Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE

Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE Programm Photovoltaik Ausgabe 2008 ... - Bundesamt für Energie BFE

29.09.2012 Views

5/9 Type of meas. Direct with c-Si ref cell Multiflash Direct with filtered c-Si ref cell MODULE Cell Type (P0-Pa)/Pa (%) (P3-Pa)/Pa (%) (P15-P3)/P3 (%) (P15-Pa)/Pa (%) Miitsubishi PV-MF130EA2LF mc-Si -2.2% -0.3% -0.6% -0.8% Suntech STP150-24 mc-Si -1.2% -0.6% -1.0% -1.6% Kyocera KC125GHT-2 mc-Si -1.6% -1.1% -1.1% -2.2% RWE ASE-165-GT-FT mc-Si -2.7% -2.7% -1.4% -4.1% Solarwatt MHHplus220 mc-Si -2.9% -4.1% -0.5% -4.6% IBC-215S Megaline mc-Si 0.6% 0.4% -0.7% -0.3% Solar World SW165 mc-Si -0.1% -0.4% -1.7% -2.1% BP Solar BP7180 sc-Si -1.6% -1.3% -1.3% -2.6% Sharp NT-175E1 sc-Si -1.0% -0.1% -1.5% -1.6% Sanyo HIP180NE1 HIT 0.3% -0.3% -2.0% -2.2% Sunpower STM210 F sc-Si 0.2% -1.0% -1.4% -2.3% First Solar FS-60 CdTe NaN -1.9% NaN Kaneka K60 a-Si -27.2% -8.7% -33.5% UniSolar ES-62T a-Si -11.1% -4.7% -15.3% Table 2: initial power degradation {(P0-Pa)/Pa}, first 3 and 15 months and last year degradation. abbrev. 3.2.5 Initial degradation Initial degradation in power {(P0-Pa)/Pa} of the c-Si modules (see Table 2) is on average – 1.1%, ranging from +0.6% to -2.9%. The values in the ± 1 % bracket are within the tolerance interval for measurement repeatability. The performance loss is mainly due to degradation of the short circuit current Isc. Considering the measurement precision, for degradations up to -5% a linear relation between power and Isc degradation can be observed. In the BP7180 module, however, initial degradation occurred mainly in voltage (dPm: -1.6%; dIsc: -0.8%; dVoc: -1.3%). Initial power degradation {(P3-Pa)/Pa} of the a-Si K60 module was -27.2%, while degradation in the ES-62T module was only -11.1%. (Table 2) 3.2.6 Power degradation after 1 year of exposure In the standard modules with c-Si cells, the average reduction after one year of exposure (from P3 to P15) in most cases was very low, ranging from -0.5% and -2.0%, and four of them are within the reproducibility error limits of the measurements using the flash sun simulator. 3.2.7 Annual energy performance For the evaluation of the energy output, our institute differentiates between two points of view. The first is more consumer oriented (3.2.8), as it looks at the energy output in relation to Pn and the second one (3.2.9) is a purely technological inter-comparison, where the real stabilized STC power is used as reference. For all figures the energy output in kWh/kWp refers to the best one of the test cycle. For reasons of simplicity the average of the two modules is shown here. The grey bars correspond to the respective difference between the two modules. To show the range of order of the kWh/kWp, uncertainty error bars were added in Figure 2 and Figure 3. In the case of name plate power as reference, the uncertainty is on the one hand due to the energy measurement itself (±1.0%) and on the other hand due to the uncertainty in power declarations (±tp%). Taking instead the real power as reference, the uncertainty is the sum of the energy measurement uncertainty (±1.0%) and the ISAAC-TISO power measurement accuracy (±2% for c-Si, not defined for all thin-film technologies - CdTe and a-Si). The ±1.0% of the outdoor measurement uncertainty includes the data acquisition accuracy, MPPT tracking efficiency, cable connections, differences in albedo and ventilation, and module alignment errors. All a-Si error bars are to be assessed with care due to the non availability of the exact error in indoor performance determination. The single junction a-Si technologies of K60 (ave. PR 0.88) shows a very strong initial degradation which is dominating respect to the seasonal variations. Being not totally concluded the initial degradation an inter-comparison with the other modules is almost impossible. 3.2.8 Annual energy performance comparison with Pn as reference Due to the above-mentioned reasons and the different degradations occurring during the first year of exposure, the kWh ranking with respect to nominal power Pn (Figure 2) leads to slightly different figures compared to the one referring to the measured power P3 (Figure 3). Centrale di test ISAAC-TISO, D. Chianese, ISAAC-TISO Seite 163 von 288 MF STP KC ASE MHH IBC SW BP NT HIP STM FS K ES

Seite 164 von 288 3.2.9 Annual energy performance comparison with P3 as reference In the pure technological intercomparison (stabilised power P3 as 12% -0.1% -1.9% -4.3% -4.5% -4.5% reference) the modules can be separated into 3 groups: Group {FS, MHH, 8% ES, HIP} with up to 3% of difference with respect to the best one, Group 4% {MF, KC, STM, IBC, ASE, NT} with a difference of between 3% and 6% and 0% Group {SW, STP, BP} with a difference from 6 to 10%. -4% Figure 2: Difference (average of 2 modules) in annual energy production [kWh/kWp], of 14 different module types compared to the best module, with nominal power Pn as reference and difference between the two modules of the same type. -8% -12% -16% -4.7% difference to best c-Si module (avg. of 2 modules) difference between 2 modules -5.7% -5.8% -6.8% -7.2% -7.5% -8.4% FS HIP MF KC IBC NT K STM STP SW MHH ES ASE BP The interpretation of the energy performance of amorphous silicon technologies, represented in blue in Figure 3, are complicated by the fact that the STC power of these technologies changes in time (degradation and recovery effects), and the measurement accuracy cannot be quantified. Consequentially their position in the ranking changes as well depending on the period under investigation. 12% 8% 4% 0% -4% -8% -12% -16% -1.1% -1.3% -1.8% -3.4% -3.9% -4.0% -4.4% -5.5% -5.5% -6.8% -6.8% -7.1% -8.0% difference to best c-Si module (avg. of 2 modules) difference between 2 modules FS MHH ES HIP MF KC STM IBC ASE NT SW STP BP K 3.3 Inter-comparison of measurement approaches -9.4% Figure 3: Difference (average of 2 modules) in annual energy production [kWh/kWp], of 14 different module types compared to the best module with real power P3 as reference and difference between the two modules of the same type. The power matrix of some selected modules was determined with all the methods described in [2] and then used to predict the annual energy. The requirement for this test was that the reference module and the module to be predicted have as close as possible STC parameters, so as to avoid any correction for this. Figure 4 shows representative results of a single module. Indoor -0.02% short term fixed (19may, ref cell) -0.10% short term fixed (20may, ref cell) -0.70% short term fixed (19/20 may, ref cell) -0.33% short term fixed (19may, pyran.) -4.18% short term tracking (23jun, pyran.) 8.70% short term tracking (23/24jun, ref cell) 2.96% short term tracking * (23/24jun, ref cell) 0.22% -7% -5% -3% -1% 1% 3% 5% 7% 9% 11% * NOST measured independently Error in annual energy prediction Centrale di test ISAAC-TISO, D. Chianese, ISAAC-TISO Figure 4: Error in annual energy prediction of a single c-Si module obtained from simulations with power matrices extracted from different days with 3 different measurement procedures and 2 different irradiance sensors. *separately measured NOST The inter-comparison with real data showed: (1) The ER procedure based on an indoor measured power matrix leads to the lowest error and most reproducible results, but the NOST value has to be therefore determined separately. (2) The minimum requirement for short term outdoor measurements (few days) is the use of a 6/9

5/9<br />

Type of<br />

meas.<br />

Direct with<br />

c-Si ref cell<br />

Multiflash<br />

Direct with<br />

filtered c-Si<br />

ref cell<br />

MODULE<br />

Cell Type<br />

(P0-Pa)/Pa<br />

(%)<br />

(P3-Pa)/Pa<br />

(%)<br />

(P15-P3)/P3<br />

(%)<br />

(P15-Pa)/Pa<br />

(%)<br />

Miitsubishi PV-MF130EA2LF mc-Si -2.2% -0.3% -0.6% -0.8%<br />

Suntech STP150-24 mc-Si -1.2% -0.6% -1.0% -1.6%<br />

Kyocera KC125GHT-2 mc-Si -1.6% -1.1% -1.1% -2.2%<br />

RWE ASE-165-GT-FT mc-Si -2.7% -2.7% -1.4% -4.1%<br />

Solarwatt MHHplus220 mc-Si -2.9% -4.1% -0.5% -4.6%<br />

IBC-215S Megaline mc-Si 0.6% 0.4% -0.7% -0.3%<br />

Solar World SW165 mc-Si -0.1% -0.4% -1.7% -2.1%<br />

BP Solar BP7180 sc-Si -1.6% -1.3% -1.3% -2.6%<br />

Sharp NT-175E1 sc-Si -1.0% -0.1% -1.5% -1.6%<br />

Sanyo HIP180NE1 HIT 0.3% -0.3% -2.0% -2.2%<br />

Sunpower STM210 F sc-Si 0.2% -1.0% -1.4% -2.3%<br />

First Solar FS-60 CdTe NaN -1.9% NaN<br />

Kaneka K60 a-Si -27.2% -8.7% -33.5%<br />

UniSolar ES-62T a-Si -11.1% -4.7% -15.3%<br />

Table 2: initial power degradation {(P0-Pa)/Pa}, first 3 and 15 months and last year degradation.<br />

abbrev.<br />

3.2.5 Initial degradation<br />

Initial degradation in power {(P0-Pa)/Pa} of the c-Si modules (see Table 2) is on average – 1.1%,<br />

ranging from +0.6% to -2.9%. The values in the ± 1 % bracket are within the tolerance interval for<br />

measurement repeatability.<br />

The performance loss is mainly due to degradation of the short circuit current Isc. Considering the<br />

measurement precision, for degradations up to -5% a linear relation between power and Isc degradation<br />

can be observed. In the BP7180 module, however, initial degradation occurred mainly in voltage<br />

(dPm: -1.6%; dIsc: -0.8%; dVoc: -1.3%).<br />

Initial power degradation {(P3-Pa)/Pa} of the a-Si K60 module was -27.2%, while degradation in the<br />

ES-62T module was only -11.1%. (Table 2)<br />

3.2.6 Power degradation after 1 year of exposure<br />

In the standard modules with c-Si cells, the average reduction after one year of exposure (from P3 to<br />

P15) in most cases was very low, ranging from -0.5% and -2.0%, and four of them are within the reproducibility<br />

error limits of the measurements using the flash sun simulator.<br />

3.2.7 Annual energy performance<br />

For the evaluation of the energy output, our institute differentiates between two points of view. The first<br />

is more consumer oriented (3.2.8), as it looks at the energy output in relation to Pn and the second<br />

one (3.2.9) is a purely technological inter-comparison, where the real stabilized STC power is used as<br />

reference.<br />

For all figures the energy output in kWh/kWp refers to the best one of the test cycle. For reasons of<br />

simplicity the average of the two modules is shown here. The grey bars correspond to the respective<br />

difference between the two modules. To show the range of order of the kWh/kWp, uncertainty error<br />

bars were added in Figure 2 and Figure 3. In the case of name plate power as reference, the uncertainty<br />

is on the one hand due to the energy measurement itself (±1.0%) and on the other hand due to<br />

the uncertainty in power declarations (±tp%). Taking instead the real power as reference, the uncertainty<br />

is the sum of the energy measurement uncertainty (±1.0%) and the ISAAC-TISO power measurement<br />

accuracy (±2% for c-Si, not defined for all thin-film technologies - CdTe and a-Si). The ±1.0%<br />

of the outdoor measurement uncertainty includes the data acquisition accuracy, MPPT tracking efficiency,<br />

cable connections, differences in albedo and ventilation, and module alignment errors. All a-Si<br />

error bars are to be assessed with care due to the non availability of the exact error in indoor performance<br />

determination.<br />

The single junction a-Si technologies of K60 (ave. PR 0.88) shows a very strong initial degradation<br />

which is dominating respect to the seasonal variations. Being not totally concluded the initial degradation<br />

an inter-comparison with the other modules is almost impossible.<br />

3.2.8 Annual energy performance comparison with Pn as reference<br />

Due to the above-mentioned reasons and the different degradations occurring during the first year of<br />

exposure, the kWh ranking with respect to nominal power Pn (Figure 2) leads to slightly different figures<br />

compared to the one referring to the measured power P3 (Figure 3).<br />

Centrale di test ISAAC-TISO, D. Chianese, ISAAC-TISO Seite 163 von 288<br />

MF<br />

STP<br />

KC<br />

ASE<br />

MHH<br />

IBC<br />

SW<br />

BP<br />

NT<br />

HIP<br />

STM<br />

FS<br />

K<br />

ES

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