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Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

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5/6<br />

Large area thin-film silicon cells<br />

The up-scaling path from small area reactor to the large area KAI 1200 reactor of Oerlikon (1.4 m 2 )<br />

goes through an intermediate size, i.e. the KAI-M (45x55 cm 2 electrode size, work done at Oerlikon<br />

and at IMT). The process development of microcrystalline deposition focused this year in exploring the<br />

validity of the effects of ion bombardment and silane depletion on the microcrystalline intrinsic layer<br />

quality. Deposition parameters were adjusted in order to minimize the first and maximize the second.<br />

By doing a significant effort in cell optimization, the efficiency could increased above 8.2% for a 1.3 µm<br />

thick single junction microcrystalline cell deposited at 4 Å/s (Voc=511 mV, FF=73.0%,<br />

Jsc=21.9 mA/cm 2 ).<br />

As far as high rate deposition of microcrystalline silicon, the reduction of the KAI-M inter-electrode gap<br />

distance allowed us to explore higher pressure regime. As a result of these hardware and process<br />

optimization steps, a microcrystalline single junction solar cell (0.25 cm 2 ) with an efficiency of 7.1%<br />

(Voc=503 mV, FF=70.0%, Jsc=20.2 mA/cm 2 ) was obtained at a deposition rate of 1 nm/s (results in the<br />

frame of the OFEN project). Introduction of this cell into a micromorph device led to the highest initial<br />

efficiency of 10.7% (Voc=1.38 V, FF=70.1%, Jsc=11.1 mA/cm 2 ) as displayed in Fig. 5. The cell is current<br />

matched and the light induced degradation has been evaluated to be lower than 12% after 3000 h<br />

of cell degradation, resulting in a stabilized efficiency close to 9.4%. With an optimized process (for the<br />

µc-Si:H) initial efficiencies slightly higher than 11% are expected. Successful transfer of the SiOx intermediate<br />

reflector from small area systems into KAI-M has been achieved which is expected to improve<br />

also the efficiency of micromorph devices fabricated in the KAI-M system. Additional results on<br />

high rate deposition of µc-Si:H may be found in Ref. [2, 3].<br />

Current density (mA/cm 2 )<br />

12<br />

10<br />

8<br />

6<br />

4<br />

2<br />

0<br />

-0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br />

Voltage (V)<br />

Fig. 5: Current-voltage curve of the highest efficiency micromorph tandem cell with the bottom cell<br />

deposited at 1 nm/s in the initial state (�=10.7%, Voc=1.38 V, FF=70.1%, Jsc=11.1 mA/cm 2 ).<br />

Large area cluster deposition systems<br />

The second chamber of our double chamber KAI-M system was also put in operation in 2008. This<br />

configuration allows working easily with different reactor geometry (mainly inter-electrode distance).<br />

The system was also upgraded with several plasma diagnostics systems (developed in the framework<br />

of Athlet, as well as other national projects) such as: peak-to-peak voltage measurement, optical<br />

emission spectroscopy, laser scattering measurement for powder formation monitoring and infrared<br />

absorption spectroscopy for silane depletion/silane consumption measurements. The latter should<br />

then be compared to data obtained by simulation by the University of Patras.<br />

Results on ultra-large area (> 1m 2 )<br />

Even though not the topic of this report, it is worth mentioning the improvements at the industrial level<br />

in this project. In particular the company Oerlikon Solar has been able to demonstrate large area micromorph<br />

module (1.3x1.4 m 2 ) with an initial aperture area efficiency of 9.5% and power up to 128 W.<br />

Characteristics of such a module are plotted on Fig. 6 [4]. Mini-modules with efficiency up to 10.8%<br />

have also been fabricated with the same fabrication equipment.<br />

ATLET, N. Wyrsch, Institut de Microtechnique<br />

67/290

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