Damage formation and annealing studies of low energy ion implants ...
Damage formation and annealing studies of low energy ion implants ... Damage formation and annealing studies of low energy ion implants ...
4.2.1.7 Energy straggling and system resolution, resulting in a convolution of the peaks with Gaussian distributions MEIS energy spectra are modified from idealised profiles by two unavoidable effects, i.e. energy straggling and the system resolution, causing the idealised profiles to become convoluted with error functions. As an energetic particle moves through a sample it loses energy through many individual encounters. These encounters are subject to statistical fluctuations. Two ions with an identical initial energy are unlikely to have the same energy after passing through the same thickness of a sample. This effect is called energy straggling, (Ωs), and this places a finite limit on the accuracy of the energy losses and hence the depths that can be resolved. It is difficult to calculate the exact amount of straggling, but a theoretical expression that estimates the amount of energy straggling was derived by Bohr and extended by Lindhard and Scharff: 2 B 2 2 ( z e ) Nz t Ω = (4.10) 4π 1 2 where N is the density and t is the layer thickness. This indicates that the energy straggling is proportional to the square root of the layer thickness. Energy straggling also varies with atomic species and the electron density but not the beam energy (4). Theory predicts that the straggling produces approximately a Gaussian distribution from a mono energetic incident beam. Backscattering spectra most often display the integral of the Gaussian distribution (error function) rather than the Gaussian distribution as shown in Figure 4.7 b) and a) respectively. The full width half maximum (FWHM) of a Gaussian corresponds to the 12% to 88% range of the error function and the ±Ω corresponds to the 16% to 84% range. The FWHM is equal to 2.355 times Ω (4). 75
Figure 4.7 a) Plot of a Gaussian distribution b) The error function in MEIS spectra is typically of the form of the integral of the Gaussian distribution. The standard deviation is indicated. From (4). The second effect referred to earlier is the system resolution. Many parts of the system are subject to statistical fluctuations of some kind. It is convenient to lump together the fluctuations from the major experimental causes. This is close to a Gaussian distribution and can be characterised by the standard deviation Ωr, commonly referred to as the system resolution. The main contribution to the system resolution is the energy resolution of the detector. At the Daresbury facility ∆E/E is ~ 0.35%. Other contributions to the system resolution include the energy spread in the analysing beam, the acceptance angle of the detector and the width of the beam. The energy resolution is the most significant contributor. In the same way as the depth scale is calculated, the depth resolution can be calculated by applying the energy error of the analyser. The resolution is dependent on the scattering configuration but a depth resolution of 0.6 nm is typical (17). To improve the overall depth resolution, scattering configurations that result in long pathways through the sample are used. Using a beam energy where the rate of energy loss is high also improves the resolution. This means that better resolution is achieved with He compared to H. The absolute error of the detector is reduced using lower beam energies, and hence lower beam energies can improve the resolution. 76
- Page 43 and 44: dE/dx (ev/Ang) 10 1 Inelastic Energ
- Page 45 and 46: dE/dx (eV/Ang) 125 100 75 50 25 0 2
- Page 47 and 48: Figure 2.5 Results of TRIM simulati
- Page 49 and 50: Chapter 3 Damage and Annealing proc
- Page 51 and 52: the Si/SiO2 interface, consuming th
- Page 53 and 54: On the basis that by creating an in
- Page 55 and 56: Figure 3.4 Structure of crystalline
- Page 57 and 58: a Si atom will suffer little angula
- Page 59 and 60: 3.2.2.5 Homogeneous model (Critical
- Page 61 and 62: Sputtering and atomic mixing play a
- Page 63 and 64: and is approximately 25 times faste
- Page 65 and 66: elevant dopants later. For equal co
- Page 67 and 68: nearest neighbour distance (52). By
- Page 69 and 70: Category I defects are produced whe
- Page 71 and 72: thermal annealing (600 - 700 °C an
- Page 73 and 74: Figure 3.11 Relationship between im
- Page 75 and 76: defect pairs due to Coulomb attract
- Page 77 and 78: ⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
- Page 79 and 80: 27 R.D. Goldberg, J. S. Williams, a
- Page 81 and 82: 67 H. Bracht. Diffusion Mechanism a
- Page 83 and 84: Hall effect measurements were carri
- Page 85 and 86: energy than one scattered from an a
- Page 87 and 88: epresents a small improvement over
- Page 89 and 90: (dE/dx)out multiplied by the path l
- Page 91 and 92: they are small compared to the diff
- Page 93: ackscattering (27). This fact forms
- Page 97 and 98: similar to the width of the error f
- Page 99 and 100: UP Ion Beam SPIN Rotation Sample Sc
- Page 101 and 102: Kinematic factor (K) 1.0 0.8 0.6 0.
- Page 103 and 104: Figure 4.14 Illustration of the dou
- Page 105 and 106: 4.2.2.4 Interpretation of spectra A
- Page 107 and 108: with are comparatively small, ~ 0.5
- Page 109 and 110: Inelastic energy loss (eV/Ang) 32 2
- Page 111 and 112: iterative procedure is carried out
- Page 113 and 114: Yield (couts per 5µC) 300 250 200
- Page 115 and 116: SIMS experiments were also carried
- Page 117 and 118: MEIS, using the scattering conditio
- Page 119 and 120: 4.5 Sample production Samples have
- Page 121 and 122: an N2/O2 environment to maintain an
- Page 123 and 124: 38 M. Anderle, M. Barozzi, M. Bersa
- Page 125 and 126: damage evolution behaviour observed
- Page 127 and 128: Yield (counts per 5 µC) 250 200 15
- Page 129 and 130: essentially a “zero dose” profi
- Page 131 and 132: no longer “visible” in MEIS has
- Page 133 and 134: yield (cts / 5µC) 500 400 300 200
- Page 135 and 136: 5.4 Conclusion MEIS analysis with a
- Page 137 and 138: Chapter 6 Annealing studies 6.1 Int
- Page 139 and 140: 6.2.2.2 Results and Discussion Figu
- Page 141 and 142: theory predictions and X-ray fluore
- Page 143 and 144: implantation conditions are those u
4.2.1.7 Energy straggling <strong>and</strong> system resolut<strong>ion</strong>, resulting in a convolut<strong>ion</strong> <strong>of</strong> the<br />
peaks with Gaussian distribut<strong>ion</strong>s<br />
MEIS <strong>energy</strong> spectra are modified from idealised pr<strong>of</strong>iles by two unavoidable<br />
effects, i.e. <strong>energy</strong> straggling <strong>and</strong> the system resolut<strong>ion</strong>, causing the idealised pr<strong>of</strong>iles to<br />
become convoluted with error funct<strong>ion</strong>s.<br />
As an energetic particle moves through a sample it loses <strong>energy</strong> through many<br />
individual encounters. These encounters are subject to statistical fluctuat<strong>ion</strong>s. Two <strong>ion</strong>s<br />
with an identical initial <strong>energy</strong> are unlikely to have the same <strong>energy</strong> after passing<br />
through the same thickness <strong>of</strong> a sample. This effect is called <strong>energy</strong> straggling, (Ωs), <strong>and</strong><br />
this places a finite limit on the accuracy <strong>of</strong> the <strong>energy</strong> losses <strong>and</strong> hence the depths that<br />
can be resolved.<br />
It is difficult to calculate the exact amount <strong>of</strong> straggling, but a theoretical<br />
express<strong>ion</strong> that estimates the amount <strong>of</strong> <strong>energy</strong> straggling was derived by Bohr <strong>and</strong><br />
extended by Lindhard <strong>and</strong> Scharff:<br />
2<br />
B<br />
2 2<br />
( z e ) Nz t<br />
Ω =<br />
(4.10)<br />
4π 1<br />
2<br />
where N is the density <strong>and</strong> t is the layer thickness. This indicates that the <strong>energy</strong><br />
straggling is proport<strong>ion</strong>al to the square root <strong>of</strong> the layer thickness. Energy straggling<br />
also varies with atomic species <strong>and</strong> the electron density but not the beam <strong>energy</strong> (4).<br />
Theory predicts that the straggling produces approximately a Gaussian distribut<strong>ion</strong> from<br />
a mono energetic incident beam. Backscattering spectra most <strong>of</strong>ten display the integral<br />
<strong>of</strong> the Gaussian distribut<strong>ion</strong> (error funct<strong>ion</strong>) rather than the Gaussian distribut<strong>ion</strong> as<br />
shown in Figure 4.7 b) <strong>and</strong> a) respectively. The full width half maximum (FWHM) <strong>of</strong> a<br />
Gaussian corresponds to the 12% to 88% range <strong>of</strong> the error funct<strong>ion</strong> <strong>and</strong> the ±Ω<br />
corresponds to the 16% to 84% range. The FWHM is equal to 2.355 times Ω (4).<br />
75