Affirma Spectre DC Device Matching Analysis Tutorial - Cadence ...
Affirma Spectre DC Device Matching Analysis Tutorial - Cadence ...
Affirma Spectre DC Device Matching Analysis Tutorial - Cadence ...
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
5) For each Resistor<br />
<strong>Affirma</strong> <strong>Spectre</strong> <strong>DC</strong> <strong>Device</strong> <strong>Matching</strong> <strong>Analysis</strong> <strong>Tutorial</strong><br />
• 3-sigma output variation,<br />
• 3-sigma Resistor current mismatch to nominal resistance current ratio,<br />
• 3-sigma VR variation, 3σ(ΔVr) = 3σ(ΔIr).R<br />
• 3-sigma IR variation, 3σ(ΔIr)<br />
• 3-sigma Resistor variation,<br />
We define a threshold mth, below which the contributions will not be shown, currently, in<br />
spectre mth = 0.1%. Mth is an analysis parameter.<br />
2. Summary of Theory.<br />
Statistical variation of drain current in a MOSFET is modeled by:<br />
where:<br />
Ids<br />
Ids o<br />
ΔIds<br />
∂<br />
3σ( ΔIr)<br />
Vout<br />
∂ΔIr<br />
3 σΔIr ( )<br />
----------------R<br />
Ir0 ds = Idso+ ΔIds<br />
-- is the total drain to source current.<br />
-- is the nominal current.<br />
3σ( ΔIr)<br />
--------------------<br />
Ir0 , (EQ 1)<br />
-- is the variation in drain to source current due to local device variation.<br />
Let Vout be the output signal of interest, then the variance of Vout due to the i<br />
MOSFET is approximated by:<br />
th<br />
Vout)i<br />
⎛ ∂<br />
Vout⎞<br />
⎝∂ΔIds ⎠<br />
i<br />
2<br />
=<br />
(EQ 2)<br />
Release Date Back Page 15<br />
Close<br />
15<br />
Ids o<br />
σ2( ΔIdsi)