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Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE

Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE

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Seite 64 von 288<br />

Figure 3: Crack depth characteristic length (l/b) (top) and average roughness (bottom), sorted in<br />

crack depth ascending order. The diamonds on the left represent the sample cut with the finest abrasive,<br />

the ones on the right represent the cut with the coarsest abrasive. Squares are cut with small,<br />

triangles with standard and stars with coarse abrasive [1].<br />

As crack depth distribution and roughness are correlated with each other, the measurement of<br />

roughness provides a good indication on the sawing quality in a non destructive way. Unfortunately, this<br />

measurement method is global and gives an average crack depth. On the opposite, the strength of the<br />

wafer depends on the depth of the most important crack, which is by its nature not measured in this way.<br />

Mechanical testing<br />

Different bending test configurations were analysed by finite element modelling, see Fig. 4 and Fig. 5.<br />

Two examples of the geometries are presented in Fig. 4 and the results of the respective maximum<br />

principal stress are given in Fig. 5. As expected, line bending and point bending test results are<br />

significantly different. Considering the point ring test in Fig. 5 (a), the area with the maximum stress is<br />

localised at the very centre of the wafer. Therefore, only the strength in the centre of the wafer and at<br />

the vicinity of the punch is tested. The 4-points test in Fig. 8 (b), the edges are also under stress and<br />

the strength value would also take into account defect at the edges. Hence, the final choice of the test<br />

will be guided by the goal of the fracture test.<br />

(a) (b)<br />

Figure 4: Example of 2 types of tested geometries (a) point bending test and (b) 4 points bend.<br />

(a)<br />

Figure 5: Finite element results of the two examples of tested geometries (a) point bending test and<br />

(b) 4 points bend. In red the maximum of the maximal principal stress and in blue location were the<br />

stress is close to 0.<br />

SIWIS: Ultra Thin Silicon Wafer Sawing by Multi-Wire Sawing, A. Bidiville, Empa<br />

(b)<br />

4/6

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