ⎝ c⋅m ⎠ Assumes 25% reticle incident power absorption by pellicle EUVL Symposium 2008, Lake Tahoe 7 Si 4 700 600 500 400 300 200 100 ΔT initial temp rise (K)
Page 1 and 2: High transmission EUVL pellicle dev
Page 3 and 4: Concept Square cell mesh Hexagonal
Page 5: Overview • Motivation & specs •
Page 9 and 10: Requirements for reaching pellicle
Page 11 and 12: Transmission results Membrane: 50nm
Page 13 and 14: Pellicle transmission improvement 1
Page 15 and 16: Full-size pellicle development •
Page 17 and 18: position (mm) 80 60 40 20 0 -20 -40
Page 19 and 20: Scan test: 6G with 500ms pause ever
Page 21 and 22: DUV AIMS test • 150nm 1:1 feature
Page 23: Acknowledgements •Bob Gunion and

High transmission EUVL pellicle development - Sematech

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