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Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

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Fig.14: TEM cross section microcrystalline absorber layers. Porous or low quality material is found at<br />

the n-i interface in the lower part of the image (left). A buffer layer with lower dilution grows<br />

denser material with better coverage (right). The arrow in the left panel illustrates the growth of<br />

defective material because of colliding growth fronts.<br />

Fig.14 shows that the microcrystalline material in the nucleation region of the intrinsic µc-Si layer at<br />

the n-i interface is not uniformly dense but grows with a significant fraction of voids. This observation<br />

suggests the introduction of a buffer layer with higher amorphous fraction because this is known to<br />

yield denser material and generally results in a better coverage of textured substrates as shown in<br />

Fig.14. A systematic series of cells showed that nucleation layers with a very low dilution should yield<br />

the best results in terms of open circuit voltage and fill factor. However, the beneficial effect of the<br />

buffer layer is then compensated by bad current transport due to the high content of amorphous phase<br />

in the microcrystalline material. Cell optimization must thus consider the trade-off between establishing<br />

a nucleation template with good coverage, and sufficient current transport through the buffer layer<br />

[Sod08B].<br />

3.3.2 Amorphous silicon<br />

The investigations on amorphous silicon solar cells concentrated on the best stabilized efficiencies<br />

with respect to the absorber layer thickness on a given LPCVD-ZnO texture. Fig.15 compares initial<br />

and stabilized parameters. Except for the open circuit voltage which is not strongly affected by the ilayer<br />

thickness, it is observed that lower degradation is normally found for thinner cells. In terms of the<br />

highest stable efficiency a cell with 200 nm thickness is favourable because losses in current collection<br />

become limiting for thinner cells. The stabilized current densities are between 13 and 13.5 mA/cm 2<br />

which is slightly above the limiting value of 12.5 mA/cm 2 which was estimated above. However, it<br />

should be noted that the cells shown in Fig.15 are measured with white paste reflector. In the tandem<br />

application this reflector is absent which reduces the currents by 1.5 to 2 mA/cm 2 (c.f. the stabilized<br />

current of of 11.7 mA/cm 2 in the amorphous top cell shown in Fig 16).<br />

40/290<br />

New processes and device structures for the fabrication of high efficiency thin film silicon photovoltaic modules, C. Ballif, University of Neuchâtel<br />

10/16

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