Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
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Large area thin-film silicon cells<br />
The up-scaling path from small area reactor to the large area KAI 1200 reactor of Oerlikon (1.4 m 2 )<br />
goes through an intermediate size, i.e. the KAI-M (45x55 cm 2 electrode size, work done at Oerlikon<br />
and at IMT). The process development of microcrystalline deposition focused this year in exploring the<br />
validity of the effects of ion bombardment and silane depletion on the microcrystalline intrinsic layer<br />
quality. Deposition parameters were adjusted in order to minimize the first and maximize the second.<br />
By doing a significant effort in cell optimization, the efficiency could increased above 8.2% for a 1.3 µm<br />
thick single junction microcrystalline cell deposited at 4 Å/s (Voc=511 mV, FF=73.0%,<br />
Jsc=21.9 mA/cm 2 ).<br />
As far as high rate deposition of microcrystalline silicon, the reduction of the KAI-M inter-electrode gap<br />
distance allowed us to explore higher pressure regime. As a result of these hardware and process<br />
optimization steps, a microcrystalline single junction solar cell (0.25 cm 2 ) with an efficiency of 7.1%<br />
(Voc=503 mV, FF=70.0%, Jsc=20.2 mA/cm 2 ) was obtained at a deposition rate of 1 nm/s (results in the<br />
frame of the OFEN project). Introduction of this cell into a micromorph device led to the highest initial<br />
efficiency of 10.7% (Voc=1.38 V, FF=70.1%, Jsc=11.1 mA/cm 2 ) as displayed in Fig. 5. The cell is current<br />
matched and the light induced degradation has been evaluated to be lower than 12% after 3000 h<br />
of cell degradation, resulting in a stabilized efficiency close to 9.4%. With an optimized process (for the<br />
µc-Si:H) initial efficiencies slightly higher than 11% are expected. Successful transfer of the SiOx intermediate<br />
reflector from small area systems into KAI-M has been achieved which is expected to improve<br />
also the efficiency of micromorph devices fabricated in the KAI-M system. Additional results on<br />
high rate deposition of µc-Si:H may be found in Ref. [2, 3].<br />
Current density (mA/cm 2 )<br />
12<br />
10<br />
8<br />
6<br />
4<br />
2<br />
0<br />
-0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br />
Voltage (V)<br />
Fig. 5: Current-voltage curve of the highest efficiency micromorph tandem cell with the bottom cell<br />
deposited at 1 nm/s in the initial state (�=10.7%, Voc=1.38 V, FF=70.1%, Jsc=11.1 mA/cm 2 ).<br />
Large area cluster deposition systems<br />
The second chamber of our double chamber KAI-M system was also put in operation in 2008. This<br />
configuration allows working easily with different reactor geometry (mainly inter-electrode distance).<br />
The system was also upgraded with several plasma diagnostics systems (developed in the framework<br />
of Athlet, as well as other national projects) such as: peak-to-peak voltage measurement, optical<br />
emission spectroscopy, laser scattering measurement for powder formation monitoring and infrared<br />
absorption spectroscopy for silane depletion/silane consumption measurements. The latter should<br />
then be compared to data obtained by simulation by the University of Patras.<br />
Results on ultra-large area (> 1m 2 )<br />
Even though not the topic of this report, it is worth mentioning the improvements at the industrial level<br />
in this project. In particular the company Oerlikon Solar has been able to demonstrate large area micromorph<br />
module (1.3x1.4 m 2 ) with an initial aperture area efficiency of 9.5% and power up to 128 W.<br />
Characteristics of such a module are plotted on Fig. 6 [4]. Mini-modules with efficiency up to 10.8%<br />
have also been fabricated with the same fabrication equipment.<br />
ATLET, N. Wyrsch, Institut de Microtechnique<br />
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