Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE
7/9 Fig. 5: Top) SEM micrographs of ZnO surface. Bottom) Bright Field TEM cross-section micrographs of �c-Si:H pin on substrates treated with increasing plasma treatment time (Left 0 min // Middle 40 min // Right 80 min). For 40 min of treatment, the cracks do not cross completely through the p-i-n device (compare with sample t=0min), but only begin after the first third of i-layer a) b) Fig. 6: a) sketch of silicon growth on rough ZnO: cracks are located above the valleys between the substrate’s pyramids. b) corresponding equivalent electrical circuit for µc-Si:H solar cells Characterization tools and Laboratory infrastructure The effort undertaken in 2005 and 2006 to improve the laboratory infrastructure in terms of caracterization systems and processing tools has been continued. � An Hall effect setup has been upgraded with new electronics to allow faster and more accurate caracterization of the mobility in TCO's � A set-up was refurbished to allow a measurement of the TCO’s resistance as function of temperature (10-350°K) � Acquisition software and hardware for spectral response and IV curve measurement have been continuously improved � The new large area PECVD cluster system was taken into operation (Fig. 7). This system is equipped with two KAI M plasma boxes and is fully automated. All the hardware and software have been developed at IMT. The system is now used for the fabrication of layers and devices. It is user friendly and its automated mode makes it now a choice research tool for the next projects. Thin film silicon solar cells: advanced processing and characterization, C. Ballif, IMT Seite 35 von 288
Seite 36 von 288 Fig. 7: View of the new fully automated cluster system at IMT. One chamber is operational whereas the second plasma box is being installed at the time of writing this report. Collaboration and synergies with other projects/institutes IMT continues to be involved into the European projects ATHLET and FLEXCELLENCE. A strong synergy is realized between all these projects and this running SFOE project, with indirect benefits for companies such as OC Oerlikon and VHF-Technologies. A project (1.3.2006-28.2.2008) with the Danish company “Photosolar” financed by Energienet.dk continues to allow synergy for nip devices development. Regular academic contacts/scientific and sample exchanges have been maintained throughout 2007 both with national (CRPP-EPFL, EMPA, HE-Arc,..) and international (University of Ljubljana, University of Patras, IPV Juelich, Academy of Science of Prague, ECN….). IMT was one of the instigators of the Swiss thin Film PV project, coordinated now by EMPA (Sponsored by CCEM-CH and Swiss Eletric Research). One Phd. student performed measurements at HMI in Berlin. One IMT Phd. student stayed for six months at NREL (Golden, CO, US) and developed new technique for thin film Si analyses. In 2007, IMT organized two “Thin film PV schools” for industries. These schools last 5-9 days and offer an in-depth introduction to the science and technology of thin film silicon. Evaluation for 2007 / perspectives for 2008 2007 has been a fruitful year as it has allowed both the introduction of new concepts in the thin film silicon devices (e.g. SiOX intermediate reflector) and a much better understanding of the critical interaction between the substrate morphology and the PECVD thin film growth. This knowledge is now useful for virtually all thin film silicion devices, prepared both on glass and plastic. In general, we have now much better tools (receipts, processes, TCO’s, backreflector) in hands to fabricate high efficiency devices on a variety of different TCO's or substrates, and this with different device concepts. In particular, micromorph solar cells with initial efficiency above 12% can be routinely prepared and this can be achieved either with devices with a high Voc and FF or with a high current. The reasons for the difficulty to achieve simultaneously both high VOC FF and current are now better understood and give clear guidelines for the next steps. In the next years, the laboratory will continue the upgrade of its infrastructure with the introduction of new state-of-the-art multi chamber cluster systems (small area systems, with up to 7 chambers) allowing the introduction of more innovative layers and processes. In parallel, it will continue its work with the development of high efficiency devices and development of processes which will be relevant for the next generation production lines based on thin film silicon. Thin film silicon solar cells: advanced processing and characterization, C. Ballif, IMT 8/9
- Page 1: Forschung, April 2008 Programm Phot
- Page 4 and 5: Programm Photovoltaik Ausgabe 2008
- Page 6 and 7: T. Meyer ORGAPVNET: Coordination Ac
- Page 8 and 9: PROGRAMM PHOTOVOLTAIK Eidgenössisc
- Page 10 and 11: 1. Programmschwerpunkte und anvisie
- Page 12 and 13: Ein neues KTI-Projekt Flexible Phot
- Page 14 and 15: In einem neuen, durch den Axpo Natu
- Page 16 and 17: Performanz und Energieproduktion vo
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- Page 26 and 27: [26] H. Häberlin, L. Borgna, D. Gf
- Page 28 and 29: [89] Konzept der Energieforschung d
- Page 30 and 31: Solarzellen C. Ballif, J. Bailat, F
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- Page 36 and 37: 5/9 V oc [mV] 940 920 900 880 860 8
- Page 40: 9/9 Acknowledgements The co-workers
- Page 43 and 44: Seite 40 von 288 Introduction and f
- Page 45 and 46: Seite 42 von 288 Introduction / Pro
- Page 47 and 48: Seite 44 von 288 Results The amorph
- Page 49 and 50: Seite 46 von 288 Collaborations IMT
- Page 51 and 52: Seite 48 von 288 Introduction / Pro
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- Page 55 and 56: Seite 52 von 288 Towards low costs
- Page 58 and 59: Eidgenössisches Departement für U
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- Page 66 and 67: 3/6 Results Defects characterizatio
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- Page 73 and 74: Seite 70 von 288 Summary of Applied
- Page 75 and 76: Seite 72 von 288 Table 5 summarizes
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7/9<br />
Fig. 5: Top) SEM micrographs of ZnO surface. Bottom) Bright Field TEM cross-section micrographs<br />
of �c-Si:H pin on substrates treated with increasing plasma treatment time (Left 0 min // Middle 40 min<br />
// Right 80 min). For 40 min of treatment, the cracks do not cross completely through the p-i-n device<br />
(compare with sample t=0min), but only begin after the first third of i-layer<br />
a) b)<br />
Fig. 6: a) sketch of silicon growth on rough ZnO: cracks are located above the valleys between the<br />
substrate’s pyramids. b) corresponding equivalent electrical circuit for µc-Si:H solar cells<br />
Characterization tools and Laboratory infrastructure<br />
The effort undertaken in 2005 and 2006 to improve the laboratory infrastructure in terms of caracterization<br />
systems and processing tools has been continued.<br />
� An Hall effect setup has been upgraded with new electronics to allow faster and more accurate<br />
caracterization of the mobility in TCO's<br />
� A set-up was refurbished to allow a measurement of the TCO’s resistance as function of temperature<br />
(10-350°K)<br />
� Acquisition software and hardware for spectral response and IV curve measurement have been<br />
continuously improved<br />
� The new large area PECVD cluster system was taken into operation (Fig. 7). This system is<br />
equipped with two KAI M plasma boxes and is fully automated. All the hardware and software<br />
have been developed at IMT. The system is now used for the fabrication of layers and devices. It<br />
is user friendly and its automated mode makes it now a choice research tool for the next projects.<br />
Thin film silicon solar cells: advanced processing and characterization, C. Ballif, IMT Seite 35 von 288
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