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Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

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Fig. 1: Top: Elemental evaporation fluxes of Ga (blue), Cu (green), and In (red) depending on the<br />

spatial evaporation position for different final compositions (A,B,C).<br />

Bottom: Relative film composition during growth of the absorber layer (from left to right).<br />

Only layers with [Ga]/[In+Ga]=0.3 or lower (A, B) go through a Cu-rich phase during growth.<br />

[Ga]/[In+Ga]=0.2 [Ga]/[In+Ga]=0.3<br />

Fig. 2: [Cu]/[In+Ga]-ratio during growth of CIGS absorber layer (from left to right) taking into<br />

account the geometry of the evaporation sources for final composition of [Ga]/[In+Ga]=0.2<br />

(left) and [Ga]/[In+Ga]=0.3 (right).<br />

Large Area Flexible CIGS, D. Brémaud, ETH Zurich<br />

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