chemical physics of discharges - Argonne National Laboratory
chemical physics of discharges - Argonne National Laboratory chemical physics of discharges - Argonne National Laboratory
206 RESULTS AND DISCUSSION Preliminary studies indicated that extensive water was formed as a reaction product when the metal-organic compounds were decomposed via an oxygen discharge. This water could be chemically incorporated into the oxide films when the substrates were held below a certain temperature which depended on the organic evaporation rate and the hygroscopic nature of the substrate. For'instance, with NaCl substrates, the silica films were found to be free of water above 18OoC with a tetraethoxysilane evaporation rate of 0. 015 cm 3 /hour. (3) The presence of silicic acid was detected below 18OoC by infrared transmission studies. Conversely, with a KBr substrate and similar conditions of temperature and evaporation rate, extensive water was incorporated into the silica film. The,majority of the films prepared in this study were formed with low deposi- tion rates of about 20 Elminute on NaCl substrates heated to a temperature of 200°C. The optical properties of some of the films are presented in Table 1. TABLE 1 COMPARISON OF THE OPTICAL PROPERTIES OF VAPOR-FORMED FILMS AND THEIR RESPECTIVE GLASSY OR CRYSTALLINE OXIDES Principal Infrared Index of Mate rial Frequency (CM-l) Refraction Si02: vapor-formed film 1, 045;800 1.458) . 002 GeOZ : fusion-formed glass vapor -formed film 1, 080;800 85 0 1.458: . 002 1. 5827 . 002 B203 : fusion -formed glass vapor -formed film 860 1,350 1. 534-1. 607 1.470i . 002 fusion-forme d glass 1,370 1.464p) TixOy: ' vapor-formed film 950-700 b1.7 Ti02: anatase 1,200-500 >l. 7 Sn Oy: SnljT: vapor-formed film cassiterite 1,425 85 0 -5 00 1.536t - . 002 31.7 All of the films were isotropic when examined with polarized light and were amorphous byx-ray diffraction. The silica films were formed by (1) decomposing tetraethoxysilane, (C H 0)4 Si, in either an oxygen or argon plasma or (2) 2 5 decomposing tetraethysilane in an oxygen plasma. The germania and boron oxide films were prepared by decomposing tetraethoxygermane and triethylborate via an oxygen discharge. The infrared absorption frequencies and refractive indices of the latter three vapor-formed films are similar to those of the respective fusion-formed glasses, which suggests that a random network structure can be achieved by methods other than the conventional cooling of the melt. The spread in the index of refraction for germania glass was realized by slowing cooling one specimen and quenching another from 1 loO°C; the slow-cooled specimen had the larger refractive index. With the exception
207 of the boron oxide film, the films listed in Table 1 adhered well to the NaCl substrates. The B 0 film was immediately coated with mineral oil after removal from the glow dfsciarge apparatus because of its extreme moisture sensitivity and was only partially adherent. I The non-crystalline titanium oxide films were prepared from titanium tetra- isopropylate while maintaining an oxygen discharge. Since titanium oxide is not a common glass-forming system, one may inquire as to whether or not the viscosity of such a film would be similar to that of a glass near its transition region, e. i. 1013-1014 poises. For many undercooled sy t ms, the growth rate can be described in terms of the reciprocal viscosit$eas: U = AHf (Tf-T) 3TfTf ,A L % N where u is the rate of growth (cmlsec), T is the undercooled temperature, v\ is the viscosity (poises), Tf is the fusion temperature, A is the mean jump distance (cm), I-$ is the latcnt heat of fusion (ergs), and N is Avogadro's number. If this relationship is valid for a system, then an approximate estimation of the viscosity at the crystallization temperature can be made if the rate of growth (crystallization) is known. In this study, the titanium oxide film exhibited birefringence (crystallized) after 45 minutes at 325OC. An approximate rate of crystallization can be calculated for the film if it is assumed that the particles grew from some arbitrary value, for example, 10 8 to 110 before crystallinity was detected. The jump distance A was taken as 2 2 units. Although Ti02 dissociates, the heat of fusion has been reported as 15. 5 kcal/mole at a melting point of 184Ood6). The growth rate determined from the rate of crystallization is about 3. 7 x 10-l' cmlsec. The corresponding viscosity at 5980K is 5. 5 x 10" poises, which would classify the film as a high1 viscous supercooled liquid since the viscosity value is slightly below 1013-10'4 poises. Since viscosity is approximately an exponential function of temperature, it is reasonable to conclude that at some slightly lower tem erature the viscosity of the film is characteristic of a solid glass, e. i. 101f-1014 poises. An amorphous tin oxide film was formed by decomposing dibutyltin-diacetate via an oxygen plasma. Preliminary measurements indicated that the electrical resistivity of the film near room temperature was greater than lo7 ohm-cm. Comparing th I. R. spectra of the film and SnOZ, it is seen in Table 1 that the main absorption mode for the amorphous film occurs at a much higher frequency than that of the crystalline modification. This shift can probably be attributed to a large structural variation such as a change in coordination number. The basic apparatus shown in Figure 1 was modified as illustrated in Figure 2 in order to study the oxidation of SiF4 via an oxygen discharge. Research grade SiF4 gas was metered into the pyrex chamber at a rate of 1.8 cm3/minute. Simultaneously, dry oxygen was admitted at the rate of 5 cm3/minute. The electrodeless discharge was maintained at 800 u total pressure. Under these conditions, a thick non-adherent film was deposited onto the walls of the pyrex
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206<br />
RESULTS AND DISCUSSION<br />
Preliminary studies indicated that extensive water was formed as a reaction product<br />
when the metal-organic compounds were decomposed via an oxygen discharge.<br />
This water could be <strong>chemical</strong>ly incorporated into the oxide films when the substrates<br />
were held below a certain temperature which depended on the organic<br />
evaporation rate and the hygroscopic nature <strong>of</strong> the substrate. For'instance, with<br />
NaCl substrates, the silica films were found to be free <strong>of</strong> water above 18OoC<br />
with a tetraethoxysilane evaporation rate <strong>of</strong> 0. 015 cm<br />
3<br />
/hour. (3) The presence<br />
<strong>of</strong> silicic acid was detected below 18OoC by infrared transmission studies. Conversely,<br />
with a KBr substrate and similar conditions <strong>of</strong> temperature and evaporation<br />
rate, extensive water was incorporated into the silica film.<br />
The,majority <strong>of</strong> the films prepared in this study were formed with low deposi-<br />
tion rates <strong>of</strong> about 20 Elminute on NaCl substrates heated to a temperature<br />
<strong>of</strong> 200°C. The optical properties <strong>of</strong> some <strong>of</strong> the films are presented in Table 1.<br />
TABLE 1<br />
COMPARISON OF THE OPTICAL PROPERTIES OF<br />
VAPOR-FORMED FILMS AND THEIR RESPECTIVE<br />
GLASSY OR CRYSTALLINE OXIDES<br />
Principal Infrared Index <strong>of</strong><br />
Mate rial Frequency (CM-l) Refraction<br />
Si02: vapor-formed film 1, 045;800 1.458) . 002<br />
GeOZ :<br />
fusion-formed glass<br />
vapor -formed film<br />
1, 080;800<br />
85 0<br />
1.458: . 002<br />
1. 5827 . 002<br />
B203 :<br />
fusion -formed glass<br />
vapor -formed film<br />
860<br />
1,350<br />
1. 534-1. 607<br />
1.470i . 002<br />
fusion-forme d glass 1,370 1.464p)<br />
TixOy: ' vapor-formed film 950-700 b1.7<br />
Ti02: anatase 1,200-500 >l. 7<br />
Sn Oy:<br />
SnljT:<br />
vapor-formed film<br />
cassiterite<br />
1,425<br />
85 0 -5 00<br />
1.536t - . 002<br />
31.7<br />
All <strong>of</strong> the films were isotropic when examined with polarized light and were<br />
amorphous byx-ray diffraction. The silica films were formed by (1) decomposing<br />
tetraethoxysilane, (C H 0)4 Si, in either an oxygen or argon plasma or (2)<br />
2 5<br />
decomposing tetraethysilane in an oxygen plasma. The germania and boron<br />
oxide films were prepared by decomposing tetraethoxygermane and triethylborate<br />
via an oxygen discharge. The infrared absorption frequencies and refractive<br />
indices <strong>of</strong> the latter three vapor-formed films are similar to those<br />
<strong>of</strong> the respective fusion-formed glasses, which suggests that a random network<br />
structure can be achieved by methods other than the conventional cooling<br />
<strong>of</strong> the melt. The spread in the index <strong>of</strong> refraction for germania glass was<br />
realized by slowing cooling one specimen and quenching another from 1 loO°C;<br />
the slow-cooled specimen had the larger refractive index. With the exception