Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE

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ATHLET Eidgenössisches Departement für Umwelt, Verkehr, Energie und Kommunikation UVEK Bundesamt für Energie BFE Advanced Thin Film Technologies for Cost Effective Photovoltaics Annual Report 2007 Author and Co-Authors D. Brémaud, R. Verma, S. Bücheler, S. Seyrling, A. N. Tiwari Institution / Company ETH Zürich Address Thin Film Physics Group, Technoparkstr. 1, 8005 Zürich Telephone, E-mail, Homepage +41 44 633 79 49, tiwari@phys.ethz.ch, http://www.tfp.ethz.ch Project- / Contract Number ATHLET CIS / FP-2204-Energy-3 Duration of the Project (from – to) 01.01.2006 – 31.12.2009 Date 20.12.07 ABSTRACT The ATHLET project is an integrated project of the European Union involving 24 partners consisting of universities, research institutions and industries working on the topic of Cu(In,Ga)Se2 (called CIGS) and Si based thin film solar cells. The project is divided in several work packages covering diverse topics of solar cells and modules. The Thin Film Physics Group (TFP) of ETH Zurich is participating in two work packages within the integrated EU project with the objective to investigate alternative buffer layers deposited by vacuum evaporation or ultrasonic spray pyrolysis and the developement of high efficiency CIGS solar cells on flexible substrates and for tandem solar cells CIGS solar cells on ITO transparent conducting oxide (TCO) coated glass substrates were developed for their future application in tandem solar cells. We have developed CIGS solar cells with efficiencies up to 13.3%, where both the front and back contacts are TCOs. Physical vapor deposition (PVD) method was employed to deposit In2S3 buffer layers on CIGS absorber with In2S3 powder as source material. The microstructural behavior and chemical composition of the source materials as a function of the time of evaporation have been studied. A significant amount of sulfur loss was detected in coarse powder, while the finer powder was found to be chemically stable. X-ray diffraction (XRD) examination revealed the presence of In2O3 in the coarse powder after 4 min of evaporation. Solar cells made of a buffer layer deposited from fine powder resulted in lower efficiency (8.6%) than that made from coarse powder (11.6%). A maximum efficiency of 12.1% was reached after air annealing of the completed cell. A highly efficient solar cell of 14.1% efficiency was developed with a ~60 nm thin In2S3 buffer layer. At this stage there are problems of reproducibility, especially about the influences of annealing treatments. Further work is necessary to improve the process reliability and to gain understanding of the annealing and light soaking effects. Seite 95 von 288
Seite 96 von 288 Introduction / project objectives Polycrystalline thin film Cu(In,Ga)Se2 (CIGS) solar cells are important because of very high efficiency, long term stable performance, and their potential for low cost generation of solar electricity. The National Renewable Energy Laboratory, USA has reported a world record efficiency of 19.5% [1] for the CIGS solar cells grown on glass substrates and several groups including ETHZ have achieved efficiencies exceeding 16% on glass substrates. The objectives of the work packages, we are involved, include: � Development of high efficiency lightweight and flexible CIGS solar cells on polymer foils and improvement in processes for highest record efficiencies. � Development of alternative processes towards simple and low cost manufacturing of high efficiency flexible solar cells. � Development of critical cell components of CIGS tandem solar cells for next generation of more efficient solar cells. � Development of a new spray technology incorporating ultrasonic fine and condensed mist forming for alternative buffer layers In the first reporting, we described, how the ETH group succeeded in developing 14.1% efficiency solar cell. The CIGS layers were grown by a vacuum evaporation process on static substrates with good reproducibility. The development of ultrasonic spray pyrolysis (USP) equipment and the first results were also described in details in the first report and work is going on. This year the research focus was placed on the development of InxSy alternative buffer layer deposition process by a physical vapour deposition (PVD) method and continuation of the work on CIGS solar cells on transparent conducting oxides (TCO) for tandem solar cell applications. Solar cells with of CBD-CdS buffer layer are considered as a standard although other materials grown by CBD have been employed in CIGS solar cells. However, there are some limiting issues associated with the use of CdS as buffer layer and CBD technique. CdS has an optical band gap (Eg) of 2.48 eV which causes some optical absorption losses in the shorter wavelength region of the solar spectrum. Moreover, Cd-free CIGS solar cells are often desired for some environmental reasons. In addition, CBD is a non-vacuum process which makes it incompatible to vacuum based in-line production of the solar modules on industrial scale. Indium sulfide has a great potential as an alternative buffer layer to conventional CdS buffer. The optical band gap of In2S3 thin film strongly depends on the method of preparation and can vary from 2.0-3.0 eV [3]. Various groups have prepared In2S3 films by different methods like modulated flux deposition [4], atomic layer epitaxy [5], atomic layer deposition (ALD) [6], reactive evaporation [7], and thermal evaporation [3]. Out of these, In2S3 buffer layers deposited by ALD produced a record efficiency of 16.4% on a small area of 0.1 cm 2 [8]. However, ALD is a slow, batch-to-batch process, and expensive to upscale for large area module production, while the physical vapor deposition (PVD) methods hold their high industrial relevance. A cell made of PVD-In2S3 has resulted in maximum efficiency of 14.8% [9]. The cell efficiency depends strongly on the method of evaporation, source material and post-deposition annealing treatments [3]. For an objective to develop flexible CIGS solar cells with alternative buffer layers we have been investigating the deposition of In2S3 by a PVD method, and especially the evaporated source materials and In2S3 layers on soda lime glass (SLG) substrates. The In2S3 buffer layers were used to develop CIGS solar cell and the effects of vacuum annealing treatments on the photovoltaic properties have been investigated. Work and results PVD grown In2S3 buffer layer For the development of the solar cells CIGS layers were grown on Mo/SLG by coevaporation of constituent elements with 3-stage process. The Indium sulfide buffer layer was deposited on CIGS/Mo/SLG substrates in a high vacuum evaporation system by using In2S3 compound as a source material. Two different types of In2S3 powders, powder-A and -B, obtained from different suppliers, were used. The powder-A having finer particle (size ~2 µm) and narrow distribution in particle size was dark red in color. On the other hand, the powder-B (light red color) was found to be coarser (size 5- 10 µm) than powder-A with a moderate distribution in particle size. Thereafter, a window layer of ATHLET, D. Brémaud, ETH Zurich 2/9
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Forschung, April 2008 Programm Phot
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Programm Photovoltaik Ausgabe 2008
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T. Meyer ORGAPVNET: Coordination Ac
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PROGRAMM PHOTOVOLTAIK Eidgenössisc
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1. Programmschwerpunkte und anvisie
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Ein neues KTI-Projekt Flexible Phot
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In einem neuen, durch den Axpo Natu
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Performanz und Energieproduktion vo
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ERGÄNZENDE PROJEKTE UND STUDIEN En
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in diesem Projekt für die Koordina
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5. Pilot- und Demonstrationsprojekt
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Produktionskapazität von insgesamt
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[26] H. Häberlin, L. Borgna, D. Gf
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[89] Konzept der Energieforschung d
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Solarzellen C. Ballif, J. Bailat, F
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Département fédéral de l’envir
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3/9 Fig. 1: Refractive index n and
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5/9 V oc [mV] 940 920 900 880 860 8
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7/9 Fig. 5: Top) SEM micrographs of
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9/9 Acknowledgements The co-workers
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Seite 40 von 288 Introduction and f
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Seite 42 von 288 Introduction / Pro
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Page 89 and 90: Seite 86 von 288 Intensity / arb. u
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Die wichtigsten erreichten Ziele de
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Energy Center (EC) der EPFL Univers
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Für 2008 ist in Zusammenarbeit mit
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BIPV-CIS Eidgenössisches Departeme
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3/3 Bewertung 2007 und Ausblick 200
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3/9 Service measurements In 2007 a
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5/9 Type of meas. Direct with c-Si
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7/9 c-Si reference cell for the mea
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9/9 � 4 energy rating comparison
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1. Traceable performance measuremen
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The following list shows the measur
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data sets. The indoor data sets con
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The blind round-robin proved that o
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Einleitung / Projektziele Herstelle
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Abb. 1, und deren Mittelwert für d
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Aus Gleichung (1) ergeben sich der
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Abb. 7: Abhängigkeit des Wirkungsg
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Der Rechengang zu Abb.8 läuft wie
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Wie erwartet ist der Jahresmittelwe
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Projektziele für 2007 � Ununterb
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Generator-Korrekturfaktor k G in %
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WR-Defekte pro WR-Betriebsjahr 0.8
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Nationale / internationale Zusammen
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Einleitung / Projektziele Dezentral
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BON: Betrieb ohne Netz oder USV-Bet
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An einem Workshop mit EWs in Kalifo
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Challenges The liberalisation of th
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W 900 800 700 600 500 400 300 200 1
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PV-BUK Eidgenössisches Departement
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3/6 häufigsten traten jedoch Gesam
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5/6 Die Gespräche mit verschiedene
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Eidgenössisches Departement für U
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3/10 Tab. 1: Overview of the types
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5/10 Tab. 2: Key parameters of the
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7/10 horizontal surface (kWh/m 2 )
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9/10 6. Conclusion and Outlook The
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3/9 Fig.2: Photograph of SiO2:CdS s
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5/9 Fig. 4: Photoluminescence spect
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7/9 In general, the performance of
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9/9 Conclusions � A large Stokes
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Einleitung / Projektziele Solaranla
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Internationale Koordination P. Hüs
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Kurzbeschrieb des Projekts Task 1 u
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Trends Report Basierend auf den Dat
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Einleitung / Projektziele Die Ziele
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Case Studies Als Ergänzung zu den
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3/10 Ziele 2007 Die Ziele der REPIC
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5/10 Die restlichen 13 Projektantr
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7/10 Stand der technischen REPIC Pr
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9/10 Förderung der Solarenergie f
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3/6 Les avantages pour le consommat
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5/6 SOUS-TÂCHE 4 « Information et
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3/3 Turbidity climatology Turbidity
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Einleitung / Projektziele Normenarb
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IEC 62548 Installation and Safety R
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Referenzen Eine vollständige Liste
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Introduction and Goals PV ERA NET i
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WP2: Strategy Issues: The main acti
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A dedicated transnational call “P
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Databases have been developed for o
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