Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
5/6 Since the first publication of our amphoteric interface recombination model [3] and its first presentation at the NUMOS workshop [4], we applied it effectively for emitter and back surface field layer stack optimization [5]. As an example, Fig. 5 shows the measured (symbols) symmetric passivation including fits with our model (lines) of the same wafer, first with thicker intrinsic amorphous silicon (grey), then with the emitter layer stack (blue) and finally with the back surface field layer stack (yellow and red) (see again Fig. 1a to know the heterojunction solar cell structure). From Fig. 5 it can be seen that the back surface field layer stack induced initially (yellow) a high density of interface defects. Improved layer growth then leads to low interface defect densities while keeping the high field effect passivation of the former layer (red). Fig. 5: Intrinsic, emitter and back surface field layer stack lifetime curves. Their interpretation serves for fast device development. Textured crystalline silicon minimizes front surface reflection losses by geometrical light trapping, resulting in a potential current gain of almost 15%. However, while for flat crystalline silicon wafers it is sufficient to just remove the native oxide on top of them before amorphous silicon layer growth, textured crystalline Si wafers have to be cleaned before. Shortly after this project started we succeeded in cleaning our textured wafers in another IMT research group’s laboratory. Fig. 6 shows how the initially achieved textured heterojunction solar cell results could in the meanwhile be improved, first by adapting the back surface field layer stacks growth conditions to the surface texture and then by modifying the surface herself, such as to reach an open-circuit voltage of 700 mV [6]. Except for the company Sanyo, these are among the first cells fabricated in research laboratory exceeding the 700 mV on textured wafers. Fig. 6: Improvement of textured silicon heterojunction solar cells. THIFIC, S. Olibet, IMT Neuchâtel Seite 45 von 288
Seite 46 von 288 Collaborations IMT is active in a collaboration on a national level with the EPFL for advanced transmission electron microscopy (TEM) sample preparation, supporting the textured heterojunction solar cell improvement. In addition, international “informal” collaboration are conducted with the German Hahn-Meitner-Institut (HMI), the Japanese National Institute of Advanced Industrial Science and Technology (AIST) and the US-American National Renewable Energy Laboratory (NREL). Evaluation 2007 and Outlook 2008 THIFIC was successfully launched in mid-2007. From the beginning of the project, we pursued the amorphous/crystalline silicon interface recombination modeling for fast heterojunction solar cell single process step analysis and improvement. Textured wafers can now be cleaned and therefore the same kind of lifetime measurement assisted layer development is performed. Up to now, a textured silicon heterojunction solar cell with an open-circuit voltage of 700 mV is achieved. Despite the current gain from the textures geometrical light-trapping, this cell’s efficiency remains, with 17%, lower than the best one on flat silicon (19%) because of its low fill factor. Fig. 7 illustrates that this fill factor loss is partly caused by the texture based surface increase on same sized cells as compared to flat cells. For a flat small cell doubling the surface leads to a relative fill factor loss of more than 10% because of series resistance due to the lacking front metal grid. Worth recognizing positively too in Fig. 7 is that the open-circuit voltage is even higher when quadrupling the textured solar cells size. Therefore the most urgent step to take at present in our silicon heterojunction solar cell processing is the development of a front contact metallization. Actually three different metallization schemes are under test. Shortly they will reach the application phase to solar cells and will then permit us to validate our first results also on larger solar cells. Fig. 7: Series resistance losses in small sized textured cells without front metal grid. References [1] S. Olibet, E. Vallat-Sauvain, C. Ballif: Effect of light induced degradation on passivating properties of a-Si:H layers deposited on crystalline Si, Proceedings of the 21st EU-PVSEC, Dresden, Germany, p.1366, 2006. [2] L. Fesquet, S. Olibet, E. Vallat-Sauvain, A. Shah, C. Ballif: High quality surface passivation and heterojunction fabrication by VHF-PECVD deposition of amorphous silicon on crystalline Si: Theory and experiments, to be published in the Proceedings of the 22th EU-PVSEC, Milano, Italy, 2007. [3] S. Olibet, E. Vallat-Sauvain and C. Ballif: Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds, Physical Review B 76, 035326, 2007. [4] S. Olibet, E. Vallat-Sauvain, C. Ballif, L. Fesquet: Recombination through amphoteric states at the amorphous/crystalline silicon interface: modelling and experiment, Proceedings of NUMOS-workshop (Numerical modelling of thin film solar cells), Gent, Belgium, p. 141, 2007. [5] S. Olibet, E. Vallat-Sauvain, C. Ballif, L. Korte, L. Fesquet: Silicon Solar Cell Passivation using Heterostructures, Proceedings of the 17 th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, Vail, Colorado USA, p. 130, 2007. [6] S. Olibet, E. Vallat-Sauvain, C. Ballif, L. Korte, L. Fesquet: Heterojunction solar cell efficiency improvement on various c-Si substrates by interface recombination modelling, To be presented at the PVSEC-17, Fukuoka, Japan, 2007. THIFIC, S. Olibet, IMT Neuchâtel 6/6
- Page 1: Forschung, April 2008 Programm Phot
- Page 4 and 5: Programm Photovoltaik Ausgabe 2008
- Page 6 and 7: T. Meyer ORGAPVNET: Coordination Ac
- Page 8 and 9: PROGRAMM PHOTOVOLTAIK Eidgenössisc
- Page 10 and 11: 1. Programmschwerpunkte und anvisie
- Page 12 and 13: Ein neues KTI-Projekt Flexible Phot
- Page 14 and 15: In einem neuen, durch den Axpo Natu
- Page 16 and 17: Performanz und Energieproduktion vo
- Page 18 and 19: ERGÄNZENDE PROJEKTE UND STUDIEN En
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- Page 22 and 23: 5. Pilot- und Demonstrationsprojekt
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- Page 26 and 27: [26] H. Häberlin, L. Borgna, D. Gf
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- Page 30 and 31: Solarzellen C. Ballif, J. Bailat, F
- Page 32 and 33: Département fédéral de l’envir
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- Page 36 and 37: 5/9 V oc [mV] 940 920 900 880 860 8
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- Page 40: 9/9 Acknowledgements The co-workers
- Page 43 and 44: Seite 40 von 288 Introduction and f
- Page 45 and 46: Seite 42 von 288 Introduction / Pro
- Page 47: Seite 44 von 288 Results The amorph
- Page 51 and 52: Seite 48 von 288 Introduction / Pro
- Page 53 and 54: Seite 50 von 288 High efficiency so
- Page 55 and 56: Seite 52 von 288 Towards low costs
- Page 58 and 59: Eidgenössisches Departement für U
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- Page 62 and 63: 5/6 Large area cluster deposition s
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- Page 66 and 67: 3/6 Results Defects characterizatio
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- Page 73 and 74: Seite 70 von 288 Summary of Applied
- Page 75 and 76: Seite 72 von 288 Table 5 summarizes
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- Page 82 and 83: 5/7 Testing of thickness, chemical
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- Page 87 and 88: Seite 84 von 288 Introduction / Pro
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5/6<br />
Since the first publication of our amphoteric interface recombination model [3] and its first presentation<br />
at the NUMOS workshop [4], we applied it effectively for emitter and back surface field layer stack<br />
optimization [5]. As an example, Fig. 5 shows the measured (symbols) symmetric passivation including<br />
fits with our model (lines) of the same wafer, first with thicker intrinsic amorphous silicon (grey),<br />
then with the emitter layer stack (blue) and finally with the back surface field layer stack (yellow and<br />
red) (see again Fig. 1a to know the heterojunction solar cell structure). From Fig. 5 it can be seen that<br />
the back surface field layer stack induced initially (yellow) a high density of interface defects. Improved<br />
layer growth then leads to low interface defect densities while keeping the high field effect passivation<br />
of the former layer (red).<br />
Fig. 5: Intrinsic, emitter and back surface field layer stack lifetime curves. Their interpretation serves<br />
for fast device development.<br />
Textured crystalline silicon minimizes front surface reflection losses by geometrical light trapping, resulting<br />
in a potential current gain of almost 15%. However, while for flat crystalline silicon wafers it is<br />
sufficient to just remove the native oxide on top of them before amorphous silicon layer growth, textured<br />
crystalline Si wafers have to be cleaned before. Shortly after this project started we succeeded<br />
in cleaning our textured wafers in another IMT research group’s laboratory. Fig. 6 shows how the initially<br />
achieved textured heterojunction solar cell results could in the meanwhile be improved, first by<br />
adapting the back surface field layer stacks growth conditions to the surface texture and then by modifying<br />
the surface herself, such as to reach an open-circuit voltage of 700 mV [6]. Except for the company<br />
Sanyo, these are among the first cells fabricated in research laboratory exceeding the 700 mV<br />
on textured wafers.<br />
Fig. 6: Improvement of textured silicon heterojunction solar cells.<br />
THIFIC, S. Olibet, IMT Neuchâtel Seite 45 von 288