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Affirma Spectre DC Device Matching Analysis Tutorial - Cadence ...

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5) For each Resistor<br />

<strong>Affirma</strong> <strong>Spectre</strong> <strong>DC</strong> <strong>Device</strong> <strong>Matching</strong> <strong>Analysis</strong> <strong>Tutorial</strong><br />

• 3-sigma output variation,<br />

• 3-sigma Resistor current mismatch to nominal resistance current ratio,<br />

• 3-sigma VR variation, 3σ(ΔVr) = 3σ(ΔIr).R<br />

• 3-sigma IR variation, 3σ(ΔIr)<br />

• 3-sigma Resistor variation,<br />

We define a threshold mth, below which the contributions will not be shown, currently, in<br />

spectre mth = 0.1%. Mth is an analysis parameter.<br />

2. Summary of Theory.<br />

Statistical variation of drain current in a MOSFET is modeled by:<br />

where:<br />

Ids<br />

Ids o<br />

ΔIds<br />

∂<br />

3σ( ΔIr)<br />

Vout<br />

∂ΔIr<br />

3 σΔIr ( )<br />

----------------R<br />

Ir0 ds = Idso+ ΔIds<br />

-- is the total drain to source current.<br />

-- is the nominal current.<br />

3σ( ΔIr)<br />

--------------------<br />

Ir0 , (EQ 1)<br />

-- is the variation in drain to source current due to local device variation.<br />

Let Vout be the output signal of interest, then the variance of Vout due to the i<br />

MOSFET is approximated by:<br />

th<br />

Vout)i<br />

⎛ ∂<br />

Vout⎞<br />

⎝∂ΔIds ⎠<br />

i<br />

2<br />

=<br />

(EQ 2)<br />

Release Date Back Page 15<br />

Close<br />

15<br />

Ids o<br />

σ2( ΔIdsi)

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