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Discrete Devices
Power Device Serie s
Power Transistors
Bipolar transistors that feature high breakdown voltages, high switching speeds, and high
reliability due to fabrication in SANYO's MBIT process.
Power Bipolar Transistors
Type No.
2SC5956
2SC5957
2SC5958
2SC5959
2SC5961
2SC5962
2SC5963
Package
TO-220
TO-220ML
TO-3PB
TO-3PMLH
VCB0 (V)
VCE0 (V)
IC (A)
PC (W)
hFE VCE IC (V) (A)
min
to
max
VCE (sat)
IC IB (A) (A)
7 40
0.8
4 0.8
10 50
1.2
6 1.2
500 400
4
7
25
5
0.5
0.8 20 to 50
3
4
0.6
0.8
10 80
1.2
6 1.2
14 90
2.0
10 2.0
10 50
1.2
6 1.2
Power Schottky Barrier Diodes
Schottky barrier diodes with low reverse current due to the adoption of a high-reliability
planar structure. These devices also feature low switching noise.
Power Schottky Barrier Diodes
Type No.
SBT250-04Y
SBT80-06J
SBT350-06L
SBT150-10Y
SBT350-10R
Package
SMP
TO-220ML
TO-3PB
SMB
TO-3PML
VPRM (V)
40
60
100
Power MOSFETs
IO
(A)
25
8
35
15
35
I FSM
(A)
120
80
200
80
160
Low on-resistance, ultrahigh switching speed, and low Qg.
Low On Resistance PowerMOSFET
Type No. Package VDSS (V) VGSS (V) ID (A)
PD(W)
TC=25°C
RDS (on)(Ω)typ/max
VGS =10V VGS =4V
Ciss(typ)
(pF)
Polarity
2SJ653 TO-220ML 60 ±20 37 35 19/25 26/37 6500 Pch
2SK3818 SMP
60 ±20 74 75 10/13 13/18 5500 Nch
2SJ657 TO-220ML 100 ±20 25 30 39/52 49/69 6350 Pch
2SK3822 SMP
100 ±20 52 75 20/26 24/34 6250 Nch
2SJ571 ZP
400 ±30 5 50 1.5/2(Ω) –
1500 Pch
2SJ522 SMP
450 ±30 5 70 1.5/2(Ω) –
1500 Pch
2SK2619 SMP
500 ±30 6 70 *0.95/1.25 –
700 Nch
2SK2628LS TO-220FI 600 ±30 6 35 *0.9/1.2(Ω) –
1050 Nch
2SK2919 ZP
600 ±30 2 35 *3.2/4.3(Ω)
*VGS=15
–
400 Nch
I F
(A)
10
3
15
6
14
VF max
(V)
0.55
0.58
0.80
V R
(V)
20
30
50
max
(V)
0.8
I R
max
(mA)
0.3
0.1
0.5
0.2
0.5
f T
typ
(MHz)
15
20
15
Rthj-c
(°C/W)
1.7
5
1.2
3
2
ExPD: Excellent Power Device
RCC Method Power Supply Switching Regulator IC
Built-in delayed RCC control circuit IC
Overcurrent protection function
Miniature package (TO-220F15H)
Delay-RCC Type ExPD
Type No.
TN4R01
TN4R02
TN4R03
TN4R04
TN6R04
TN8R01
TN8R02
TN8R03
TN8R04
VIN
(AC)
Package
Half-Bridge Driver
TO-220FI5H
VDSS (V)
450
450
450
450
650
800
800
800
800
Power MOSFET
ID (A) RDS (on)(Ω)
4.5
6
3
6.5
5.5
2.5
3
4.5
3.5
Type No. Withstand voltage VHFG (V)
TND505MD
TND506MD
Start-up Resistor
Pin Definitions
1 : FB
2 : DELAY
3 : DRAIN
4 : VIN
5 : SOURCE
(GND)
+
TN4R / TN6R /TN8R Series
5
4
3
2
1
Resonant
Capacitor
Timing Capacitor
Snubber
Circuit
Drive
Circuit
Input
Compensation Resistor
Feedback Control Capacitor
1.25/1.6
0.95/1.3
1.95/2.5
0.8/1.04
1.2/1.6
3.9/5.2
3.1/3.9
1.75/2.3
2.45/3.2
Error Detection
Imput Voltage
(VAC)
100/120
100/120
100/120
100/120
220
WIDE
220
WIDE
220
WIDE
220
WIDE
220
WIDE
VOUT
GND
Max Power
(W)
90
120
60
130
180
90
100
50
120
60
160
80
140
70
Drive capacity Source / Sink (mA)
600 220/450
+
Power Devices
SANYO's ExPD products achieve both high reliability and high performance at the same
time. The high-precision overcurrent protection function that these devices feature
allows them to be used in a wide variety of applications as switching devices for solenoid
and motor drivers in OA and FA equipment and entertainment (game) products.
Half-Bridge Driver
High breakdown voltage MOSFET with
current detection function
Excessive input voltage protection function
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