Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

29.09.2012 Views

Eidgenössisches Departement für Umwelt, Verkehr, Energie und Kommunikation UVEK Bundesamt für Energie BFE LARGE AREA FLEXIBLE CIGS Flexible CIGS solar cells on large area polymer foils with in-line deposition methods and application of alternative back contacts Annual Report 2008 Author and Co-Authors D. Brémaud, P. Blösch, D. Güttler, A.N. Tiwari Institution / Company ETH Zurich Address Thin Film Physics Group, ETH, Technoparkstr. 1, 8005 Zürich Telephone, E-mail, Homepage +41 (0) 44 633 79 49, Ayodhya.Tiwari@empa.ch, http://www.tfp.ethz.ch Project- / Contract Number 100964 / 152404 Duration of the Project (from – to) 01.12.2006 – 28.02.2009 Date 08.12.2008 ABSTRACT Flexible Cu(In,Ga)Se2, called CIGS, solar cells are important for a variety of terrestrial applications. This project aims at the development of high efficiency flexible CIGS solar cells on large area (up to 30 x 30 cm 2 ) polyimide foils. All the component layers (Mo by sputtering, CIGS by evaporation, CdS by chemical bath deposition, ZnO/ZnO:Al by sputtering) of the flexible solar cells shall be grown on inline moving substrates. Our CIGS and customised CdS deposition equipments have been developed with emphasis on improving the performance, process reproducibility and large area in-line deposition capabilities. A low temperature CIGS deposition process and controlled Na incorporation are being optimised towards the development of high efficiency flexible solar cells with all in-line. The developed evaporators were evaluated in terms of evaporation profiles and layer thickness and composition across the substrate width were analysed. Reasonable homogeneity was obtained over a substrate width of at least 25 cm. Further the chemical bath deposition equipment for CdS layer was redesigned for large area substrates and optimized for minimal waste products. Alternative electrical back contacts to conventional Mo are developed on flexible polyimide foils. Preferred materials are transparent conducting oxides (ITO) and metal-nitrides covered with a thin buffer layer facilitating tunneling of carriers across the CIGS-back contact interface. The deposition processes have been developed and properties of layers and interfaces have been investigated. Flexible solar cells of 12% have been achieved where both, the front and back electrical contacts are based on transparent conducting oxide layers. In order to overcome the well known problems of the conventional Mo back contact efforts were made to employ Ti/TiN as an alternative back contact because of several attractive features of this system. The R&D work for feasibility study was performed in collaboration with two companies in Switzerland. Preliminary results have shown very much encouraging results as a flexible CIGS solar cell with high efficiency of 13.1% has been achieved with an alternative stacked back contact that offers several advantages for manufacturing as well as for long term performance stability of flexible solar cells. 79/290

Introduction / Project goals The focus of this project is on up-scaling the deposition processes of flexible Cu(In,Ga)Se2, called CIGS, solar cells on polyimide foils with emphasis on improving the performance, process reproducibility and large area deposition capabilities. We have been developing deposition equipment for large area deposition of CIGS and CdS layers using our own designs. These in-house assembled equipments can accommodate substrate size up to 30 x 30 cm 2 , but the area of useful layers in terms of thickness and composition uniformity suitable for solar cell processing will be smaller because of the size of the deposition chambers. Several components of the CIGS deposition system, for example the crucially important linear evaporation sources and substrate heating and moving mechanisms, have been developed by our group through a project partly supported by the Swiss Federal Office of Energy (SFOE): Project Number 100964/151131 (FLEXCIM). The first objective of the project is to further improve the CIGS vacuum deposition equipment as well as the CdS chemical bath deposition equipment to develop solar cells on large area substrates and optimise a process for high efficiency and reliability. The second objective is to develop high efficiency flexible CIGS solar cells on polyimide foils coated with alternative electrical back contacts for CIGS instead of the well established Mo layers. There is four-fold motivation behind the development of flexible CIGS solar cells using alternative materials such as transparent conducting oxides as back contact: i) to overcome the performance instability problem associated with the oxidation of conventional Mo layer; ii) to use the back contact as diffusion barrier against metal impurities and moisture; iii) to provide multi-functionality in solar cell and for futuristic multi-junction (tandem) solar cells; iv) to reduce the thickness of the CIGS absorber by applying back contacts with higher reflectivity than of Mo layer. Successful development of highly efficient CIGS solar cells may solve the problems of degradation of the back contact in moisture, micro-cracking and de-lamination, especially in flexible cells, and open further possibilities for device engineering. Results Evaporation profiles for CIGS deposition During growth of the CIGS absorber layer the relative composition of Cu, In, and Ga varies over a wide range. In order to achieve high quality CIGS and have reasonably big grains, the film has to go through a Cu-rich composition during its crystal formation, i.e. Cu/[In+Ga] > 1. Depending on the evaporation sources setup we have simulated the composition profiles of the layer formation for an inline deposition process. By varying the final Ga composition of the layer for constant Cu content, i.e. varying the [Ga]/[In+Ga], the film sees different strong Cu-excess. Fig. 1 (top) shows the element fluxes of Cu, Ga, and In for different final compositions. One can see that depending on the final Ga-content the film is going through a Cu-rich phase or not. For a Cu-rich growing phase a final composition equal or lower than [Ga]/[In+Ga]=0.3 is needed (Fig. 1 bottom right). This simulation also shows that one has to be careful when interpreting results of solar cells with different final composition since not only the bandgap changes because of different In:Ga ratio, but also the growing history and phase formation differs. Figure 2 shows similar 2D-simulation, which is taking into account the geometry of the line sources which have slightly lower evaporation rates at the edges. Large Area Flexible CIGS, D. Brémaud, ETH Zurich 80/290 2/7

Introduction / Project goals<br />

The focus of this project is on up-scaling the deposition processes of flexible Cu(In,Ga)Se2, called<br />

CIGS, solar cells on polyimide foils with emphasis on improving the performance, process reproducibility<br />

and large area deposition capabilities.<br />

We have been developing deposition equipment for large area deposition of CIGS and CdS layers<br />

using our own designs. These in-house assembled equipments can accommodate substrate size up<br />

to 30 x 30 cm 2 , but the area of useful layers in terms of thickness and composition uniformity suitable<br />

for solar cell processing will be smaller because of the size of the deposition chambers. Several components<br />

of the CIGS deposition system, for example the crucially important linear evaporation sources<br />

and substrate heating and moving mechanisms, have been developed by our group through a project<br />

partly supported by the Swiss Federal Office of Energy (SFOE): Project Number 100964/151131<br />

(FLEXCIM).<br />

The first objective of the project is to further improve the CIGS vacuum deposition equipment as well<br />

as the CdS chemical bath deposition equipment to develop solar cells on large area substrates and<br />

optimise a process for high efficiency and reliability.<br />

The second objective is to develop high efficiency flexible CIGS solar cells on polyimide foils coated<br />

with alternative electrical back contacts for CIGS instead of the well established Mo layers. There is<br />

four-fold motivation behind the development of flexible CIGS solar cells using alternative materials<br />

such as transparent conducting oxides as back contact:<br />

i) to overcome the performance instability problem associated with the oxidation of conventional<br />

Mo layer;<br />

ii) to use the back contact as diffusion barrier against metal impurities and moisture;<br />

iii) to provide multi-functionality in solar cell and for futuristic multi-junction (tandem) solar cells;<br />

iv) to reduce the thickness of the CIGS absorber by applying back contacts with higher reflectivity<br />

than of Mo layer.<br />

Successful development of highly efficient CIGS solar cells may solve the problems of degradation of<br />

the back contact in moisture, micro-cracking and de-lamination, especially in flexible cells, and open<br />

further possibilities for device engineering.<br />

Results<br />

Evaporation profiles for CIGS deposition<br />

During growth of the CIGS absorber layer the relative composition of Cu, In, and Ga varies over a<br />

wide range. In order to achieve high quality CIGS and have reasonably big grains, the film has to go<br />

through a Cu-rich composition during its crystal formation, i.e. Cu/[In+Ga] > 1. Depending on the evaporation<br />

sources setup we have simulated the composition profiles of the layer formation for an inline<br />

deposition process. By varying the final Ga composition of the layer for constant Cu content, i.e. varying<br />

the [Ga]/[In+Ga], the film sees different strong Cu-excess. Fig. 1 (top) shows the element fluxes of<br />

Cu, Ga, and In for different final compositions. One can see that depending on the final Ga-content the<br />

film is going through a Cu-rich phase or not. For a Cu-rich growing phase a final composition equal or<br />

lower than [Ga]/[In+Ga]=0.3 is needed (Fig. 1 bottom right). This simulation also shows that one has to<br />

be careful when interpreting results of solar cells with different final composition since not only the<br />

bandgap changes because of different In:Ga ratio, but also the growing history and phase formation<br />

differs.<br />

Figure 2 shows similar 2D-simulation, which is taking into account the geometry of the line sources<br />

which have slightly lower evaporation rates at the edges.<br />

Large Area Flexible CIGS, D. Brémaud, ETH Zurich<br />

80/290<br />

2/7

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