Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
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Eidgenössisches Departement <strong>für</strong><br />
Umwelt, Verkehr, <strong>Energie</strong> und Kommunikation UVEK<br />
<strong>Bundesamt</strong> <strong>für</strong> <strong>Energie</strong> <strong>BFE</strong><br />
LARCIS - LARGE-AREA CIS BASED SOLAR<br />
MODULES FOR HIGHLY PRODUCTIVE<br />
MANUFACTURING<br />
Annual Report 2008<br />
Author and Co-Authors D. Güttler, A. Chirila, Dr. A. N. Tiwari<br />
Institution / Company ETH Zürich<br />
Address Thin Film Physics Group, Technoparkstr. 1, 8005 Zürich<br />
Telephone, E-mail, Homepage +41 (0) 44 633 79 49, Ayodhya.Tiwari@empa.ch,<br />
http://www.tfp.ethz.ch<br />
Project- / Contract Number SES66-CT-2005-019757 / FP6-019757<br />
Duration of the Project (from – to) 01.11.2005 – 31.10.<strong>2009</strong><br />
Date 15.12.2008<br />
ABSTRACT<br />
This European collaborative project within the FP-6 EU program involves 6 universities and 4<br />
industries working together towards the development of large area Cu(In,Ga)Se2 (CIGS) based thin<br />
film solar modules for highly productive manufacturing. The project will improve the device<br />
performance and manufacturing technologies for low-cost, more stable, more efficient solar modules.<br />
In this project vacuum evaporation and electro-deposition approaches are used for absorber<br />
deposition and other components of the solar cells are improved. Important objectives of the overall<br />
project are processing of CIGS modules by co-evaporation, application of cost-effective methods and<br />
development of alternative buffer and back contact layers for large area CIGS solar cells on glass<br />
substrates.<br />
To meet the above-mentioned objectives the ETH group currently investigates i) the role of sodium<br />
incorporation into the CIGS absorber, as well as ii) different incorporation techniques in view of the<br />
suitability for the cost effective production. In order to improve the electronic properties of the CIGS<br />
absorber and thus enhance the cell efficiencies, first series of experiments were performed with the<br />
goal to determine the optimum dosage of sodium in the absorber material. Sodium fluoride layers of<br />
different thicknesses were deposited on top of the CIGS absorber layer and subsequently annealed.<br />
The cell performances were compared with respect the so introduced Na-dosage. Based on these<br />
results different sodium incorporation methods were compared.<br />
Another R&D activity of the ETH group is to modify the CIGS absorber in such a way that a separate<br />
deposition of the buffer layer between ZnO and CIGS could be avoided. First results were obtained<br />
by finishing the CIGS growth process with the deposition of an ~10 nm thick InxSey surface layer.<br />
Encouraging results have been obtained, but so far the efficiencies are below the highest efficiencies<br />
achieved with CdS buffer layer. However, this technique is promising for a low cost, in-line applicable<br />
production, since this thin InSeX layer can be deposited directly after the growing of CIGS, without<br />
additional processing steps and material requirements.<br />
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