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Damage formation and annealing studies of low energy ion implants ...

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similar to the width <strong>of</strong> the error funct<strong>ion</strong>, then the resulting convoluted peak will have a<br />

FWHM that will be subject to some broadening, as shown in Figure 4.9c). If the slope<br />

<strong>of</strong> an interface is broad compared to the limits imposed due to the convoluting Gaussian,<br />

then the resulting convoluted spectra will closely fol<strong>low</strong> the shape <strong>of</strong> the interface, as<br />

shown for the interface at <strong>low</strong> <strong>energy</strong> in Figure 4.9d).<br />

Yield (%)<br />

100<br />

80<br />

60<br />

40<br />

20<br />

0<br />

100<br />

80<br />

60<br />

40<br />

20<br />

0<br />

a) b)<br />

c)<br />

Energy<br />

4.2.2 Experimental<br />

4.2.2.1 MEIS system<br />

A diagram <strong>of</strong> the Daresbury MEIS facility (3) is shown in Figure 4.10 <strong>and</strong> the<br />

system is also described in (43). The <strong>ion</strong> source platform houses a duoplasmatron <strong>ion</strong><br />

source. He + or H + <strong>ion</strong>s are accelerated with an <strong>energy</strong> <strong>of</strong> 20 keV from the source <strong>and</strong><br />

then the <strong>ion</strong>s are then accelerated again to the required <strong>energy</strong> with a second power<br />

supply. Originally a 500 kV power supply was used but this was replaced with a 250 kV<br />

supply, with better voltage stability <strong>and</strong> which could be set with more accuracy.<br />

78<br />

d)<br />

Ideal<br />

Convoluted<br />

Figure 4.9 The effect <strong>of</strong> convoluting different ideal peak shapes with a single Gaussian<br />

funct<strong>ion</strong>. a) A layer that is wide compared to the width <strong>of</strong> the Gaussian. b) A very thin<br />

layer. c) A layer with a width similar to the Gaussian. d) An interface with a broad<br />

<strong>energy</strong> distribut<strong>ion</strong>.

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