Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
3/5 Description of the process flow: The demo unit is built to illustrate 3 steps of typical wafer handling in real production environment. 1) The singulation 2) Wafer Quality Control and Sorting 3) The cassetting or carrier loading The overall cost structure of wafering has been estimated. It appears clearly that silicon (raw material) is the dominant cost factor, followed in second position by the slicing consumables. 100% 80% 60% 40% 20% 0% 28% 68% (156, 200um WT, 160um KL) 2% 2% 17% 81% 1% 1% 12% 86% Si @ 50 €/kg Si @ 100 €/kg Si @ 150 €/kg 1% 1% Running Consumable Equipment Si Material Figure 3: Overall cost structure for wafering with three different Silicon raw material market prices 29% 7% 4% 86% Figure 4: Relative importance of raw material usage factors Thickness Wire Grit Pitch Within the slicing consumables, the cost of new slurry (abrasive SiC + coolant) accounts for more than 50%. Because the slurry plays a dominant role in cost of consumables, it becomes important to adapt recycling strategies of used slurry. Best overall cost savings in slurry consumables is obtained by combining external service (out-sourcing), and in-house equipment for slurry recycling. This way, endusers can easily reach 60% or more slurry cost reductions. BiThink, P. Nasch, Applied Materials Switzerland Seite 71 von 288
Seite 72 von 288 Table 5 summarizes the achievements in BITHINK by comparing the situation at start of project and the results obtained. Start of BITHINK End of BITHINK Wafer thickness �m 240 120 W ire diameter �m 160 120 Grit size �m 13 9 Production yield % 95 90 Raw material usage m 2 /kg 0.98 1.53 Cost €/m 2 102 65 g/Wp 7.87 5.02 €/W p 0.79 0.50 Table 5: 36% Cost reduction (€/Wp) achieved in BITHINK by reducing wafer thickness, wire diameter, and grit size. Cost calculations are made assuming 100€/kg of poly-silicon, 13% solar conversion efficiency, and a solar constant of 1 kW/m 2 . When comparing BITHINK achievements in terms of g/Wp obtained with market roadmap and trends (Figure 6), one can see that the present results are anticipating the market situation in 2 years from now. Wafer Thickness (microns) Product Roadmap 250 200 150 100 50 0 240 10.5 160 200 7.3 140 160 6.1 120 120 4.3 2004 2006 2008 2010 Time E500SD-B Start of BITHINK project (end 2004) E500SD-B/5 End of BITHINK project (end 2007) E500SD-B/6 Figure 6: European market trend survey and roadmap BiThink, P. Nasch, Applied Materials Switzerland Wafer thickness Wire diameter g / Wp 100 WP1 Apollo achievements within the BITHINK project: 5g/Wp 10 5 0 Grams per Wp 4/5
- Page 24 and 25: Produktionskapazität von insgesamt
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- Page 30 and 31: Solarzellen C. Ballif, J. Bailat, F
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- Page 40: 9/9 Acknowledgements The co-workers
- Page 43 and 44: Seite 40 von 288 Introduction and f
- Page 45 and 46: Seite 42 von 288 Introduction / Pro
- Page 47 and 48: Seite 44 von 288 Results The amorph
- Page 49 and 50: Seite 46 von 288 Collaborations IMT
- Page 51 and 52: Seite 48 von 288 Introduction / Pro
- Page 53 and 54: Seite 50 von 288 High efficiency so
- Page 55 and 56: Seite 52 von 288 Towards low costs
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- Page 62 and 63: 5/6 Large area cluster deposition s
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- Page 66 and 67: 3/6 Results Defects characterizatio
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- Page 73: Seite 70 von 288 Summary of Applied
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- Page 82 and 83: 5/7 Testing of thickness, chemical
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- Page 89 and 90: Seite 86 von 288 Intensity / arb. u
- Page 92 and 93: LARCIS Eidgenössisches Departement
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- Page 100 and 101: 3/9 ZnO:Al/ZnO was deposited by rf-
- Page 102 and 103: 5/9 Figure 4: XRD pattern of powder
- Page 104 and 105: 7/9 PBDVA temp [°C] 100 200 250 Bu
- Page 106: 9/9 National and international coll
- Page 109 and 110: Introduction / Project Goals Thin f
- Page 111 and 112: Introduction The work to be reporte
- Page 113 and 114: Ongoing Work and Results 2007 Dye d
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- Page 117 and 118: Introduction Dye-sensitized solar c
- Page 119 and 120: Figure 2: Upper panel: isodensity p
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Seite 72 von 288<br />
Table 5 summarizes the achievements in BITHINK by comparing the situation at start of project and<br />
the results obtained.<br />
Start of<br />
BITHINK<br />
End of<br />
BITHINK<br />
Wafer thickness �m 240 120<br />
W ire diameter �m 160 120<br />
Grit size �m 13 9<br />
Production yield % 95 90<br />
Raw material usage m 2 /kg 0.98 1.53<br />
Cost €/m 2<br />
102 65<br />
g/Wp 7.87 5.02<br />
€/W p 0.79 0.50<br />
Table 5: 36% Cost reduction (€/Wp) achieved in BITHINK by reducing wafer thickness, wire diameter,<br />
and grit size. Cost calculations are made assuming 100€/kg of poly-silicon, 13% solar conversion efficiency,<br />
and a solar constant of 1 kW/m 2 .<br />
When comparing BITHINK achievements in terms of g/Wp obtained with market roadmap and trends<br />
(Figure 6), one can see that the present results are anticipating the market situation in 2 years from<br />
now.<br />
Wafer Thickness (microns)<br />
Product Roadmap<br />
250<br />
200<br />
150<br />
100<br />
50<br />
0<br />
240<br />
10.5<br />
160<br />
200<br />
7.3<br />
140<br />
160<br />
6.1<br />
120<br />
120<br />
4.3<br />
2004 2006<br />
<strong>2008</strong><br />
2010<br />
Time<br />
E500SD-B<br />
Start of<br />
BITHINK<br />
project<br />
(end 2004)<br />
E500SD-B/5<br />
End of<br />
BITHINK<br />
project<br />
(end 2007)<br />
E500SD-B/6<br />
Figure 6: European market trend survey and roadmap<br />
BiThink, P. Nasch, Applied Materials Switzerland<br />
Wafer<br />
thickness<br />
Wire<br />
diameter<br />
g / Wp<br />
100<br />
WP1 Apollo achievements<br />
within the<br />
BITHINK project:<br />
5g/Wp<br />
10<br />
5<br />
0<br />
Grams per Wp<br />
4/5
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