Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2009 ... - Bundesamt für Energie BFE
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3/9<br />
After optimizing the In2S3 buffer deposition parameters, the CIGS solar cell made on glass substrate<br />
were developed and a maximum efficiency of 14.1% has been achieved. With an aim to develop<br />
flexible solar cell with thermally evaporated In2S3 buffer layer, the knowledge obtained from solar cells<br />
made on glass substrate has been transferred to flexible polyimide substrates.<br />
Scanning electron microscopic (SEM) investigations<br />
The microstructure and surface coverage efficiency of In2S3 buffer layer deposited on CIGS surface<br />
was studied by SEM. Figure 1.1 a and 1.1 b show the plan and cross-section of the polyimide/<br />
Mo/CIGS/(~30nm) In2S3 stack. It was observed that there are some spots where the In2S3 film does<br />
not uniformly cover the rough CIGS surface, this could result in limiting the high cell efficiencies.<br />
Furthermore the presence of intermediate residual Na(F) layer could be a problem between the CIGS<br />
and buffer layer, which originates from the NaF post deposition treatment after CIGS growth.<br />
In order to improve the CIGS surface coverage and remove NaF residuum from the absorber surface,<br />
an additional processing step was included, where the CIGS surface was etched in ammonium<br />
hydroxide solution.<br />
Figure 1.1: Surface morphology of the In2S3 film deposited on CIGS surface (a), and cross-section<br />
micrograph showing the presence of ~30 nm thin In2S3 buffer layer on top of the CIGS film (b).<br />
Solar cell characteristics<br />
The cell parameters of both, the cell with In2S3 and the cell with CdS buffer layer, respectively are<br />
listed in table 1.1. Further the I-V curves of both cells are shown in figure 1.2. It can be seen that due<br />
to the higher band gap of the indium sulfide buffer layer, a higher short circuit current Jsc is achieved<br />
compared to the flexible reference cell with chemical bath deposited CdS buffer layer. However, the fill<br />
factor and open circuit voltage are still below the values of the reference cell. A best cell efficiency of<br />
10.1% was achieved for the flexible CIGS cell with indium sulfide buffer layer. This value is 76% of the<br />
13.2 % efficiency of the reference cell. The result was a project milestone and perhaps the first report<br />
of CdS free flexible CIGS solar cell on polymer with efficiency approaching 10%.<br />
Table 1.1: Photovoltaic parameters of flexible CIGS solar cells with In2S3 and CdS buffer layers.<br />
Voc (mV) Jsc (mAcm -2 ) FF (%) � (%)<br />
In2S3 Buffer 530 31.8 59.6 10.1<br />
CdS reference 632 29.9 69.9 13.2<br />
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ATHLET - Advanced Thin Film Technologies for Cost Effective Photovoltaics, A. N. Tiwari, ETH Zürich