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Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE

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LARCIS<br />

Eidgenössisches Departement <strong>für</strong><br />

Umwelt, Verkehr, <strong>Energie</strong> und Kommunikation UVEK<br />

<strong>Bundesamt</strong> <strong>für</strong> <strong>Energie</strong> <strong>BFE</strong><br />

Large-Area CIS Based Solar Modules for Highly<br />

Productive Manufacturing<br />

Annual Report 2007<br />

Author and Co-Authors D. Brémaud, A. N. Tiwari<br />

Institution / Company ETH Zürich<br />

Address Thin Film Physics Group, Technoparkstr. 1, 8005 Zürich<br />

Telephone, E-mail, Homepage +41 44 633 79 49, tiwari@phys.ethz.ch, http://www.tfp.ethz.ch<br />

Project- / Contract Number SES66-CT-2005-019757 / FP6-019757<br />

Duration of the Project (from – to) 01.11.2005 – 31.10.2009<br />

Date 31.01.<strong>2008</strong><br />

ABSTRACT<br />

This European collaborative project within the FP-6 EU program involves 6 universities and 4<br />

industries working together towards the development of large area Cu(In,Ga)Se2 (CIGS) based thin<br />

film solar modules for highly productive manufacturing. The project will improve the device<br />

performance and manufacturing technologies for low-cost, more stable, more efficient solar modules.<br />

In this project vacuum evaporation and electrodeposition approaches are used for absorber<br />

deposition and other components of the solar cells are improved. Important objectives of the overall<br />

project are manufacture of CIGS by co-evaporation, application of cost-effective methods and<br />

development of alternative buffer and back contact layers for large are CIGS.<br />

To meet the above mentioned objectives, research and development (R&D) work of the ETH group is<br />

directed on the development of alternative back contacts for improvement of efficiency, stability and<br />

to explore the possibility of reducing the CIGS absorber layer thickness. Another R&D activity of the<br />

ETH group is to modify the CIS absorber in such a way that a separate deposition of the buffer layer<br />

could be avoided.<br />

In order to develop alternative (to Mo) electrical back contacts providing multi-functionality we have<br />

investigated ZrN as possible candidate because of its physical and chemical properties. A thin layer<br />

of MoSe2, which is known to facilitate ohmic transport of carriers between CIGS and back contact,<br />

was applied prior to CIGS deposition. The influence of the MoSe2 intermediate layer was<br />

investigated. We have successfully developed cells with efficiencies up to almost 14% by using postdeposition<br />

Na incorporation method. The achieved efficiencies are comparable to the efficiencies with<br />

conventional 1 micron thick Mo layer or on TiN. SIMS measurements were also performed to<br />

investigate some inconsistencies observed on TiN and reported in the previous report.<br />

The microstructural behavior and the photovoltaic properties of different Na incorporation methods<br />

have also been investigated. The results show that Na influences the grain size of the CIGS layer, if<br />

present during growth, but post-deposition incorporation gives better photovoltaic properties for<br />

deposition at low substrate temperatures.<br />

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