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Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

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3/6<br />

small and big particles that composes the DSL 18NR-AO paste as a main result of an increase in the<br />

fill factor. From an optical point of view, we have demonstrated that the use of DSL 30NRD-T + DSL<br />

18NR-AO allows preventing light loss within the photo-anode as a consequence from tangent light<br />

scattering [6].<br />

Efficiency (%)<br />

11<br />

10.5<br />

10<br />

9.5<br />

9<br />

0.5 sun<br />

1sun<br />

0.1 sun<br />

10.19<br />

10.00<br />

9.81<br />

10.57<br />

10.43<br />

10.32<br />

10.49<br />

10.35<br />

10.01<br />

10.79<br />

10.74<br />

10.61<br />

10.63<br />

10.44<br />

10.30<br />

9.93<br />

9.68<br />

9.50<br />

EPFL/CCIC EPFL/AO 18NR-T/AO 30NRD/AO Trans/AO AO<br />

Figure 1: Evolution of the conversion efficiency under different incident light intensity as a function of<br />

the different paste studied. (note that spot electrodes of ca. 0.283cm² were herein used and masked<br />

with an aperture of 0.159cm²).<br />

2) Optimization of the photo-voltaic characteristic of C101 dye<br />

The optimization of the photo-anode configuration obtained in accordance with the photo-physical<br />

properties of the C101 dye, we investigated a way to improve the monolayer characteristics. Pressure<br />

and temperature of sensitization are two parameters that govern the adsorption equilibria constant as<br />

well as the kinetic of adsorption. In the term of this first year project, we evaluated the influence of the<br />

temperature of sensitization of the C101 dye at three different temperatures: 60°C, 20°C and 4°C.<br />

Figure 2 shows the evolution of the photo-voltage, photo-current density, fill factor and photon-toelectron<br />

conversion efficiency as a function of the temperature which the cell has been sensitized.<br />

The temperature drastically influences the dye photovoltaic performance. Interestingly, the Voc of the<br />

cell can be tuned linearly from 714 mV, 752 mV to 768 mV in respect to a gradual temperature decrease<br />

from 60°C, 20°C to 4°C, respectively. This comes in turn with a remarkable improvement of<br />

the fill factor from 0.708 to 0.725 while the short circuit current density of the cells slightly increases<br />

from 19.9 mA/cm² to 20.5 mA/cm². A similar tendency was also experienced at lower incident light<br />

intensity, although the gap between the values becomes narrower. As a result from the increase of<br />

the three cell characteristics, the low temperature sensitization approach affords a noteworthy enhancement<br />

in the photon-to-electron conversion efficiency from 10.1 %, 10.9 % to 11.5 %.<br />

Photo-voltage (mV)<br />

770<br />

760<br />

750<br />

740<br />

730<br />

720<br />

710<br />

0 10 20 30 40 50 60<br />

Grafting temperature (°C)<br />

21<br />

20.5<br />

20<br />

19.5<br />

19<br />

Photo-current Photo-current density (mA/cm²)<br />

Fill Factor<br />

0.73<br />

0.725<br />

0.72<br />

0.715<br />

0.71<br />

0.705<br />

0 10 20 30 40 50 60<br />

Grafting temperature (°C)<br />

Fig. 2: Evolution of the cell characteristics (Voc, Jsc, F.F. and �) as a function of the grafting temperature<br />

at 1 sun equivalent light intensity (A.M. 1.5G). The values indicated correspond to an average<br />

value obtained by repetition of the cells. Square cells dimension were 0.152 cm² and masked with an<br />

aperture 1mm larger than the photo-anode.<br />

Robust DSC, M. Graetzel, EPFL<br />

123/290<br />

12<br />

11.5<br />

11<br />

10.5<br />

10<br />

9.5<br />

Conversion efficiency (%)

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