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Damage formation and annealing studies of low energy ion implants ...

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Figure 4.7 a) Plot <strong>of</strong> a Gaussian distribut<strong>ion</strong> b) The<br />

error funct<strong>ion</strong> in MEIS spectra is typically <strong>of</strong> the form<br />

<strong>of</strong> the integral <strong>of</strong> the Gaussian distribut<strong>ion</strong>. The<br />

st<strong>and</strong>ard deviat<strong>ion</strong> is indicated. From (4).<br />

The second effect referred to earlier is the system resolut<strong>ion</strong>. Many parts <strong>of</strong> the<br />

system are subject to statistical fluctuat<strong>ion</strong>s <strong>of</strong> some kind. It is convenient to lump<br />

together the fluctuat<strong>ion</strong>s from the major experimental causes. This is close to a<br />

Gaussian distribut<strong>ion</strong> <strong>and</strong> can be characterised by the st<strong>and</strong>ard deviat<strong>ion</strong> Ωr, commonly<br />

referred to as the system resolut<strong>ion</strong>. The main contribut<strong>ion</strong> to the system resolut<strong>ion</strong> is<br />

the <strong>energy</strong> resolut<strong>ion</strong> <strong>of</strong> the detector. At the Daresbury facility ∆E/E is ~ 0.35%. Other<br />

contribut<strong>ion</strong>s to the system resolut<strong>ion</strong> include the <strong>energy</strong> spread in the analysing beam,<br />

the acceptance angle <strong>of</strong> the detector <strong>and</strong> the width <strong>of</strong> the beam. The <strong>energy</strong> resolut<strong>ion</strong> is<br />

the most significant contributor.<br />

In the same way as the depth scale is calculated, the depth resolut<strong>ion</strong> can be<br />

calculated by applying the <strong>energy</strong> error <strong>of</strong> the analyser. The resolut<strong>ion</strong> is dependent on<br />

the scattering configurat<strong>ion</strong> but a depth resolut<strong>ion</strong> <strong>of</strong> 0.6 nm is typical (17). To improve<br />

the overall depth resolut<strong>ion</strong>, scattering configurat<strong>ion</strong>s that result in long pathways<br />

through the sample are used. Using a beam <strong>energy</strong> where the rate <strong>of</strong> <strong>energy</strong> loss is high<br />

also improves the resolut<strong>ion</strong>. This means that better resolut<strong>ion</strong> is achieved with He<br />

compared to H. The absolute error <strong>of</strong> the detector is reduced using <strong>low</strong>er beam energies,<br />

<strong>and</strong> hence <strong>low</strong>er beam energies can improve the resolut<strong>ion</strong>.<br />

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