Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
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LARCIS<br />
Eidgenössisches Departement <strong>für</strong><br />
Umwelt, Verkehr, <strong>Energie</strong> und Kommunikation UVEK<br />
<strong>Bundesamt</strong> <strong>für</strong> <strong>Energie</strong> <strong>BFE</strong><br />
Large-Area CIS Based Solar Modules for Highly<br />
Productive Manufacturing<br />
Annual Report 2007<br />
Author and Co-Authors D. Brémaud, A. N. Tiwari<br />
Institution / Company ETH Zürich<br />
Address Thin Film Physics Group, Technoparkstr. 1, 8005 Zürich<br />
Telephone, E-mail, Homepage +41 44 633 79 49, tiwari@phys.ethz.ch, http://www.tfp.ethz.ch<br />
Project- / Contract Number SES66-CT-2005-019757 / FP6-019757<br />
Duration of the Project (from – to) 01.11.2005 – 31.10.2009<br />
Date 31.01.<strong>2008</strong><br />
ABSTRACT<br />
This European collaborative project within the FP-6 EU program involves 6 universities and 4<br />
industries working together towards the development of large area Cu(In,Ga)Se2 (CIGS) based thin<br />
film solar modules for highly productive manufacturing. The project will improve the device<br />
performance and manufacturing technologies for low-cost, more stable, more efficient solar modules.<br />
In this project vacuum evaporation and electrodeposition approaches are used for absorber<br />
deposition and other components of the solar cells are improved. Important objectives of the overall<br />
project are manufacture of CIGS by co-evaporation, application of cost-effective methods and<br />
development of alternative buffer and back contact layers for large are CIGS.<br />
To meet the above mentioned objectives, research and development (R&D) work of the ETH group is<br />
directed on the development of alternative back contacts for improvement of efficiency, stability and<br />
to explore the possibility of reducing the CIGS absorber layer thickness. Another R&D activity of the<br />
ETH group is to modify the CIS absorber in such a way that a separate deposition of the buffer layer<br />
could be avoided.<br />
In order to develop alternative (to Mo) electrical back contacts providing multi-functionality we have<br />
investigated ZrN as possible candidate because of its physical and chemical properties. A thin layer<br />
of MoSe2, which is known to facilitate ohmic transport of carriers between CIGS and back contact,<br />
was applied prior to CIGS deposition. The influence of the MoSe2 intermediate layer was<br />
investigated. We have successfully developed cells with efficiencies up to almost 14% by using postdeposition<br />
Na incorporation method. The achieved efficiencies are comparable to the efficiencies with<br />
conventional 1 micron thick Mo layer or on TiN. SIMS measurements were also performed to<br />
investigate some inconsistencies observed on TiN and reported in the previous report.<br />
The microstructural behavior and the photovoltaic properties of different Na incorporation methods<br />
have also been investigated. The results show that Na influences the grain size of the CIGS layer, if<br />
present during growth, but post-deposition incorporation gives better photovoltaic properties for<br />
deposition at low substrate temperatures.<br />
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