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Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE

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3/9<br />

After optimizing the In2S3 buffer deposition parameters, the CIGS solar cell made on glass substrate<br />

were developed and a maximum efficiency of 14.1% has been achieved. With an aim to develop<br />

flexible solar cell with thermally evaporated In2S3 buffer layer, the knowledge obtained from solar cells<br />

made on glass substrate has been transferred to flexible polyimide substrates.<br />

Scanning electron microscopic (SEM) investigations<br />

The microstructure and surface coverage efficiency of In2S3 buffer layer deposited on CIGS surface<br />

was studied by SEM. Figure 1.1 a and 1.1 b show the plan and cross-section of the polyimide/<br />

Mo/CIGS/(~30nm) In2S3 stack. It was observed that there are some spots where the In2S3 film does<br />

not uniformly cover the rough CIGS surface, this could result in limiting the high cell efficiencies.<br />

Furthermore the presence of intermediate residual Na(F) layer could be a problem between the CIGS<br />

and buffer layer, which originates from the NaF post deposition treatment after CIGS growth.<br />

In order to improve the CIGS surface coverage and remove NaF residuum from the absorber surface,<br />

an additional processing step was included, where the CIGS surface was etched in ammonium<br />

hydroxide solution.<br />

Figure 1.1: Surface morphology of the In2S3 film deposited on CIGS surface (a), and cross-section<br />

micrograph showing the presence of ~30 nm thin In2S3 buffer layer on top of the CIGS film (b).<br />

Solar cell characteristics<br />

The cell parameters of both, the cell with In2S3 and the cell with CdS buffer layer, respectively are<br />

listed in table 1.1. Further the I-V curves of both cells are shown in figure 1.2. It can be seen that due<br />

to the higher band gap of the indium sulfide buffer layer, a higher short circuit current Jsc is achieved<br />

compared to the flexible reference cell with chemical bath deposited CdS buffer layer. However, the fill<br />

factor and open circuit voltage are still below the values of the reference cell. A best cell efficiency of<br />

10.1% was achieved for the flexible CIGS cell with indium sulfide buffer layer. This value is 76% of the<br />

13.2 % efficiency of the reference cell. The result was a project milestone and perhaps the first report<br />

of CdS free flexible CIGS solar cell on polymer with efficiency approaching 10%.<br />

Table 1.1: Photovoltaic parameters of flexible CIGS solar cells with In2S3 and CdS buffer layers.<br />

Voc (mV) Jsc (mAcm -2 ) FF (%) � (%)<br />

In2S3 Buffer 530 31.8 59.6 10.1<br />

CdS reference 632 29.9 69.9 13.2<br />

107/290<br />

ATHLET - Advanced Thin Film Technologies for Cost Effective Photovoltaics, A. N. Tiwari, ETH Zürich

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