High transmission EUVL pellicle development - Sematech
High transmission EUVL pellicle development - Sematech
High transmission EUVL pellicle development - Sematech
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
Pellicle Process at LBNL<br />
1. Spin release layer on Si wafer.<br />
2. Deposit Si + Ru capping layer using<br />
magnetron sputtering.<br />
3. Spin on photoresist.<br />
4. Pattern mesh using contact<br />
lithography.<br />
5. Electroplate Ni mesh.<br />
6. Remove resist.<br />
7. Attach to frame and release from<br />
substrate.<br />
"<strong>EUVL</strong> Pellicle Development", Yashesh Shroff, Pei-Yang Yan, F. Salamassi, Eric Gullickson<br />
Pellicle 50 nm Si with 100<br />
micron pitch and 3 micron<br />
linewidth mesh. Average<br />
<strong>transmission</strong> at 13.5 nm is<br />
75.7%<br />
<strong>EUVL</strong> Symposium 2008, Lake Tahoe 10
Change language